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公开(公告)号：US20070090342A1
公开(公告)日：2007-04-26
申请号：US11329937
申请日：2006-01-11
IPC分类号： H01L39/22
CPC分类号： H01L39/2461
摘要： A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3 and then a layer of CeO2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
摘要翻译： 公开了一种分层制造方法及其制造方法。 衬底具有双轴织构化的MgO晶体层，其c轴相对于沉积在衬底上的衬底的平面倾斜。 将一层YSZ或Y 2 O 3 3，然后一层CeO 2 2沉积在MgO上。 将其c轴垂直于衬底的平面的结晶超导体层沉积在CeO 2层上。 通过在阿贡国家实验室开发的倾斜衬底沉积方法将MgO层沉积在衬底上。 优选地，MgO的c轴相对于衬底的法线在约10°至约40°的范围内倾斜并且使用YBCO超导体。
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公开(公告)号：US09908817B2
公开(公告)日：2018-03-06
申请号：US13528544
申请日：2012-06-20
IPC分类号： C04B35/00 , C04B35/491 , C04B35/624 , C23C26/00 , C23C28/04 , C23C28/00 , H01G4/12
CPC分类号： C04B35/491 , C04B35/624 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3296 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/768 , C23C26/00 , C23C28/04 , C23C28/30 , H01G4/1218 , H01G4/1245 , Y02T10/7022
摘要： The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.
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公开(公告)号：US09359223B2
公开(公告)日：2016-06-07
申请号：US13237487
申请日：2011-09-20
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译： 本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。 还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。
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公开(公告)号：US08647737B2
公开(公告)日：2014-02-11
申请号：US13250926
申请日：2011-09-30
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译： 本发明提供了一种在基板上形成无裂纹电介质膜的方法。 该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加到基底上。 沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。 重复沉积，热预处理，预溶解，热解和结晶，直到介电膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。 还提供了在基板上的厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹的电介质，其整体电介质厚度为约1.5μm至约20.0μm。
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公开(公告)号：US09646766B2
公开(公告)日：2017-05-09
申请号：US13523335
申请日：2012-06-14
CPC分类号： H01G4/008 , H01G4/10 , H01G4/12 , H01G4/1209 , H01G4/30 , Y10T29/435
摘要： The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
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16.发明申请METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH 有权制造具有增强的介电断裂强度的电介质电容器的方法公开(公告)号：US20130335882A1
公开(公告)日：2013-12-19
申请号：US13523335
申请日：2012-06-14
CPC分类号： H01G4/008 , H01G4/10 , H01G4/12 , H01G4/1209 , H01G4/30 , Y10T29/435
摘要： The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
摘要翻译： 本发明涉及一种用于制造介电陶瓷膜电容器和由其形成的陶瓷介电层压电容器的方法，所述介电陶瓷膜电容器具有增加的介电击穿强度。 本发明通过在电容器的电介质层内的电极层之间嵌入导电氧化物层来增加击穿强度。 导电氧化物层重新分布和耗散电荷，从而通过电场减轻电介质中形成的电荷浓度和微裂纹。
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公开(公告)号：US07560291B2
公开(公告)日：2009-07-14
申请号：US11329937
申请日：2006-01-11
IPC分类号： H01L39/12
CPC分类号： H01L39/2461
摘要： A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3 and then a layer of CeO2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
摘要翻译： 公开了一种分层制造方法及其制造方法。 衬底具有双轴织构化的MgO晶体层，其c轴相对于沉积在衬底上的衬底的平面倾斜。 在MgO上沉积一层或多层YSZ或Y2O3，然后沉积一层CeO 2。 将其c轴垂直于衬底平面的结晶超导体层沉积在CeO 2层上。 通过在阿贡国家实验室开发的倾斜衬底沉积方法将MgO层沉积在衬底上。 优选地，MgO的c轴相对于衬底的法线在约10°至约40°的范围内倾斜并且使用YBCO超导体。
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公开(公告)号：US07012275B2
公开(公告)日：2006-03-14
申请号：US10780451
申请日：2004-02-17
IPC分类号： H01L39/12
CPC分类号： H01L39/2461
摘要： A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3 and then a layer of CeO2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
摘要翻译： 公开了一种分层制造方法及其制造方法。 衬底具有双轴织构化的MgO晶体层，其c轴相对于沉积在衬底上的衬底的平面倾斜。 将一层YSZ或Y 2 O 3 3，然后一层CeO 2 2沉积在MgO上。 将其c轴垂直于衬底的平面的结晶超导体层沉积在CeO 2层上。 通过在阿贡国家实验室开发的倾斜衬底沉积方法将MgO层沉积在衬底上。 优选地，MgO的c轴相对于衬底的法线在约10°至约40°的范围内倾斜并且使用YBCO超导体。
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公开(公告)号：US20050181953A1
公开(公告)日：2005-08-18
申请号：US10780451
申请日：2004-02-17
CPC分类号： H01L39/2461
摘要： A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3 and then a layer of CeO2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
摘要翻译： 公开了一种分层制造方法及其制造方法。 衬底具有双轴织构化的MgO晶体层，其c轴相对于沉积在衬底上的衬底的平面倾斜。 将一层YSZ或Y 2 O 3 3，然后一层CeO 2 2沉积在MgO上。 将其c轴垂直于衬底的平面的结晶超导体层沉积在CeO 2层上。 通过在阿贡国家实验室开发的倾斜衬底沉积方法将MgO层沉积在衬底上。 优选地，MgO的c轴相对于衬底的法线在约10°至约40°的范围内倾斜并且使用YBCO超导体。
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20.发明申请Layered structure of Cu-containing superconductor and Ag or Ag alloys with Cu 审中-公开含Cu超导体和Ag或Ag合金与Cu的分层结构公开(公告)号：US20050048329A1
公开(公告)日：2005-03-03
申请号：US10648052
申请日：2003-08-26
IPC分类号： B32B9/00
CPC分类号： H01L39/2458
摘要： A layered composition of a Cu-containing ceramic superconductor layer and a Ag-containing layer having between about 0.1 and about 0.3 atom percent Cu. The ceramic superconductor may be in contact with the Ag-containing copper doped layer which may be one or more of a substrate, a stabilizer or a sheath. Oxide superconductors are preferred.
摘要翻译： 含Cu陶瓷超导体层和含有Cu的层的组成为约0.1至约0.3原子％Cu。 陶瓷超导体可以与含Ag的铜掺杂层接触，其可以是衬底，稳定器或护套中的一种或多种。 氧化物超导体是优选的。
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