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公开(公告)号：US07504321B2
公开(公告)日：2009-03-17
申请号：US10525406
申请日：2003-08-18
申请人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Katherine L. Johnson , Jonathan Heffernan
发明人： Valerie Bousquet , Stewart Edward Hooper , Jennifer Mary Barnes , Katherine L. Johnson , Jonathan Heffernan
IPC分类号： H01L21/00
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminum to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminum mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminum is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminum enables a second (Al,Ga)N layer, having a different aluminum mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.
摘要翻译： 通过分子束外延生长AlGaN半导体层结构的方法包括向生长室供应氨，镓和铝，从而通过MBE在设置在生长室中的衬底上生长第一（Al，Ga）N层。 第一（Al，Ga）N层具有非零的铝摩尔分数。 以至少1×10 -4 mbar的光束当量压力供应氨，以至少1×10 -8 mbar的光束当量压力供应镓，并以至少1×10 -8 mbar的光束当量压力供应铝 在成长过程中。 一旦生长了第一（Al，Ga）N层，则改变镓和/或铝的供应速率使得能够形成具有与第一（Al，Ga）N不同的铝摩尔分数的第二（Al，Ga）N层 层由MBE在第一（Al，Ga）N层上生长。 可以重复该过程以生长（Al，Ga）N多层结构。
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公开(公告)号：US07629237B2
公开(公告)日：2009-12-08
申请号：US10525499
申请日：2003-08-18
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second-substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17).
摘要翻译： 半导体层结构的MBE生长的方法包括使用氨作为氮前体，在第一衬底温度（T1）的衬底上生长第一（Al，Ga）N层（步骤13）。 然后将衬底冷却（步骤14）至低于第一衬底温度的第二衬底温度（T2）。 然后通过使用氨作为氮前体的MBE在第一（Al，Ga）N层上生长（In，Ga）N量子阱结构（步骤15）。 在第一生长步骤，冷却步骤和第二生长步骤期间，向基材供应氨持续保持。 在（In，Ga）N量子阱结构的生长完成之后，衬底可以被加热到大于第二衬底温度（T2）的第三温度（T3）。 然后在（In，Ga）N量子阱结构上生长第二（Al，Ga）N层（步骤17）。
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公开(公告)号：US07358112B2
公开(公告)日：2008-04-15
申请号：US10480203
申请日：2002-06-13
IPC分类号： H01L21/00
CPC分类号： H01L21/02579 , C30B23/02 , C30B29/40 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02631 , Y10S438/933
摘要： A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a p-type nitride semiconductor material over the substrate. Magnesium is supplied to the growth chamber at a beam equivalent pressure of at least 1 10-9 mbar, and preferably in the range from 1 10-9 mbar to 1 10-7 mbar during the growth process. This provides p-type GaN that has a high concentration of free charge carriers and eliminates the need to activate the magnesium dopant atoms by annealing or irradiating the material.
摘要翻译： 通过分子束外延（MBE）生长具有镁作为p型掺杂剂的p型氮化物半导体材料的方法包括向含有衬底的MBE生长室供给氨气，镓和镁，以生长p型氮化物半导体材料， 氮化物半导体材料。 在生长过程中，以至少1×10 -9毫巴的束当量压力，优选在1×10 -9毫巴至1×10-7毫巴的范围内向生长室供应镁。 这提供了具有高浓度的自由电荷载流子的p型GaN，并且不需要通过退火或照射材料来激活镁掺杂剂原子。
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公开(公告)号：US07115167B2
公开(公告)日：2006-10-03
申请号：US10079269
申请日：2002-02-19
IPC分类号： C30B25/04
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： The invention provides a method of growing an (In, Ga)N multiplayer structure by molecular beam epitaxy. Each GaN or InGaN layer in the multilayer structure is grown at a substrate temperature of at least 650° C., and this provides improved material quality. Ammonia gas is used as the source of nitrogen for the growth process. Ammonia and gallium are supplied to the growth chamber at substantially constant rates, and the supply rate of indium to the growth chamber is varied to select the desired composition for the layer being grown. This allows the structure to be grown at a substantially constant growth rate. The substrate temperature is preferably kept constant during the growth process, to avoid the need to interrupt the growth process to vary the substrate temperature between the growth of one layer and the growth of another layer.
