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131 条记录 (耗时 0.038 秒)

    Image recognition device and image recognition method
    11.
    发明授权
    Image recognition device and image recognition method 有权
    图像识别装置和图像识别方法

    公开(公告)号：US08108408B2

    公开(公告)日：2012-01-31

    申请号：US12521891

    申请日：2008-06-12

    申请人： Satoshi Kondo ,  Aki Yoneda ,  Ko Mizuno ,  Takashi Ogura

    发明人： Satoshi Kondo ,  Aki Yoneda ,  Ko Mizuno ,  Takashi Ogura

    IPC分类号： G06F7/00

    CPC分类号： G06F17/30256 ,  G06K9/00684

    摘要： An image recognition device includes: an image input unit obtaining an input image corresponding to a target image to be recognized; a similar image search unit searching out at least one similar image similar to the target image obtained by the image input unit from among images generated independently of the image recognition device, and unintentionally obtained; a keyword extraction unit extracting a plurality of keywords corresponding to candidates for a recognition result of the target image; a keyword analysis unit determining at least one likely keyword likely to be the recognition result of the target image from among the plurality of keywords extracted by the keyword extraction unit by analyzing the plurality of keywords; and a presentation unit outputting at least one likely keyword determined by the keyword analysis unit, as the recognition result of the target image.

    摘要翻译： 图像识别装置包括：图像输入单元，获得与要识别的目标图像相对应的输入图像; 类似的图像搜索单元，从独立于图像识别装置生成的图像中搜索类似于由图像输入单元获得的目标图像的至少一个类似图像，并且无意地获得; 关键词提取单元，提取与所述目标图像的识别结果的候选对应的多个关键字; 关键字分析单元，通过分析所述多个关键字，从所述关键词提取单元提取的所述多个关键字中确定可能是所述目标图像的识别结果的至少一个可能关键字; 以及表示单元，输出由关键词分析单元确定的至少一个可能关键字作为目标图像的识别结果。

    ULTRASONIC TRANSDUCER
    12.
    发明申请
    ULTRASONIC TRANSDUCER 有权
    超声波传感器

    公开(公告)号：US20110152691A1

    公开(公告)日：2011-06-23

    申请号：US13060704

    申请日：2010-06-04

    申请人： Masako Ikeda ,  Takashi Ogura

    发明人： Masako Ikeda ,  Takashi Ogura

    IPC分类号： A61B8/14 ,  B29C39/12 ,  B29C47/00

    CPC分类号： B06B1/0677 ,  A61B8/00 ,  A61B8/4405 ,  A61B8/4455 ,  G01N29/0672 ,  G10K11/002

    摘要： An ultrasonic transducer includes: a piezoelectric transducer (1) emitting ultrasonic waves; and a backing layer (4) provided in contact with a back side of the piezoelectric transducer (1) and attenuating ultrasonic waves that are emitted toward the back side of the piezoelectric transducer (1) and have an opposite phase to the phase of ultrasonic waves emitted toward a front side of the piezoelectric transducer (1). The acoustic tubes (5) are disposed in the backing layer (4) such that a longitudinal direction of each acoustic tube (5) is in line with a traveling direction of the ultrasonic waves emitted by the piezoelectric transducer (1) toward the front and the back side. The acoustic tubes (5) have mutually different lengths on the basis of a principle of an acoustic wave synthesis, and attenuate in whole or in part the ultrasonic waves emitted by the piezoelectric transducer (1) toward the backing layer (4).

    摘要翻译： 超声换能器包括：发射超声波的压电换能器（1） 以及设置成与所述压电换能器（1）的背面接触并且衰减朝向所述压电换能器（1）的背侧发射并且与超声波的相位相反的超声波的背衬层（4） 朝向压电换能器（1）的前侧发射。 声管（5）设置在背衬层（4）中，使得每个声管（5）的纵向方向与压电换能器（1）朝向前方发射的超声波的行进方向一致，以及 背面。 声管（5）基于声波合成的原理具有相互不同的长度，并且将压电换能器（1）发射的超声波全部或部分衰减到背衬层（4）。

    Method of manufacturing semiconductor device
    13.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07947568B2

    公开(公告)日：2011-05-24

    申请号：US12548471

    申请日：2009-08-27

    申请人： Keiji Sakamoto ,  Takashi Ogura ,  Masashige Moritoki

    发明人： Keiji Sakamoto ,  Takashi Ogura ,  Masashige Moritoki

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76232

    摘要： A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method.

