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11.发明授权公开(公告)号：US07375367B2
公开(公告)日：2008-05-20
申请号：US10974348
申请日：2004-10-27
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/3407 , H01S5/34333 , H01S2304/00
摘要： A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
摘要翻译： 在氮化物材料系统中制造的半导体发光器件具有设置在衬底上的有源区域。 有源区包括形成有源区的最下层的第一含铝层，形成有源区的最上层的第二含铝层和设置在第一含铝层之间的至少一个InGaN量子阱层 和第二含铝层。 含铝层在有源区域中提供改进的载流子限制，因此增加了器件的输出光功率。
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公开(公告)号：US07569862B2
公开(公告)日：2009-08-04
申请号：US11030791
申请日：2005-01-07
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , H01L33/007 , H01S5/0213 , H01S5/2215 , H01S5/2224 , H01S5/2275 , H01S5/32341 , H01S2301/173
摘要： A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminum-containing cladding region or an aluminum-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5). The or each exposed portion of the aluminum-containing cladding region or the aluminum-containing optical guiding region (5) is then oxidized to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).
摘要翻译： 一种制造半导体发光器件的方法包括选择性地蚀刻在氮化物材料体系中制造并包括含铝包层区域或含铝光导区域（5）的半导体层结构（16）。 蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。 然后将含铝包覆区域或含铝光导区域（5）的暴露部分或每个暴露部分氧化，以形成横向邻近并从台面横向延伸的电流阻挡层（18）。 当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。
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公开(公告)号：US07276391B2
公开(公告)日：2007-10-02
申请号：US10974226
申请日：2004-10-27
IPC分类号： H01L21/477
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/06 , H01S5/0213 , H01S5/34333 , H01S2304/00 , H01S2304/02
摘要： A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.
摘要翻译： 一种制造半导体发光器件的有源区的方法，其中有源区包括多个势垒层（11,13,15,17），其中每对势垒层被量子阱层（12 ，14,16）包括分别对每个阻挡层（11,13,15,17）进行退火。 一旦其已经生长，并且在层在阻挡层上生长之后，每个阻挡层（11,13,15,17）被退火。 通过本发明的方法生长的器件具有比通过具有单一退火步骤的常规制造工艺制造的器件显着更高的光功率输出。
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公开(公告)号：US07867799B2
公开(公告)日：2011-01-11
申请号：US10974207
申请日：2004-10-27
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02631 , H01S2304/02
摘要： A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.
摘要翻译： （Al，Ga，In）N材料系统中制造连续波半导体激光二极管的方法包括：依次生长第一包层区域（4），第一光导区域（5），有源区域 6），第二光导区域（7）和第二包层区域（8）。 第一包层区域（4），第一导光区域（5），有源区域（6），第二光导区域（7）和第二包层区域（8）中的每一个通过分子束外延沉积。
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公开(公告)号：US07648577B2
公开(公告)日：2010-01-19
申请号：US10536706
申请日：2003-11-27
IPC分类号： C30B25/14
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminum is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm−3, without the need for any post-growth step of activating the dopant atoms.
摘要翻译： 通过分子束外延（MBE）生长p型氮化物半导体材料的方法使用双（环戊二烯基）镁（Cp2Mg）作为镁掺杂剂原子的源。 使用氨气作为MBE生长过程的氮前体。 为了生长p型GaN，例如，通过本发明的方法，将镓，氨和Cp2Mg供给至MBE生长室; 为了生长p型AlGaN，另外向生长室供给铝。 本发明的生长方法通过室温霍尔效应测量产生高达2×1017cm-3的p型载流子浓度，而不需要任何激活掺杂剂原子的后期生长步骤。
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公开(公告)号：US20100265976A1
公开(公告)日：2010-10-21
申请号：US12741217
申请日：2008-10-21
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02631 , H01S5/221 , H01S5/2216 , H01S5/2231 , H01S5/32341
摘要： A III-nitride compound device which has a layer of AlInN (7) having a non-zero In content, for example acting as a current blocking layer, is described. The layer of AlInN (7) has at least aperture defined therein. The layer of AlInN (7) is grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 102 ohm·cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having smaller resistivity. As a consequence, when the AlInN layer has an opening and is placed in a laser diode device, the resistance of the device is lower resulting in a device with better performance.