摘要翻译： 本发明提供通过分子束外延生长（In，Ga）N多层结构的方法。 多层结构中的每个GaN或InGaN层在至少650℃的衬底温度下生长，这提供了改进的材料质量。 氨气用作生长过程的氮源。 氨和镓以基本恒定的速率供应到生长室，并且改变生长室的铟的供应速率以选择所生长层的期望组成。 这允许以基本上恒定的生长速率生长结构。 衬底温度优选在生长过程中保持恒定，以避免需要中断生长过程以改变一层生长和另一层生长之间的衬底温度。
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公开(公告)号：US06500258B2
公开(公告)日：2002-12-31
申请号：US09884881
申请日：2001-06-18
IPC分类号： C30B2302
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： This invention relates to a method of growing a nitride semiconductor layer by molecular beam epitaxy comprising the steps of: a) heating a GaN substrate (S) disposed in a growth chamber (10) to a substrate temperature of at least 850° C.; and b) growing a nitride semiconductor layer on the GaN substrate by molecular beam epitaxy at a substrate temperature of at least 850° C., ammonia gas being supplied to the growth chamber (10) during the growth of the nitride semiconductor layer; wherein the method comprises the further step of commencing the supply ammonia gas to the growth chamber during step (a), before the substrate temperature has reached 800° C.
摘要翻译： 本发明涉及通过分子束外延生长氮化物半导体层的方法，包括以下步骤：a）将设置在生长室（10）中的GaN衬底（S）加热至至少850℃的衬底温度; 以及b）在至少850℃的衬底温度下通过分子束外延在GaN衬底上生长氮化物半导体层，在氮化物半导体层的生长期间向生长室（10）供应氨气; 其中所述方法包括在基板温度达到800℃之前，在步骤（a）期间开始向生长室供应氨气的步骤。
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公开(公告)号：US06440214B1
公开(公告)日：2002-08-27
申请号：US09591119
申请日：2000-06-09
IPC分类号： C30B2938
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631
摘要： A method of growing a nitride semiconductor layer, such as a GaN layer, by molecular beam epitaxy comprises the step of growing a GaAlN nucleation layer on a substrate by molecular beam epitaxy. The nucleation layer is annealed, and a nitride semiconductor layer is then grown over the nucleation layer by molecular beam epitaxy. The nitride semiconductor layer is grown at a V/III molar ratio of 100 or greater, and this enables a high substrate temperature to be used so that a good quality semiconductor layer is obtained. Ammonia gas is supplied during the growth process, to provide the nitrogen required for the MBE growth process.
摘要翻译： 通过分子束外延生长诸如GaN层的氮化物半导体层的方法包括通过分子束外延在衬底上生长GaAlN成核层的步骤。 退火成核层，然后通过分子束外延在成核层上生长氮化物半导体层。 氮化物半导体层以V / III摩尔比为100以上生长，能够使用高的衬底温度，从而获得良好的质量的半导体层。 在生长过程中供应氨气，以提供MBE生长过程所需的氮。
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7.发明授权Semiconductor light-emitting device, and a method of manufacture of a semiconductor device 有权半导体发光器件，以及半导体器件的制造方法公开(公告)号：US07417258B2
公开(公告)日：2008-08-26
申请号：US11380440
申请日：2006-04-27
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L33/0095 , H01L33/025 , H01S5/2004 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the InxGa1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6×1013cm−2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the InxGa1-xN layer.