    摘要翻译： 制造半导体器件的方法包括在衬底中形成STI沟槽的工艺，在STI沟槽的侧壁和底表面上形成热氧化膜的工艺，在表面上进行等离子体处理的工艺 位于STI沟槽的底部的热氧化膜，以及使用CVD法在STI沟槽中形成绝缘膜的工序。

    Semiconductor device and production method therefor
    15.
    发明申请
    Semiconductor device and production method therefor 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20080203500A1

    公开(公告)日：2008-08-28

    申请号：US12071126

    申请日：2008-02-15

    申请人： Takashi Ogura ,  Nobuyuki Ikarashi ,  Toshiyuki Iwamoto ,  Hirohito Watanabe

    发明人： Takashi Ogura ,  Nobuyuki Ikarashi ,  Toshiyuki Iwamoto ,  Hirohito Watanabe

    IPC分类号： H01L29/78

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/78

    摘要： A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation.

    摘要翻译： 一种设置有MIS型场效应晶体管的半导体器件，包括硅衬底，具有通过含硅绝缘膜形成在硅衬底上的高介电常数金属氧化物膜的栅极绝缘膜，含硅栅电极 形成在所述栅极绝缘膜上的侧壁，以及在所述栅电极的侧面上包含氧化硅作为构成材料的侧壁，其中，所述侧壁与所述栅电极的至少所述侧面之间插入有氮化硅膜。 该半导体器件尽管具有栅极长度小的精细结构，但能够实现低功耗和快速操作。

    Electronic Device and Package Used for the Same
    16.
    发明申请
    Electronic Device and Package Used for the Same 审中-公开
    用于其的电子设备和包装

    公开(公告)号：US20080048315A1

    公开(公告)日：2008-02-28

    申请号：US11664108

    申请日：2005-09-08

    申请人： Natsuyo Nagano ,  Takashi Ogura

    发明人： Natsuyo Nagano ,  Takashi Ogura

    IPC分类号： H03H9/05 ,  H01L23/15

    CPC分类号： H03H9/0576 ,  H01L24/06 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2924/16195 ,  H01L2924/181 ,  H03H9/0571 ,  H03H9/706 ,  H03H9/72 ,  H03H9/725 ,  H01L2924/00014 ,  H01L2924/00

    摘要： [PROBLEM ] To provide a laminate ceramic electronic device applicable to two types of design specifications by using a common package. [SOLUTION A laminate ceramic electronic device of the present invention has filter chips 2, 3 for transmission and reception mounted therein. A wiring pattern 7, which connects an input terminal A of the transmission filter chip 2 with a transmission side signal terminal Tx in a first arrangement, has two branch wiring portions 72, 73 extending from the transmission side signal terminal Tx toward the input terminal A of the transmission filter chip 2 in the first arrangement and toward an output terminal D of the reception filter chip 3 in a second arrangement. A wiring pattern 8, which connects the output terminal D of the reception filter chip 3 with a reception side signal terminal Rx in the first arrangement, has two branch wiring portions 82, 83 extending from the reception side signal terminal Rx toward the output terminal D of the reception filter chip 3 in the first arrangement and toward the input terminal A of the transmission filter chip 2 in the second arrangement.

    摘要翻译： [问题]通过使用通用包装提供适用于两种设计规格的层压陶瓷电子设备。 [解决方案]本发明的层叠陶瓷电子器件具有安装在其中的用于发送和接收的滤波器芯片2,3。 将发送滤波器芯片2的输入端子A与第一配置的发送侧信号端子Tx连接的布线图案7具有从发送侧信号端子Tx朝向输入端子A延伸的两个支路布线部72,73 的第一布置中的发送滤波器芯片2，并且在第二布置中朝向接收滤波器芯片3的输出端子D。 将接收滤波器芯片3的输出端D与第一配置中的接收侧信号端子Rx连接的布线图案8具有从接收侧信号端子Rx朝向输出端子D延伸的两个分支布线部82,83 的第一布置中的接收滤波器芯片3，并且在第二布置中朝向发送滤波器芯片2的输入端子A.

