公开(公告)号：US20140264375A1

公开(公告)日：2014-09-18

申请号：US13831449

申请日：2013-03-14

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L29/16

CPC classification number: H01L29/1602 ,  H01L29/267 ,  H01L29/66242 ,  H01L29/7371 ,  H01L29/861 ,  H01L33/04

Abstract: Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.

Abstract translation: 提供包括晶格失配的单晶半导体材料和制造异质结结构的方法的半导体异质结结构。 异质结结构包括至少一个三层结，其包含两层单晶半导体和夹在两层单晶半导体材料之间并分离两层单晶半导体材料的电流隧穿层。 还提供了结合异质结结构的器件，制造器件的方法和使用器件的方法。

公开(公告)号：US20190356114A1

公开(公告)日：2019-11-21

申请号：US15982252

申请日：2018-05-17

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Munho Kim ,  Jung-Hun Seo ,  Sang June Cho

IPC: H01S5/22 ,  H01S5/34

Abstract: Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.

公开(公告)号：US20180182911A1

公开(公告)日：2018-06-28

申请号：US15865662

申请日：2018-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Kanglin Xiong ,  Hongyi Mi ,  Tzu-Hsuan Chang ,  Shaoqin Gong ,  Jung-Hun Seo

IPC: H01L31/0693

CPC classification number: H01L31/0693 ,  Y02E10/544 ,  Y02P70/521

Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.

公开(公告)号：US09850594B2

公开(公告)日：2017-12-26

申请号：US15381652

申请日：2016-12-16

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: C30B31/02 ,  C30B33/02 ,  C30B29/04 ,  H01L21/324 ,  H01L21/04 ,  H01L29/16 ,  H01L29/861 ,  H01L29/66

CPC classification number: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L21/041 ,  H01L21/324 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/861

Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

公开(公告)号：US09704999B2

公开(公告)日：2017-07-11

申请号：US14664119

申请日：2015-03-20

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L21/304

CPC classification number: H01L29/78618 ,  H01L21/304 ,  H01L29/0653 ,  H01L29/66522 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78696

Abstract: Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors include a trench cut into the layer of semiconductor that makes up the body of the transistors. Trench separates the source and drain regions and determines the channel length of the transistor.

公开(公告)号：US20170098715A1

公开(公告)日：2017-04-06

申请号：US14664119

申请日：2015-03-20

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/304 ,  H01L29/06

CPC classification number: H01L29/78618 ,  H01L21/304 ,  H01L29/0653 ,  H01L29/66522 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78696

Abstract: Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors include a trench cut into the layer of semiconductor that makes up the body of the transistors. Trench separates the source and drain regions and determines the channel length of the transistor.

公开(公告)号：US09605359B2

公开(公告)日：2017-03-28

申请号：US14508187

申请日：2014-10-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L29/16 ,  H01L21/324 ,  H01L21/04

CPC classification number: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L21/041 ,  H01L21/324 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/861

Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

公开(公告)号：US09425351B2

公开(公告)日：2016-08-23

申请号：US14506975

申请日：2014-10-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/28 ,  H01L27/15 ,  H01L31/0328 ,  H01L21/283

CPC classification number: H01L33/06 ,  H01L21/283 ,  H01L27/156 ,  H01L31/0328 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/04 ,  H01L33/28 ,  H01L33/32 ,  H01S5/105 ,  H01S5/18369 ,  H01S5/20 ,  H01S5/3095

Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.

Abstract translation: 提供了具有多量子阱（MQW）pin二极管结构的发光器件以及制造和使用器件的方法。 器件由多层半导体异质结构组成。 这些器件包括一种或多种材料的界面层，其允许在本征有源区和p型和/或n型掺杂电荷注入层之间的界面处的电流隧穿通过晶格失配的异质结。

公开(公告)号：US20160097145A1

公开(公告)日：2016-04-07

申请号：US14508187

申请日：2014-10-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: C30B31/02 ,  H01L21/324 ,  H01L29/16 ,  H01L21/04 ,  C30B29/04 ,  C30B33/02

CPC classification number: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L21/041 ,  H01L21/324 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/861

Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

Abstract translation: 提供硼掺杂金刚石及其制造方法。 在低温热扩散掺杂工艺中，使用重硼掺杂硅的超薄膜作为掺杂剂携载材料制造掺杂金刚石。

公开(公告)号：US09006785B2

公开(公告)日：2015-04-14

申请号：US13751477

申请日：2013-01-28

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo ,  Max G. Lagally

IPC: H01L31/072 ,  H01L29/32 ,  H01L29/786

CPC classification number: H01L29/32 ,  H01L29/66742 ,  H01L29/7849 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78687 ,  H01L29/78696

Abstract: Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer structures and methods for fabricating the trilayer structures and transistors. The trilayer structures comprise a first layer of single-crystalline semiconductor material, a second layer of single-crystalline semiconductor material and a third layer of single-crystalline semiconductor material. In the structures, the second layer is in contact with and sandwiched between the first and third layers and the first layer is selectively doped to provide one or more doped regions in the layer.

Abstract translation: 提供掺杂和应变的半导体三层结构。 还提供了机械灵活的晶体管，包括射频晶体管，结合三层结构和制造三层结构和晶体管的方法。 三层结构包括第一层单晶半导体材料，第二层单晶半导体材料和第三层单晶半导体材料。 在结构中，第二层与第一和第三层接触并夹在第一和第三层之间，并且第一层被选择性地掺杂以在该层中提供一个或多个掺杂区域。