公开(公告)号：US20070153865A1

公开(公告)日：2007-07-05

申请号：US11612076

申请日：2006-12-18

申请人： Osamu Maeda ,  Masaki Shiozaki

发明人： Osamu Maeda ,  Masaki Shiozaki

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18333 ,  H01S5/18338 ,  H01S2301/166

摘要： A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.

摘要翻译： 提供了可以容易地制造并且可以选择性地仅抑制高阶横模振荡的VCSEL。 VCSEL包括谐振器，第一电流限制层和第二电流限制层。 谐振器包括具有发光区域的有源层和在其间设置有有源层的一对第一多层反射器和第二多层反射器，并且在给定波长中产生谐振。 第一电流限制层具有电流注入区域是与发光区域相对应的区域，并且形成在包括驻波的波腹的区域中。 第二电流限制层具有直径小于第一电流注入区的直径的电流注入区，并形成在包括节点驻波的区域。

公开(公告)号：US08435815B2

公开(公告)日：2013-05-07

申请号：US12926917

申请日：2010-12-17

申请人： Masaki Shiozaki ,  Osamu Maeda ,  Takahiro Arakida ,  Susumu Sato

发明人： Masaki Shiozaki ,  Osamu Maeda ,  Takahiro Arakida ,  Susumu Sato

IPC分类号： B82Y20/00

CPC分类号： H01S5/18355 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18358

摘要： A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.

摘要翻译： 表面发射半导体激光器的制造方法包括以下步骤：形成具有下层多层膜反射体的层叠结构，所述下多层膜反射体包括具有至少一层的下部可氧化层，具有发光区域的有源层，上部多层膜 膜反射器，其依次包括基板上的上部可氧化层和上层; 在上层提供第一凹槽; 并且在所述堆叠结构中设置包括与所述第一凹槽重叠的部分的平面形状的第二凹槽和不与所述第一凹槽重叠的部分。

公开(公告)号：US08098703B2

公开(公告)日：2012-01-17

申请号：US12656427

申请日：2010-01-29

申请人： Osamu Maeda ,  Yuji Masui ,  Masaki Shiozaki ,  Susumu Sato ,  Takahiro Arakida

发明人： Osamu Maeda ,  Yuji Masui ,  Masaki Shiozaki ,  Susumu Sato ,  Takahiro Arakida

IPC分类号： H01S5/00

CPC分类号： H01S5/18313 ,  B82Y20/00 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/0607 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18355 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/3404 ,  H01S5/3432 ,  H01S5/423 ,  H01S2301/166 ,  H01S2304/04

摘要： A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.

摘要翻译： 提供允许在一个方向上稳定激光的偏振方向的激光二极管。 激光二极管包括从基板侧起按顺序包括下层多层反射镜，有源层和上多层反射镜的叠层结构，其中层叠结构包括柱状台面部分，该柱状台面部分包括下多层反射镜的上部 有源层和上层多层反射镜以及下层多层反射镜包括多对低折射率层和高折射率层，以及多个氧化层，其不均匀分布在围绕中心的方向上旋转 在除了一个或多个低折射率层的中心区域之外的区域中的台面部分的轴线。

公开(公告)号：US20090180506A1

公开(公告)日：2009-07-16

申请号：US12318421

申请日：2008-12-29

申请人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

发明人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

IPC分类号： H01S5/183

CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18347 ,  H01S5/18358 ,  H01S2301/166 ,  H01S2301/176

摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

摘要翻译： 提供了能够提供高输出基本横模的垂直腔面发射激光器（VCSEL），同时防止高阶横模的振荡。 VCSEL包括形成在半导体层上的包括有源层和电流限制层的半导体层和横向模式调整部。 电流限制层具有电流注入区域和电流限制区域。 横模调整部具有高反射面积和低反射面积。 高反射率区域形成在包括与电流注入区域的中心点相对的第一相对区域的区域中。 高反射率区域的中心点布置在与第一相对区域不同的区域中。 在与电流注入区域相对的相对区域中，在没有形成高反射率区域的区域中形成低反射率区域。

公开(公告)号：US20080240194A1

公开(公告)日：2008-10-02

申请号：US12076791

申请日：2008-03-24

申请人： Osamu Maeda ,  Masaki Shiozaki ,  Norihiko Yamaguchi ,  Yoshinori Yamauchi ,  Takahiro Arakida

发明人： Osamu Maeda ,  Masaki Shiozaki ,  Norihiko Yamaguchi ,  Yoshinori Yamauchi ,  Takahiro Arakida

IPC分类号： H01S5/183 ,  H01L33/00

CPC分类号： H01S5/18355 ,  H01S5/0425 ,  H01S5/1017 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18391 ,  H01S2301/14

摘要： A VSCEL capable of being easily and inexpensively manufactured and of stabilizing the polarization direction of laser light in one direction is provided. The Vertical Cavity Surface Emitting Laser includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflector in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.

