公开(公告)号：US20190255561A1

公开(公告)日：2019-08-22

申请号：US16266310

申请日：2019-02-04

Applicant: Tokyo Electron Limited

Inventor： Satoshi SHIMMURA ,  Yuji SAKAI ,  Kousuke YOSHIHARA

IPC: B05C21/00 ,  B05C5/02 ,  B08B9/08

Abstract: A solution treatment apparatus includes: a substrate holding unit holds and rotates a substrate; a coating solution supply unit applies a coating solution to the substrate held by the substrate holding unit; a cup unit arranged outside the substrate holding unit in a manner to be able to surround the substrate held by the substrate holding unit; an exhaust path provided between the substrate holding unit and an inner peripheral surface of the cup unit; a coating solution collection unit provided above the exhaust path in a manner to cover the exhaust path and including an opening part communicating in a vertical direction; a solvent supply unit supplies a solvent for the coating solution to the coating solution collection unit; and a relay unit located above the coating solution collection unit and projecting from the inner peripheral surface of the cup unit toward the coating solution collection unit.

公开(公告)号：US20180074407A1

公开(公告)日：2018-03-15

申请号：US15816088

申请日：2017-11-17

Applicant: Tokyo Electron Limited

Inventor： Kousuke YOSHIHARA ,  Koji TAKAYANAGI ,  Toshinobu FURUSHO ,  Takashi SASA ,  Daisuke ISHIMARU

IPC: G03F7/16 ,  H01L21/67

CPC classification number: G03F7/16 ,  H01L21/67017

Abstract: A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.

公开(公告)号：US20160070171A1

公开(公告)日：2016-03-10

申请号：US14845827

申请日：2015-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TERASHITA ,  Hirofumi TAKEGUCHI ,  Takeshi SHIMOAOKI ,  Kousuke YOSHIHARA ,  Tomohiro ISEKI

IPC: G03F7/16

CPC classification number: G03F7/3021 ,  H01L21/6715

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract translation: 显影方法包括：通过第一显影剂喷嘴在由基板保持单元保持的基板的表面上形成显影剂的水坑; 随后将显影剂从中央或周边部分排出到第一显影剂喷嘴的周边或中心部分的第一显影剂喷嘴与第一显影剂喷嘴的接触部分接触 水坑 将显影剂从第二显影剂喷嘴供应到旋转基板上，从而在基板平面中均匀化通过显影剂扩展步骤的显影进展程度的分布; 并且在显影剂扩散步骤和显影剂供应步骤之间移除显影剂以除去基板上的显影剂。

公开(公告)号：US20150004311A1

公开(公告)日：2015-01-01

申请号：US14308784

申请日：2014-06-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsunori ICHINO ,  Kousuke YOSHIHARA ,  Yuichi TERASHITA

IPC: B05C11/08 ,  B05D1/00

CPC classification number: H01L21/6715 ,  B05C11/08 ,  B05D1/005 ,  G03F7/162

Abstract: A coating film forming apparatus includes: a substrate holding unit to horizontally hold a substrate; a rotating mechanism to rotate the substrate held by the substrate holding unit; a coating liquid supplying mechanism to supply coating liquid to form a coating film on the substrate; an annular member to rectify a gas stream above a periphery of the substrate when liquid film of the coating liquid is dried by rotation of the substrate, the annular member being provided above the periphery of the substrate and along a circumferential direction of the substrate so as to cover the periphery of the substrate; and a protrusion provided on an inner periphery of the annular member along circumferential direction of the annular member so as to protrude upward to reduce component of the gas stream flowing directly downward near an inner peripheral edge of the annular member.

Abstract translation: 涂膜形成装置包括：水平保持基板的基板保持单元; 旋转机构，旋转由所述基板保持单元保持的所述基板; 涂布液供给机构，在基板上供给涂布液，形成涂膜; 环状构件，用于在涂布液的液体膜通过旋转基板而被干燥时对基板的周边的气体进行整流，环形构件设置在基板的周围的上方，并且沿着基板的圆周方向，以便 以覆盖基板的周边; 以及沿所述环状构件的周向设置在所述环状构件的内周上的突起，以向上突出，以减少在所述环形构件的内周边缘附近直接向下流动的气流的分量。

公开(公告)号：US20140174475A1

公开(公告)日：2014-06-26

申请号：US14101669

申请日：2013-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji TAKAYANAGI ,  Yukie MINEKAWA ,  Yuichi YOSHIDA ,  Kousuke YOSHIHARA ,  Yuichi TERASHITA ,  Toshinobu FURUSHO ,  Takashi SASA

IPC: H01L21/67

Abstract: A filtration efficiency, which is similar to the filtration efficiency obtained when a plurality of filters are provided, can be obtained by one filter, and decrease in throughput can be prevented. Based on a control signal from a control unit 101, a resist liquid L is sucked into a pump 70 through a filter. A part of the resist liquid sucked in the pump is discharged from a discharge nozzle 7. The remaining resist liquid is returned to a supply conduit 51b on a primary side of the filter. A process is synthesized by adding a replenishment amount equal to the discharge amount to the return amount. The discharge of the synthesized process liquid and the filtration thereof by the filter are performed the number of times corresponding to a rate between the discharge amount and the return amount.

