公开(公告)号：US20150007772A1

公开(公告)日：2015-01-08

申请号：US14312137

申请日：2014-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei FUKUSHIMA ,  Hiroyuki MATSUURA ,  Yutaka MOTOYAMA ,  Koichi SHIMADA ,  Takeshi ANDO

IPC: C23C16/509

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32779

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

Abstract translation: 基板处理装置包括：被配置为被抽真空的处理容器; 保持单元，其构造成保持多个基板并插入到处理容器中或与处理容器分离; 气体供给单元，其构造成将气体供给到所述处理容器内; 由等离子体隔壁分隔和形成的等离子体产生箱; 电感耦合电极，位于等离子体发生箱的沿其长度方向的外侧壁; 高频电源，通过馈电线连接到电感耦合电极; 位于等离子体生成箱的外部，处理容器与电感耦合电极之间的配置在等离子体生成箱的外侧壁附近，或至少部分地与外侧壁接触的接地电极。

公开(公告)号：US20140295676A1

公开(公告)日：2014-10-02

申请号：US14228930

申请日：2014-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke SUZUKI ,  Yutaka MOTOYAMA

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/67109

Abstract: A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas.

Abstract translation: 一种操作立式热处理装置的方法包括：通过供应清洁气体来清洗垂直反应室的内部; 通过多次执行包括交替地供应第一气体并供应第二气体同时从第二气体产生等离子体的循环来预涂覆反应室的内部; 通过将保持虚拟半导体衬底或导电衬底的衬底保持单元装载到反应室中并且在不供应第一气体的同时从第二气体产生等离子体的同时供给第二气体来消除电荷; 将保持多个产品半导体基板的基板保持单元装载到反应室中; 以及通过多次执行包括交替地供应所述第一气体并在从所述第二气体产生等离子体的同时供给所述第二气体的循环来在所述反应室中形成薄膜。

公开(公告)号：US20240327984A1

公开(公告)日：2024-10-03

申请号：US18615087

申请日：2024-03-25

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra Basu ,  Hiroto FUJIKAWA ,  Yutaka MOTOYAMA ,  Keita KUMAGAI

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52

CPC classification number: C23C16/45553 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52

Abstract: A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.

公开(公告)号：US20220384184A1

公开(公告)日：2022-12-01

申请号：US17804170

申请日：2022-05-26

Applicant: Tokyo Electron Limited

Inventor： Yutaka MOTOYAMA ,  Atsushi ENDO

IPC: H01L21/02 ,  C23C16/458

Abstract: A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas.

公开(公告)号：US20210202248A1

公开(公告)日：2021-07-01

申请号：US17132656

申请日：2020-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Daisuke SUZUKI ,  Hiroyuki HAYASHI ,  Yutaka MOTOYAMA

IPC: H01L21/02

Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

公开(公告)号：US20150267293A1

公开(公告)日：2015-09-24

申请号：US14664986

申请日：2015-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Kohei FUKUSHIMA ,  Keisuke SUZUKI ,  Hiromi TAKAHASHI

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/4411 ,  C23C16/4401 ,  C23C16/45546 ,  C23C16/46

Abstract: An operating method of a vertical heat treatment apparatus which performs a film forming process by keeping the interior of a vertical reaction tube surrounded by a heating mechanism at a vacuum atmosphere and by supplying film forming gases to substrates accommodated within the reaction tube, includes: performing a film forming process with respect to the substrates by carrying a substrate holder holding a plurality of substrates in a shelf form into the reaction tube; carrying out the substrate holder from the reaction tube; and carrying a cooling jig into the reaction tube to cool an inner wall of the reaction tube so as to peel a thin film adhering to the inner wall of the reaction tube by a thermal stress and so as to collect the thin film in the cooling jig by thermophoresis.

Abstract translation: 一种垂直热处理装置的操作方法，其通过将由加热机构包围的垂直反应管的内部保持在真空气氛下并通过向容纳在反应管内的基板供给成膜气体而进行成膜处理的方法包括：执行 通过将保持多个基板的基板保持器保持在反应管中，相对于基板的成膜工艺; 从反应管中进行基板保持器; 并将冷却夹具装入反应管中以冷却反应管的内壁，以便通过热应力剥离附着在反应管内壁上的薄膜，并将薄膜收集在冷却夹具中 通过热泳。

公开(公告)号：US20140295082A1

公开(公告)日：2014-10-02

申请号：US14229493

申请日：2014-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Keisuke SUZUKI ,  Kohei FUKUSHIMA ,  Shingo HISHIYA

IPC: C23C16/44 ,  B05C5/02

CPC classification number: B05C5/02 ,  C23C16/4405 ,  C23C16/4408 ,  H01L21/67109 ,  H01L21/67757

Abstract: A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container.

Abstract translation: 具有安装有加热部件的立式反应容器的立式热处理装置的驱动方法包括：进行将基板保持架支撑体的晶片装载到反应容器的处理; 执行在存储单元处存储第一气体并对第一气体加压的成膜过程，或者执行将第一气体供应到真空气氛反应容器的步骤和将第二气体供应到反应容器的步骤; 随后执行卸载衬底保持器支撑件并将清洗气体供应到反应容器中以强制剥离附着到反应容器上的薄膜的吹扫过程; 并且在进行清洗处理的同时，进行重复将清洗气体储存在储存单元处的过程，对气体加压并将气体排出到反应容器中。