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63 条记录 (耗时 0.039 秒)

    Positive resist composition, resist laminates and process for forming resist patterns
    11.
    发明申请
    Positive resist composition, resist laminates and process for forming resist patterns 审中-公开
    正抗蚀剂组合物，抗蚀剂层压体和形成抗蚀剂图案的方法

    公开(公告)号：US20070009828A1

    公开(公告)日：2007-01-11

    申请号：US10560126

    申请日：2004-06-11

    申请人： Koki Tamura ,  Daisuke Kawana ,  Tomotaka Yamada ,  Takayuki Hosono ,  Taku Hirayama ,  Kazufumi Sato ,  Hiroshi Shimbori ,  Tomoyuki Ando

    发明人： Koki Tamura ,  Daisuke Kawana ,  Tomotaka Yamada ,  Takayuki Hosono ,  Taku Hirayama ,  Kazufumi Sato ,  Hiroshi Shimbori ,  Tomoyuki Ando

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0757 ,  G03F7/0045

    摘要： A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2′) represented by a general formula (II′) shown below. In the general formulas below, R1 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R2 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R3 represents an acid dissociable, dissolution inhibiting group, R6 represents an alkyl group of 1 to 5 carbon atoms, R7 represents either an alkyl group of 1 to 5 carbon atoms or a hydrogen atom, and R8 represents an alicyclic hydrocarbon group of 5 to 15 carbon atoms.

    摘要翻译： 含有在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括倍半硅氧烷树脂（A1） ），由下述通式（I）表示的结构单元（a1），由下述通式（II）表示的结构单元（a2）和由以下所示的通式（III）表示的结构单元（a3） ，或含有下述通式（I）表示的结构单元（a1）的倍半硅氧烷树脂（A2）和由下述通式（II'）表示的结构单元（a2'）。 在下列通式中，R 1表示1至5个碳原子的直链或支链亚烷基，R 2表示直链或支链的亚烷基， 1至5个碳原子，R 3表示酸解离的溶解抑制基团，R 6表示1至5个碳原子的烷基，R 7， / SUP>表示1〜5个碳原子的烷基或氢原子，R 8表示5〜15个碳原子的脂环族烃基。

    Semiconductor device of the LOC structure type having a flexible wiring pattern
    12.
    发明授权
    Semiconductor device of the LOC structure type having a flexible wiring pattern 失效
    LOC结构类型的半导体器件具有柔性布线图案

    公开(公告)号：US5473188A

    公开(公告)日：1995-12-05

    申请号：US274290

    申请日：1994-07-13

    申请人： Tomoyuki Ando

    发明人： Tomoyuki Ando

    IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L23/498

    CPC分类号： H01L23/4951 ,  H01L25/105 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/83192 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014

    摘要： In a semiconductor device of the LOC (lead on chip) structure type according to the present invention, one ends of external connector leads are fixed to an insulating tape and the other ends thereof extend outside the insulating tape. Inner leads for internal wiring are arranged and fixed on the insulating tape, independently of the others. The insulating tape integral to both of these leads is fixed to the main surface of a semiconductor chip and the leads are connected to their corresponding electrode pads on the semiconductor chip via bonding wires. The insulating tape is bonded to a lead frame before the punching process and it thus made integral to the leads is then punched by the punching process. It therefore needs no bonding margin for the leads.

    摘要翻译： 在根据本发明的LOC（片上芯片）结构类型的半导体器件中，外部连接器引线的一端固定到绝缘带，并且其另一端延伸到绝缘带外部。 用于内部布线的内部引线被独立于其它布置并固定在绝缘带上。 与这两个引线一体的绝缘胶片固定在半导体芯片的主表面上，引线通过接合线连接到半导体芯片上相应的电极焊盘。 在冲压加工之前，将绝缘带粘合到引线框架上，然后通过冲压工艺对引线构成一体。 因此，引线不需要接合边缘。

    Positive Resist Composition and Method of Forming Resist Pattern
    19.
    发明申请
    Positive Resist Composition and Method of Forming Resist Pattern 有权
    正电阻组合物和形成抗蚀剂图案的方法

    公开(公告)号：US20080241747A1

    公开(公告)日：2008-10-02

    申请号：US10586694

    申请日：2005-01-14

    申请人： Takuma Hojo ,  Kiyoshi Ishikawa ,  Tomoyuki Ando

    发明人： Takuma Hojo ,  Kiyoshi Ishikawa ,  Tomoyuki Ando

    IPC分类号： G03F7/004 ,  G03F7/26

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/122 ,  Y10S430/126

    摘要： A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).

    摘要翻译： 显示出大的曝光裕度，优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物，以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。 该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分 ）包含由下述通式（I）表示的结构单元（a1），其中通过用酸取代上述通式（I）中的羟基已被保护的结构单元（a2） 由下述通式（II）表示的可离解的溶解抑制基团（II）和其中通式（I）中的羟基用其氢原子进行保护而被保护的结构单元（a3） 无环酸解离，溶解抑制组（III）。