Abstract translation: 通过一个过滤器可以获得与提供多个过滤器时获得的过滤效率相似的过滤效率，并且可以防止生产量的降低。 基于来自控制单元101的控制信号，抗蚀剂液体L通过过滤器被吸入泵70。 吸入泵中的抗蚀剂液体的一部分从排出喷嘴7排出。剩余的抗蚀剂液体返回到过滤器的一次侧的供给管51b。 通过将等于排出量的补充量加到返回量来合成过程。 进行合成处理液的排出以及过滤器的过滤，进行与排出量与返回量之间的比例对应的次数。

公开(公告)号：US20130194557A1

公开(公告)日：2013-08-01

申请号：US13760399

申请日：2013-02-06

Applicant: Tokyo Electron Limited

Inventor： Taro YAMAMOTO ,  Kousuke YOSHIHARA ,  Yuichi YOSHIDA

IPC: H01L21/027

CPC classification number: H01L21/027 ,  G03F7/3021 ,  H01L21/67051 ,  H01L21/6715

Abstract: A method of developing a substrate including rotating the substrate and supplying a developing liquid from a discharge port of a developer nozzle onto the surface of the substrate, while moving the developer nozzle, disposed above the substrate, from a central portion towards a peripheral portion of the substrate, and supplying a first rinse liquid from a discharge port of a first rinse nozzle onto the surface of the substrate, while moving the first rinse nozzle, disposed above the substrate, from the central portion towards the peripheral portion of the substrate. The supplying of the developing liquid and the first rinse liquid are performed concurrently, with the first rinse nozzle being maintained nearer to a center of the substrate than the developer nozzle.

Abstract translation: 一种显影衬底的方法，包括使衬底旋转并将显影液从显影剂喷嘴的排出口供应到衬底的表面上，同时将位于衬底上方的显影剂喷嘴从中心部分朝向衬底的周边部分移动 并且将第一冲洗液从第一冲洗喷嘴的排出口提供到基板的表面上，同时将设置在基板上方的第一冲洗喷嘴从中心部分朝向基板的周边部分移动。 同时进行显影液和第一漂洗液的供给，第一冲洗喷嘴比显影剂喷嘴更靠近基板的中心。

公开(公告)号：US20180361428A1

公开(公告)日：2018-12-20

申请号：US15997788

申请日：2018-06-05

Applicant: Tokyo Electron Limited

Inventor： Kentaro YOSHIHARA ,  Yuichi YOSHIDA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA

IPC: B05D3/10 ,  B05D3/06 ,  B05D1/00 ,  B05C5/00

Abstract: A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

公开(公告)号：US20170296944A1

公开(公告)日：2017-10-19

申请号：US15639010

申请日：2017-06-30

Applicant: Tokyo Electron Limited

Inventor： Kousuke YOSHIHARA ,  Katsunori ICHINO ,  Toshinobu FURUSHO ,  Takashi SASA ,  Katsuhiro TSUCHIYA ,  Yuichi TERASHITA ,  Hirofumi TAKEGUCHI

IPC: B01D19/00 ,  G03F7/16 ,  H01L21/67 ,  G03F7/30

CPC classification number: B01D19/0063 ,  B01D19/0031 ,  B01D19/0068 ,  G03F7/16 ,  G03F7/30 ,  H01L21/6715

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

公开(公告)号：US20170256427A1

公开(公告)日：2017-09-07

申请号：US15598358

申请日：2017-05-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi OOKOUCHI ,  Kousuke YOSHIHARA ,  Hiroshi ICHINOMIYA ,  Hirosi NISIHATA ,  Ryouichirou NAITOU

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

公开(公告)号：US20160327869A1

公开(公告)日：2016-11-10

申请号：US15109917

申请日：2015-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Yuichi TERASHITA ,  Hironori MIZOGUCHI

IPC: G03F7/20

CPC classification number: G03F7/7055 ,  G03F7/2022 ,  G03F7/70558

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract translation: 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。