公开(公告)号：US20240367266A1

公开(公告)日：2024-11-07

申请号：US18775234

申请日：2024-07-17

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Hirotoshi MORI

IPC: B23K26/53 ,  B23K26/062 ,  H01L21/304 ,  H01L21/67

Abstract: A processing apparatus includes a controller configured to control an operation of forming condensing points in a processing target object. In forming the condensing points by radiating a laser light to an inside of the processing target object periodically from a modifying device while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and, also, by moving the modifying device in a diametrical direction relative to the holder by a moving mechanism, the controller controls a number and an arrangement of the condensing points, which are simultaneously formed at different positions in a plane direction of the processing target object, based on a relative rotation number of the processing target object and a radiation pitch of the laser light.

公开(公告)号：US20240250064A1

公开(公告)日：2024-07-25

申请号：US18562502

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Yoshihisa MATSUBARA ,  Yoshihiro TSUTSUMI ,  Yohei YAMASHITA

IPC: H01L23/00 ,  B32B43/00 ,  H01L23/544

CPC classification number: H01L24/96 ,  B32B43/006 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2224/96

Abstract: The substrate processing method includes processes (A) to (D). The process (A) prepares a laminated substrate including a first substrate, a first absorption layer that absorbs laser light, a second absorption layer having an absorption coefficient with respect to the laser light higher than that of the first absorption layer, a device layer, and a second substrate in this order. The process (B) irradiates the laser light with respect to the first substrate from a side opposite to the second substrate. The process (C) irradiates the laser light transmitted through the first substrate on the first absorption layer, to form a modified layer in the first absorption layer. The process (D) separates the first substrate and the second substrate from each other using the modified layer as a starting point.

公开(公告)号：US20240162081A1

公开(公告)日：2024-05-16

申请号：US18549616

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Hayato TANOUE

IPC: H01L21/762 ,  B23K26/53 ,  B23K101/40 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L21/76256 ,  B23K26/53 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/268 ,  B23K2101/40

Abstract: A stacked substrate manufacturing method includes (A) to (D) described below. (A) forming a bonding layer, which includes an oxide layer, on a surface of a first semiconductor substrate. (B) bringing the oxide layer of the bonding layer into contact with a second semiconductor substrate, and bonding the first semiconductor substrate and the second semiconductor substrate with the bonding layer therebetween. (C) forming, after the bonding of the first semiconductor substrate and the second semiconductor substrate, a modification layer with a laser beam on a first division plane along which the first semiconductor substrate is to be divided in a thickness direction thereof. (D) thinning the first semiconductor substrate bonded to the second semiconductor substrate with the bonding layer therebetween by dividing the first semiconductor substrate starting from the modification layer formed at the first division plane.

公开(公告)号：US20240162061A1

公开(公告)日：2024-05-16

申请号：US18549934

申请日：2022-02-28

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro KAWAGUCHI ,  Yohei YAMASHITA

IPC: H01L21/67 ,  H01L21/268

CPC classification number: H01L21/67092 ,  H01L21/268

Abstract: A substrate processing apparatus configured to process a substrate by radiating laser light to the substrate includes a substrate holder configured to hold the substrate; a laser radiation lens configured to radiate the laser light to the substrate held by the substrate holder; a laser oscillator configured to emit the laser light toward a space above a substrate holding surface of the substrate holder; a mirror configured to change, above the substrate holder, a direction of the laser light emitted from the laser oscillator into a horizontal direction; and an optical system configured to adjust an output of the laser light incident from the mirror, and guide the laser light to the laser radiation lens.

公开(公告)号：US20240087900A1

公开(公告)日：2024-03-14

申请号：US17907217

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/447 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01L21/447 ,  H01L21/67115 ,  H01L21/67144

Abstract: A processing method of a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A laser absorption layer is formed on the second substrate. The substrate processing method includes forming a separation modification layer by radiating a laser beam to the laser absorption layer in a pulse shape to accumulate a stress in the laser absorption layer; and separating the second substrate by releasing the accumulated stress in a chain manner.

公开(公告)号：US20230178374A1

公开(公告)日：2023-06-08

申请号：US17995171

申请日：2021-01-18

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: H01L21/268 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01L21/67092

Abstract: A substrate processing method of a combined substrate in which a first substrate having a surface film stacked thereon and a second substrate are bonded to each other includes separating the first substrate as a removing target from the second substrate; and removing or modifying at least a surface layer of the surface film at a peripheral portion of the second substrate by radiating laser light to an exposed surface of the surface film remaining at the peripheral portion of the second substrate, the exposed surface being exposed as a result of the separating of the first substrate.

公开(公告)号：US20220406603A1

公开(公告)日：2022-12-22

申请号：US17772166

申请日：2020-09-03

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/321 ,  H01L21/67 ,  H01L21/677

Abstract: A manufacturing method of a chip-attached substrate includes preparing a stacked substrate including multiple chips, a first substrate to which the multiple chips are temporarily bonded, and a second substrate bonded to the first substrate with the multiple chips therebetween; and separating the multiple chips bonded to the first substrate and the second substrate from the first substrate to bond the multiple chips to one surface of a third substrate including a device layer.

公开(公告)号：US20250054904A1

公开(公告)日：2025-02-13

申请号：US18797894

申请日：2024-08-08

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Kevin RYAN ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3205

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

公开(公告)号：US20240082957A1

公开(公告)日：2024-03-14

申请号：US18261520

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC: B23K26/361 ,  B23K26/08 ,  B23K26/18 ,  B23K26/402 ,  H01L21/268

CPC classification number: B23K26/361 ,  B23K26/0823 ,  B23K26/083 ,  B23K26/18 ,  B23K26/402 ,  H01L21/268 ,  B23K2103/56

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light to a laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller performs, based on a thickness of the laser absorbing film, a control of selecting a position of a separation surface between the first substrate and the second substrate from one of a position between the first substrate and the laser absorbing film or a position between the a separation facilitating film and the second substrate.

公开(公告)号：US20230023577A1

公开(公告)日：2023-01-26

申请号：US17788776

申请日：2020-12-09

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE ,  Yasutaka MIZOMOTO

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/67

Abstract: A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.