公开(公告)号：US20150170882A1

公开(公告)日：2015-06-18

申请号：US14565612

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32541 ,  H01J37/32568

Abstract: Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

Abstract translation: 公开了一种等离子体处理装置，其包括：室，被配置为通过等离子体对晶片进行处理; VF电源，被配置为改变要供给到所述室中的高频功率的频率;基座，被配置为将晶片安装在其上; 以及设置成围绕晶片的聚焦环。 从VF电源开始通过等离子体的第一路径通过基座，晶片和等离子体，并且从VF电源开始通过等离子体的第二路径通过基座， 聚焦环和等离子体。 第一路径的反射最小频率不同于第二路径的反射最小频率，并且由VF电源可变的频率范围包括第一和第二路线的反射最小频率。

公开(公告)号：US20230307215A1

公开(公告)日：2023-09-28

申请号：US18022921

申请日：2021-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Yasushi MORITA

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/505

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32082 ,  H01J37/32577 ,  H01J37/32541 ,  C23C16/52 ,  C23C16/505 ,  H01J2237/24564 ,  H01J2237/332 ,  H01J2237/182

Abstract: There is provided a plasma processing apparatus comprising: a chamber; a gas supply configured to supply a gas into the chamber; an exhaust device configured to exhaust a gas in the chamber; a substrate support including a lower electrode and provided in the chamber; an upper electrode provided above the substrate support; a high-frequency power supply configured to supply high-frequency power to the upper electrode; an impedance circuit connected between the lower electrode and ground; and a controller configured to control the gas supply and the exhaust device such that a pressure of the gas in the chamber is 26.66 Pa or higher. A frequency of the high-frequency power is lower than 13.56 MHz, and an impedance of the impedance circuit is set such that an impedance of an electrical path from the lower electrode through the impedance circuit to the ground is higher than an impedance of an electrical path from a wall of the chamber to the ground.

公开(公告)号：US20170256382A1

公开(公告)日：2017-09-07

申请号：US15449675

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20160126065A1

公开(公告)日：2016-05-05

申请号：US14934091

申请日：2015-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32183

Abstract: A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite endse and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.

Abstract translation: 等离子体处理装置包括用于通过电感耦合将处理气体转换为等离子体的等离子体产生单元。 等离子体产生单元包括：第一高频天线，其由具有开放的相对端的涡旋线圈形成，并且在开放端之间的线的中心部分处是高频功率的供电点和通过电容器接地的接地点; 由设置在第一高频天线的第一和第二高频天线元件之间的平面涡流线圈形成的第二高频天线; 以及阻抗调整单元，用于调节从高频电源向第一高频天线观看的电路的谐振频率，该第一高频天线被配置为具有取决于阻抗调节单元的调整的两个谐振频率，当高频功率的频率 改变了

公开(公告)号：US20140056328A1

公开(公告)日：2014-02-27

申请号：US14070714

申请日：2013-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun ABE ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01K11/00

CPC classification number: G01K11/00 ,  G01K11/125

Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

Abstract translation: 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。

公开(公告)号：US20130308681A1

公开(公告)日：2013-11-21

申请号：US13954021

申请日：2013-07-30

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01K11/14

CPC classification number: G01K11/14 ,  G01K5/48 ,  H01L21/67248

Abstract: A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.

Abstract translation: 在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度 ，等等。 在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分 表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

公开(公告)号：US20130299455A1

公开(公告)日：2013-11-14

申请号：US13942106

申请日：2013-07-15

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Masashi SAITO

IPC: H05H1/24

CPC classification number: H05H1/24 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/334

Abstract: There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

Abstract translation: 提供了一种加热聚焦环和等离子体蚀刻装置的方法，其能够简化没有虚设基板的加热机构的结构。 等离子体蚀刻装置包括真空处理室; 用作安装基板的安装台的下电极; 设置成面向下电极的上电极; 用于提供处理气体的气体供应单元; 用于向下电极提供高频电力以产生处理气体的等离子体的高频电源; 以及设置在下电极上以围绕基板的周边的聚焦环。 在等离子体蚀刻装置中，通过从设置在真空处理室外侧的光源照射加热光来对聚焦环进行加热。

公开(公告)号：US20130122714A1

公开(公告)日：2013-05-16

申请号：US13737313

申请日：2013-01-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Shinji HIMORI ,  Noriaki IMAI ,  Takeshi OHSE ,  Jun ABE ,  Takayuki KATSUNUMA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

公开(公告)号：US20240331977A1

公开(公告)日：2024-10-03

申请号：US18671410

申请日：2024-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Satoru KAWAKAMI ,  Tsuyoshi MORIYA ,  Tatsuo MATSUDO ,  Jun YAMAWAKU ,  Hiroyuki ONODA

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.

公开(公告)号：US20230411118A1

公开(公告)日：2023-12-21

申请号：US18036106

申请日：2021-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32568 ,  H01J37/32816 ,  H01J37/32449 ,  H01J2237/332

Abstract: A plasma treatment device according to the present disclosure comprises a chamber, a gas supply part, a substrate support part, a ground electrode, an upper electrode, first and second high frequency power sources, and a rectifier. The gas supply part supplies a gas into the chamber. The substrate support part is provided inside the chamber. The ground electrode is provided inside the chamber. The upper electrode is provided above the substrate support part and the ground electrode. The first high frequency power source is electrically connected to the upper electrode in order to generate plasma in the chamber from the gas. The second high frequency power source is electrically connected to the upper electrode. The rectifier blocks the application of a negative voltage to the upper electrode by the second high frequency power source.