    Manufacturing method of semiconductor device
    18.
    发明申请
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US20060068538A1

    公开(公告)日：2006-03-30

    申请号：US11233648

    申请日：2005-09-23

    申请人： Takashi Ogura

    发明人： Takashi Ogura

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L29/66681 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4925 ,  H01L29/7816

    摘要： A method of manufacturing a semiconductor device comprises the following steps: a step of depositing a silicon oxide film on the top surface of an epitaxial layer of the region where a high withstand voltage MOS transistor is formed; a step of subsequently depositing a silicon oxide film on the top surface of the epitaxial layer according to the thickness of a gate oxide film of a low withstand voltage MOS transistor; and a step of subsequently adjusting the thickness of the silicon oxide film on the top surface of the high withstand voltage MOS transistor by etching and forming a P-type diffusion layer by ion-implantation method. This method can manufacture elements having gate oxide films different in thickness at low cost.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在形成高耐压MOS晶体管的区域的外延层的顶表面上沉积氧化硅膜的步骤; 随后根据低耐压MOS晶体管的栅极氧化膜的厚度在外延层的顶表面上沉积氧化硅膜的步骤; 以及通过蚀刻并通过离子注入法形成P型扩散层，随后调整高耐压MOS晶体管的顶表面上的氧化硅膜的厚度的步骤。 该方法可以以低成本制造具有不同厚度的栅极氧化膜的元件。

    Package for light emitting element and process for fabricating same
    19.
    发明申请
    Package for light emitting element and process for fabricating same 审中-公开
    发光元件用封装及其制造方法

    公开(公告)号：US20050141396A1

    公开(公告)日：2005-06-30

    申请号：US11019615

    申请日：2004-12-23

    申请人： Masanori Hongo ,  Masami Fukuyama ,  Takashi Ogura

    发明人： Masanori Hongo ,  Masami Fukuyama ,  Takashi Ogura

    IPC分类号： G11B11/00 ,  H01L33/48 ,  H01L33/62

    CPC分类号： H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15174 ,  H01L2924/00014

    摘要： The present invention provides a package for light emitting element having a base substrate and a frame body mounted on an upper surface of the base substrate to form a cavity for housing a light emitting element therein. The frame body has an inner peripheral surface formed with a first reflecting layer. Furthermore, the base substrate has an upper surface formed with a pair of land layers for mounting the light emitting element thereon. One of the land layers has an outer peripheral portion connected to a lower end portion of the reflecting layer. The other land layer includes an exposure portion exposed on the upper surface of the base substrate, and a buried portion buried inside the base substrate. Further, the base substrate has a second reflecting layer formed below an area exposed on the bottom surface of the cavity.

    摘要翻译： 本发明提供了一种用于发光元件的封装，其具有基底基板和安装在基底基板的上表面上的框体，以形成用于将发光元件容纳在其中的空腔。 框体具有形成有第一反射层的内周面。 此外，基底基板具有形成有用于将发光元件安装在其上的一对接地层的上表面。 一个接地层具有连接到反射层的下端部的外周部。 另一个地面层包括暴露在基底基板的上表面上的曝光部分和埋在基底内的掩埋部分。 此外，基底基板具有形成在暴露在空腔的底表面上的区域下方的第二反射层。

    Antenna duplexer
    20.
    发明申请
    Antenna duplexer 有权
    天线双工器

    公开(公告)号：US20050116789A1

    公开(公告)日：2005-06-02

    申请号：US10992642

    申请日：2004-11-22

    申请人： Masanori Hongo ,  Natsuyo Nagano ,  Takashi Ogura ,  Hideki Ito ,  Toshio Tanuma

    发明人： Masanori Hongo ,  Natsuyo Nagano ,  Takashi Ogura ,  Hideki Ito ,  Toshio Tanuma

    IPC分类号： H03H9/72 ,  H01P1/213 ,  H03H9/25

    CPC分类号： H01P1/213

    摘要： The present invention provides an antenna duplexer comprising a transmitting filter and a receiving filter which are mounted on a package, a transmitting signal input pad and a transmitting signal output pad which are connected to input and output ends of the transmitting filter, a receiving signal input pad and a receiving signal output pad which are connected to input and output ends of the receiving filter, and at least one grounding pad. The pads are arranged, on a surface of the package, along at least two sides of four sides of a quadrangle. The transmitting signal input pad and the receiving signal output pad are disposed at diagonal positions of the quadrangle and are furthest away from one another.

    摘要翻译： 本发明提供了一种天线双工器，其包括安装在封装上的发射滤波器和接收滤波器，发射信号输入焊盘和发射信号输出焊盘，其连接到发射滤波器的输入和输出端，接收信号输入 焊盘和接收信号输出焊盘，其连接到接收滤波器的输入和输出端，以及至少一个接地焊盘。 垫片在包装的表面上沿着四边形的四边的至少两侧布置。 发射信号输入焊盘和接收信号输出焊盘设置在四边形的对角位置处并且彼此最远。