摘要翻译： 提供了能够容易且廉价地制造并且在一个方向上稳定激光的偏振方向的VSCEL。 垂直空腔表面发射激光器包括从基板侧在基板上依次包括第一多层膜反射器，具有发光区域的有源层和第二多层膜反射器的半导体层叠结构。 半导体层叠结构具有设置有与其间的发光区域相对的区域的一对沟槽，以及包括至少设置在与发光区域相对的区域中的第一非氧化区域的一个或多个第一氧化层 以及设置在所述一对槽的每个侧面上的第一氧化区域。

公开(公告)号：US20070014324A1

公开(公告)日：2007-01-18

申请号：US11427003

申请日：2006-06-28

申请人： Osamu Maeda ,  Masaki Shiozaki ,  Norihiko Yamaguchi ,  Yoshinori Yamauchi ,  Yuji Masui

发明人： Osamu Maeda ,  Masaki Shiozaki ,  Norihiko Yamaguchi ,  Yoshinori Yamauchi ,  Yuji Masui

IPC分类号： H01S3/098 ,  H01S5/00

CPC分类号： H01S5/18391 ,  H01S5/18313 ,  H01S5/18325 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18344 ,  H01S5/18355 ,  H01S2301/166

摘要： In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.

摘要翻译： 在VCSEL中，依次层叠第一多层膜反射体，具有发光中心区域的有源层，第二多层膜反射体，横模式调整层。 第一多层膜反射器具有四边形电流注入区域，对应于发光中心区域的对角线交叉。 第二多层膜反射器具有设置在对应于当前注入区域的一个对角线的区域中的发光窗口和设置在其间的发光窗口的一对凹槽。 相对于发光窗设置横向模式调整层，其周边区域的反射率低于其中央区域的反射率。

公开(公告)号：US07126587B2

公开(公告)日：2006-10-24

申请号：US11087853

申请日：2005-03-24

申请人： Masaaki Kawakami ,  Hirotsugu Kubo ,  Masaki Shiozaki

发明人： Masaaki Kawakami ,  Hirotsugu Kubo ,  Masaki Shiozaki

IPC分类号： G09G5/00

CPC分类号： G06F3/04886 ,  G06F3/0237 ,  G06F3/04842

摘要： In case where a key having a detection region (inner frame) in which user's instructions can be accepted is displayed according to a certain operation status of an apparatus, and in case where there is an invalid region in which the user's instruction is not detectable is adjacent to a key display region (outer frame) of the key, the detection region of the key is caused to be larger than the key display region by utilizing the invalid region. Moreover, the detection region is expanded/shrunk according to key arrangement and a number of keys to be displayed. With this, the detection region of the key is expanded/shrunk according to according to the key arrangement on the screen in a display-cum-operation device in which a display device and a coordinate input device are integrated.

摘要翻译： 在具有可以接受用户指令的检测区域（内框）的密钥的情况下，根据设备的某个操作状态来显示，并且在存在用户指令不可检测的无效区域的情况下， 与键的键显示区域（外框）相邻，通过利用无效区域使键的检测区域大于键显示区域。 此外，检测区域根据键排列和要显示的键的数量进行扩展/缩小。 由此，根据显示装置和坐标输入装置的显示兼容装置中的屏幕上的键配置，键的检测区域被扩大/缩小。

公开(公告)号：US20060192209A1

公开(公告)日：2006-08-31

申请号：US11344468

申请日：2006-01-31

申请人： Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

发明人： Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/34333 ,  H01S5/4031

摘要： An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

公开(公告)号：US08513683B2

公开(公告)日：2013-08-20

申请号：US11344468

申请日：2006-01-31

申请人： Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

发明人： Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/34333 ,  H01S5/4031

摘要： An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

摘要翻译： 通过防止漏电流流过衬底的高缺陷区域来提供具有改善的发光效率的光学集成半导体发光器件。 光集成半导体发光器件包括：基板，其中在由具有第一平均位错密度的晶体制成的低缺陷区域中，包括具有高于第一平均位错密度的第二平均位错密度的一个或多个高缺陷区域 ; 和形成在基板上的III-V族氮化物半导体层，具有多个发光器件结构，并且在包括对应于高缺陷区域的区域（高缺陷区域）的区域中具有沟槽。

公开(公告)号：US08363687B2

公开(公告)日：2013-01-29

申请号：US13064788

申请日：2011-04-15

申请人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

发明人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

IPC分类号： H01S5/00

CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18347 ,  H01S5/18358 ,  H01S2301/166 ,  H01S2301/176

摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.