摘要翻译： 描述了具有例如用作电流阻挡层的非零In含量的AlInN（7）层的III族氮化物复合器件。 AlInN（7）的层至少具有限定在其中的孔。 AlInN（7）的层与下层（例如下面的GaN层）以较小的晶格失配生长，从而防止在器件中增加晶体应变。 通过使用优化的生长条件，使AlInN的电阻率高于102欧姆·厘米，从而防止在具有较小电阻率层的多层半导体器件中用作电流阻挡层时的电流流动。 结果，当AlInN层具有开口并且放置在激光二极管器件中时，器件的电阻较低，导致具有更好性能的器件。
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公开(公告)号：US07504321B2
公开(公告)日：2009-03-17
申请号：US10525406
申请日：2003-08-18
申请人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Katherine L. Johnson , Jonathan Heffernan
发明人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Katherine L. Johnson , Jonathan Heffernan
IPC分类号： H01L21/00
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminum to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminum mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminum is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminum enables a second (Al,Ga)N layer, having a different aluminum mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.
摘要翻译： 通过分子束外延生长AlGaN半导体层结构的方法包括向生长室供应氨，镓和铝，从而通过MBE在设置在生长室中的衬底上生长第一（Al，Ga）N层。 第一（Al，Ga）N层具有非零的铝摩尔分数。 以至少1×10 -4 mbar的光束当量压力供应氨，以至少1×10 -8 mbar的光束当量压力供应镓，并以至少1×10 -8 mbar的光束当量压力供应铝 在成长过程中。 一旦生长了第一（Al，Ga）N层，则改变镓和/或铝的供应速率使得能够形成具有与第一（Al，Ga）N不同的铝摩尔分数的第二（Al，Ga）N层 层由MBE在第一（Al，Ga）N层上生长。 可以重复该过程以生长（Al，Ga）N多层结构。
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18.发明授权Semiconductor light-emitting device, and a method of manufacture of a semiconductor device 有权半导体发光器件，以及半导体器件的制造方法公开(公告)号：US07417258B2
公开(公告)日：2008-08-26
申请号：US11380440
申请日：2006-04-27
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L33/0095 , H01L33/025 , H01S5/2004 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the InxGa1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6×1013cm−2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the InxGa1-xN layer.
摘要翻译： 一种制造氮化物半导体器件的方法包括以下步骤：生长In 1 x 1 Ga 1-x N（0 <= x <= 1）层，并生长 含铝氮化物半导体层，在至少500℃的生长温度下在In 1 x 1 Ga 1-x N层上形成电子气区域 在In 1 x 1 Ga 1-x N层和氮化物半导体层之间的界面。 然后将氮化物半导体层在至少800℃的温度下退火。本发明的方法可以提供具有6×10 13 cm -2的薄片载体密度的电子气体， SUP>或更大。 具有如此高的片状载流子浓度的电子气体可以用具有相对较低的铝浓度的铝含量的氮化物半导体层，例如0.3或更低的铝摩尔分数，并且不需要掺杂含铝氮化物 半导体层或In 1 x 1 Ga 1-x N层。
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公开(公告)号：US07629237B2
公开(公告)日：2009-12-08
申请号：US10525499
申请日：2003-08-18
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second-substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17).
摘要翻译： 半导体层结构的MBE生长的方法包括使用氨作为氮前体，在第一衬底温度（T1）的衬底上生长第一（Al，Ga）N层（步骤13）。 然后将衬底冷却（步骤14）至低于第一衬底温度的第二衬底温度（T2）。 然后通过使用氨作为氮前体的MBE在第一（Al，Ga）N层上生长（In，Ga）N量子阱结构（步骤15）。 在第一生长步骤，冷却步骤和第二生长步骤期间，向基材供应氨持续保持。 在（In，Ga）N量子阱结构的生长完成之后，衬底可以被加热到大于第二衬底温度（T2）的第三温度（T3）。 然后在（In，Ga）N量子阱结构上生长第二（Al，Ga）N层（步骤17）。
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公开(公告)号：US07358112B2
公开(公告)日：2008-04-15
申请号：US10480203
申请日：2002-06-13
IPC分类号： H01L21/00
CPC分类号： H01L21/02579 , C30B23/02 , C30B29/40 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02631 , Y10S438/933
摘要： A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a p-type nitride semiconductor material over the substrate. Magnesium is supplied to the growth chamber at a beam equivalent pressure of at least 1 10-9 mbar, and preferably in the range from 1 10-9 mbar to 1 10-7 mbar during the growth process. This provides p-type GaN that has a high concentration of free charge carriers and eliminates the need to activate the magnesium dopant atoms by annealing or irradiating the material.
摘要翻译： 通过分子束外延（MBE）生长具有镁作为p型掺杂剂的p型氮化物半导体材料的方法包括向含有衬底的MBE生长室供给氨气，镓和镁，以生长p型氮化物半导体材料， 氮化物半导体材料。 在生长过程中，以至少1×10 -9毫巴的束当量压力，优选在1×10 -9毫巴至1×10-7毫巴的范围内向生长室供应镁。 这提供了具有高浓度的自由电荷载流子的p型GaN，并且不需要通过退火或照射材料来激活镁掺杂剂原子。
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