摘要翻译： 一种制造氮化物半导体器件的方法包括以下步骤：生长In 1 x 1 Ga 1-x N（0 <= x <= 1）层，并生长 含铝氮化物半导体层，在至少500℃的生长温度下在In 1 x 1 Ga 1-x N层上形成电子气区域 在In 1 x 1 Ga 1-x N层和氮化物半导体层之间的界面。 然后将氮化物半导体层在至少800℃的温度下退火。本发明的方法可以提供具有6×10 13 cm -2的薄片载体密度的电子气体， SUP>或更大。 具有如此高的片状载流子浓度的电子气体可以用具有相对较低的铝浓度的铝含量的氮化物半导体层，例如0.3或更低的铝摩尔分数，并且不需要掺杂含铝氮化物 半导体层或In 1 x 1 Ga 1-x N层。
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公开(公告)号：US07951694B2
公开(公告)日：2011-05-31
申请号：US12200188
申请日：2008-08-28
IPC分类号： H01L21/20
CPC分类号： H01L21/02461 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B33/02 , H01L21/02381 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L29/2003
摘要： A method of manufacturing a nitride semiconductor structure includes disposing a semiconductor substrate in a molecular beam epitaxy reactor; growing a wetting layer comprising AlxInyGa(1−(x+y))As(0≦x+y≦1) or AlxInyGa(1−(x+y))P(0≦x+y≦1) on the substrate; in-situ annealing the wetting layer; growing a first AlGaInN layer on the wetting layer using plasma activated nitrogen as the source of nitrogen with an additional flux of phosphorous or arsenic; and growing a second AlGaInN layer on the first AlGaInN layer using ammonia as a source of nitrogen.
摘要翻译： 制造氮化物半导体结构的方法包括将半导体衬底设置在分子束外延反应器中; 在衬底上生长包含Al x In y Ga（1-（x + y））As（0＆amp; nE; x + y＆nlE; 1）或Al x In y Ga（1-（x + y））P（0和nlE; x + y和nlE; 1） 原位退火润湿层; 使用等离子体活化氮作为氮源，再加入磷或砷的助熔剂，在润湿层上生长第一AlGaInN层; 以及使用氨作为氮源在所述第一AlGaInN层上生长第二AlGaInN层。
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公开(公告)号：US08900489B2
公开(公告)日：2014-12-02
申请号：US13188713
申请日：2011-07-22
IPC分类号： H01B1/02 , C09K11/62 , H01L31/032
CPC分类号： H01L33/06 , C01B21/0615 , C01B21/0632 , C01B21/072 , C09K11/623 , H01L31/032 , H01L33/26 , Y02E10/549 , Y10S977/773
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译： 本申请提供了氮化物半导体纳米颗粒，例如纳米晶体，其由II-III-N型新型化合物半导体族的新组合物形成，例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN， ZnAlInN和ZnAlGaInN。 这种类型的化合物半导体纳米晶体在现有技术中不是先前已知的。 本发明还公开了作为II-III-N族半导体纳米晶体的亚组的II-N半导体纳米晶体，例如ZnN纳米晶体。 可以控制新型和新型II-III-N化合物半导体纳米晶体的组成和尺寸，以便调整其带隙和发光性能。 证明了紫外 - 可见红外波长范围内的高效发光。 本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。
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公开(公告)号：US20120025146A1
公开(公告)日：2012-02-02
申请号：US13188713
申请日：2011-07-22
CPC分类号： H01L33/06 , C01B21/0615 , C01B21/0632 , C01B21/072 , C09K11/623 , H01L31/032 , H01L33/26 , Y02E10/549 , Y10S977/773
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals.The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译： 本申请提供了氮化物半导体纳米颗粒，例如纳米晶体，其由II-III-N型新型化合物半导体族的新组合物形成，例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN， ZnAlInN和ZnAlGaInN。 这种类型的化合物半导体纳米晶体在现有技术中不是先前已知的。 本发明还公开了作为II-III-N族半导体纳米晶体的亚组的II-N半导体纳米晶体，例如ZnN纳米晶体。 可以控制新型和新型II-III-N化合物半导体纳米晶体的组成和尺寸，以便调整其带隙和发光性能。 证明了紫外 - 可见红外波长范围内的高效发光。 本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。
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