公开(公告)号：US08623676B2

公开(公告)日：2014-01-07

申请号：US13218728

申请日：2011-08-26

申请人： Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/18

CPC分类号： H01L33/40 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二导电层，第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。 第二半导体层设置在第一导电层与第一半导体层之间。 发光部分设置在第一和第二半导体层之间。 第二导电层与第二半导体层和第二导电层在第二半导体层和第一导电层之间接触。 第一和第二导电层可透射从发光部分发射的光。 第一导电层包括具有第一平均晶粒直径的多晶体。 第二导电层包括第二平均粒径为150纳米以下且小于第一平均粒径的多晶体。

公开(公告)号：US20110215291A1

公开(公告)日：2011-09-08

申请号：US12873586

申请日：2010-09-01

申请人： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L31/0256 ,  H01L31/0352

CPC分类号： H01L31/022466 ,  B82Y20/00 ,  H01L31/035236 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.

摘要翻译： 根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。 半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

公开(公告)号：US09105810B2

公开(公告)日：2015-08-11

申请号：US13404607

申请日：2012-02-24

申请人： Toshihide Ito ,  Hiroshi Katsuno ,  Shinya Nunoue

发明人： Toshihide Ito ,  Hiroshi Katsuno ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。 第一半导体层是第一导电类型。 发光单元设置在第一半导体层上。 第二半导体层设置在发光单元上并且是第二导电类型。 反射电极设置在第二半导体层上并且包括Ag。 氧化物层设置在反射电极上。 氧化物层是绝缘的并且具有第一开口。 含氧层设置在氧化物层上。 含氮层是绝缘的，并且具有与第一开口连通的第二开口。

公开(公告)号：US08847271B2

公开(公告)日：2014-09-30

申请号：US13729563

申请日：2012-12-28

申请人： Hiroshi Katsuno ,  Satoshi Mitsugi ,  Toshihide Ito ,  Shinya Nunoue

发明人： Hiroshi Katsuno ,  Satoshi Mitsugi ,  Toshihide Ito ,  Shinya Nunoue

IPC分类号： H01L33/38 ,  H01L29/20 ,  H01L33/62 ,  H01L33/22 ,  H01L33/44 ,  H01L33/20

CPC分类号： H01L33/42 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。 第一层具有第一和第二表面。 第二层设置在第一层的第二表面的一侧。 发光层设置在第一和第二层之间。 电介质层接触第二表面，折射率低于第一层的折射率。 第一电极包括第一和第二部分。 第一部分接触第二表面并邻近介电层设置。 第二部分与第一半导体层与电介质层的相对侧接触。 第二电极与第二层与发光层的相对侧接触。

公开(公告)号：US08455911B2

公开(公告)日：2013-06-04

申请号：US12873586

申请日：2010-09-01

申请人： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L31/022466 ,  B82Y20/00 ,  H01L31/035236 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.

摘要翻译： 根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。 半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

公开(公告)号：US20140054594A1

公开(公告)日：2014-02-27

申请号：US13729563

申请日：2012-12-28

申请人： Hiroshi Katsuno ,  Satoshi Mitsugi ,  Toshihide Ito ,  Shinya Nunoue

发明人： Hiroshi Katsuno ,  Satoshi Mitsugi ,  Toshihide Ito ,  Shinya Nunoue

IPC分类号： H01L33/62 ,  H01L29/20

CPC分类号： H01L33/42 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。 第一层具有第一和第二表面。 第二层设置在第一层的第二表面的一侧。 发光层设置在第一和第二层之间。 电介质层接触第二表面，折射率低于第一层的折射率。 第一电极包括第一和第二部分。 第一部分接触第二表面并邻近介电层设置。 第二部分与第一半导体层与电介质层的相对侧接触。 第二电极与第二层与发光层的相对侧接触。

公开(公告)号：US20120132943A1

公开(公告)日：2012-05-31

申请号：US13204013

申请日：2011-08-05

申请人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

发明人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

IPC分类号： H01L33/58

CPC分类号： H01L33/22 ,  H01L33/325 ,  H01L33/40

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，电极，p型半导体层和发光层。 p型半导体层设置在n型半导体层和电极之间，并且包括与电极接触的p侧接触层。 发光层设置在n型和p型半导体层之间。 p侧接触层包括具有垂直于从n型半导体层朝向p型半导体层的第一方向的平面的平坦部分和从平坦部分向电极突出的多个突出部分。 沿着第一方向的多个突出部分的高度小于从发光层发射的光的主波长的四分之一。 平面内的多个突出部的密度为5×10 7 / cm 2以上2×10 8 / cm 2以下。

公开(公告)号：US20080173927A1

公开(公告)日：2008-07-24

申请号：US11896860

申请日：2007-09-06

申请人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

发明人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

IPC分类号： H01L29/788 ,  H01L21/336 ,  H01L29/792

CPC分类号： H01L21/28273

摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.

摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。 电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。

公开(公告)号：US20120093695A1

公开(公告)日：2012-04-19

申请号：US13271231

申请日：2011-10-12

申请人： Misako IWAKURA ,  Kohei Ota ,  Toshihide Ito

发明人： Misako IWAKURA ,  Kohei Ota ,  Toshihide Ito

IPC分类号： B01D53/94 ,  B01D39/20

CPC分类号： C04B37/005 ,  C04B28/24 ,  C04B35/565 ,  C04B35/6269 ,  C04B35/62807 ,  C04B35/62897 ,  C04B35/6303 ,  C04B35/6316 ,  C04B38/0019 ,  C04B41/009 ,  C04B41/5035 ,  C04B41/5089 ,  C04B41/85 ,  C04B41/87 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3826 ,  C04B2235/5216 ,  C04B2235/5224 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/6588 ,  C04B2237/083 ,  C04B2237/365 ,  C04B2237/54 ,  F01N3/0222 ,  Y02T10/20 ,  C04B38/0006 ,  C04B14/4625 ,  C04B41/5059 ,  C04B41/4519 ,  C04B14/324 ,  C04B24/383

摘要： A honeycomb structure includes a porous silicon carbide honeycomb fired body and a silicon-containing oxide layer. The porous silicon carbide honeycomb fired body has at least one cell wall defining a plurality of cells extending along a longitudinal direction of the silicon carbide honeycomb fired body. The plurality of cells is provided in parallel with one another. The silicon carbide honeycomb fired body contains silicon carbide particles. The silicon-containing oxide layer is provided on a surface of each of the silicon carbide particles. The silicon-containing oxide layer has a thickness of from about 5 nm to about 100 nm measured with an X-ray photoelectron spectroscopy.

摘要翻译： 蜂窝结构体包括多孔碳化硅蜂窝烧制体和含硅氧化物层。 多孔碳化硅蜂窝烧制体具有限定沿着碳化硅蜂窝烧制体的长度方向延伸的多个单元的至少一个单元壁。 多个单元彼此并联设置。 碳化硅蜂窝烧制体包含碳化硅颗粒。 在每个碳化硅颗粒的表面上设置含硅氧化物层。 利用X射线光电子能谱法测量含硅氧化物层的厚度为约5nm至约100nm。

公开(公告)号：US07839488B2

公开(公告)日：2010-11-23

申请号：US12082949

申请日：2008-04-15

申请人： Yoshinori Tabata ,  Toshihide Ito ,  Takeshi Kawakami ,  Tsuyoshi Kashiwagi ,  Tsuyoshi Yamauchi

发明人： Yoshinori Tabata ,  Toshihide Ito ,  Takeshi Kawakami ,  Tsuyoshi Kashiwagi ,  Tsuyoshi Yamauchi

IPC分类号： G03B27/54 ,  G03B27/70

CPC分类号： G02B26/0816 ,  G02B27/648 ,  G03H1/04 ,  G03H2001/0417 ,  G03H2001/0473 ,  G03H2222/18

摘要： In order to adjust the optical axis of a light beam L1 in an exposure apparatus, on a support body in an XYZ three-dimensional coordinate system are mounted: a first mirror 10 having a reflective surface M1 obtained by rotating a plane parallel to the XY plane around an axis 11 parallel to the Y axis by an angle of α; and a second mirror 20 having a reflective surface M2 obtained by rotating a plane parallel to the XZ plane around an axis 21 parallel to the X axis by an angle of β. There are provided: position adjustment means for moving the entire support body having the two mirrors parallel to the XY plane; and angle adjustment means for adjusting the angle of the second mirror 20. The incident light L1 is reflected on the reflective surfaces M1 and M2 to be output as an outgoing light L3, where it is possible to perform an optical axis adjustment concerning position and angle by controlling the position adjustment means and the angle adjustment means.

摘要翻译： 为了调节曝光装置中的光束L1的光轴，安装在XYZ三维坐标系中的支撑体上，具有通过使平行于XY的平面旋转而获得的反射面M1的第一反射镜10 平面于与Y轴平行的轴线11为α; 以及第二反射镜20，其具有通过使平行于XZ平面的平面围绕平行于X轴的轴线21旋转角度＆bgr而获得的反射面M2。 提供了用于使具有平行于XY平面的两个反射镜的整个支撑体移动的位置调整装置; 以及用于调整第二反射镜20的角度的角度调节装置。入射光L1在反射表面M1和M2上被反射，作为出射光L3输出，在那里可以执行关于位置和角度的光轴调节 通过控制位置调节装置和角度调节装置。