公开(公告)号：US20050167693A1

公开(公告)日：2005-08-04

申请号：US11095854

申请日：2005-03-30

Applicant: Werner Goetz ,  Michael Camras ,  Changhua Chen ,  Xiaoping Chen ,  Gina Christenson ,  R. Kern ,  Chihping Kuo ,  Paul Martin ,  Daniel Steigerwald

Inventor： Werner Goetz ,  Michael Camras ,  Changhua Chen ,  Xiaoping Chen ,  Gina Christenson ,  R. Kern ,  Chihping Kuo ,  Paul Martin ,  Daniel Steigerwald

IPC: H01S5/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L21/00 ,  H01L33/00

CPC classification number: H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Abstract translation: GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属接触之间形成电阻率大于或等于约7Ωcm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

公开(公告)号：US06630692B2

公开(公告)日：2003-10-07

申请号：US09870330

申请日：2001-05-29

Applicant: Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

Inventor： Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

IPC: H01L3300

CPC classification number: H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.

Abstract translation: 提供了具有改进性能的III-氮化物发光二极管。 在一个实施例中，发光器件包括衬底，设置在衬底上的成核层，设置在成核层上方的缺陷减少结构，以及设置在缺陷还原结构之上的n型III-氮化物半导体层。 n型层例如具有大于约1微米的厚度和大于或等于约10厘米-3的硅掺杂剂浓度。 在另一个实施例中，发光器件包括III-氮化物半导体有源区，其包括均匀地掺杂有杂质或掺杂有在基本上垂直于有源区的方向上分级的浓度的杂质的至少一个势垒层。

公开(公告)号：US08474675B2

公开(公告)日：2013-07-02

申请号：US12727214

申请日：2010-03-18

Applicant: Bernd Haehnel ,  Werner Goetz ,  Roland Benz

Inventor： Bernd Haehnel ,  Werner Goetz ,  Roland Benz

IPC: B65H23/038

CPC classification number: B65H23/038 ,  B65H2403/52

Abstract: A device for automatically controlling the edges of a web of sheeting has a first deflecting roller and a second deflecting roller, which are arranged parallel to each other, and also a drive for shifting the deflecting rollers in opposite axial directions. A sensor detects the position of the sheeting. The drive shifts the deflecting rollers in opposite axial directions and the ratio between the friction of the sheeting on the first deflecting roller and the friction of the sheeting on the second deflecting roller is changed on the basis of the position of the sheeting detected by the sensor.

Abstract translation: 用于自动控制片材幅材的边缘的装置具有彼此平行布置的第一偏转辊和第二偏转辊，以及用于使偏转辊沿相反的轴向移动的驱动器。 传感器检测片材的位置。 驱动器使偏转辊沿相反的轴向移动，并且基于由传感器检测到的片材的位置来改变第一偏转辊上的片材的摩擦和第二偏转辊上的片材的摩擦之间的比率 。

公开(公告)号：US20100011739A1

公开(公告)日：2010-01-21

申请号：US11719944

申请日：2005-11-12

Applicant: Werner Goetz ,  Oliver Schmidt

Inventor： Werner Goetz ,  Oliver Schmidt

IPC: F02C7/12 ,  F01N5/02

CPC classification number: F02C7/16 ,  F05D2260/205 ,  F05D2260/232 ,  F05D2260/60 ,  Y02T50/675

Abstract: A device and method for drawing off and recirculating cooling streams, specifically for drawing off and recirculating a cooling stream of fuel for cooling at least one aircraft engine accessory, is disclosed. The device having a tubular jacket part defining a flow cross-section through which a primary stream, specifically a fuel stream, flows by way of an extraction pipe which is positioned approximately in the center of the flow cross-section, or jacket part, in order to draw off a cooling stream from the primary stream, by way of a hollow strut extending in the radial direction to divert this cooling stream from the device with the aid of the extraction pipe and to supply it to at least one accessory to be cooled, and by way of a return opening to recirculate the cooling stream directed through the accessory for cooling purposes to the primary stream.

Abstract translation: 公开了一种用于抽出和循环冷却流的装置和方法，特别是用于抽出和再循环用于冷却至少一个飞机发动机附件的燃料的冷却流。 该装置具有限定流动截面的管状套管部分，主流体，特别是燃料流通过该流动横截面大致位于流动横截面的中心或抽出部分中的抽吸管流动， 通过在径向方向上延伸的中空支柱从主流中排出冷却流，借助于抽出管将该冷却流从装置中转移出来，并将其提供给至少一个待冷却的附件 并且通过返回开口将引导通过附件的冷却流再循环以用于冷却目的到主流。

公开(公告)号：US06441393B2

公开(公告)日：2002-08-27

申请号：US09442590

申请日：1999-11-17

Applicant: Werner Goetz ,  R. Scott Kern

Inventor： Werner Goetz ,  R. Scott Kern

IPC: H01L2976

CPC classification number: H01L33/325 ,  H01L33/04 ,  H01L33/12 ,  H01S5/305 ,  H01S5/32341

Abstract: A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.

Abstract translation: 提供一种半导体器件，其具有具有诸如锗（Ge），硅（Si），锡（Sn）和/或氧（O）和/或p型器件的施主掺杂剂的III-V族氮化物的n型器件层 同时或在掺杂超晶格中的具有受体掺杂剂如镁（Mg），铍（Be），锌（Zn）和/或镉（Cd）的III-V族氮化物层可以工程化应变，改善导电性，以及 提供更长的波长发光。

公开(公告)号：US06274399B1

公开(公告)日：2001-08-14

申请号：US09655752

申请日：2000-09-06

Applicant: R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

Inventor： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

IPC: H01L2120

CPC classification number: H01L33/32 ,  H01L33/12 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.

Abstract translation: 在本发明中，将界面层添加到发光二极管或激光二极管结构中以起到应变工程和杂质吸杂的作用。 可以使用掺杂有Mg，Zn，Cd的GaN或Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1）层。 或者，当使用Al x In y Ga 1-x-y N（x> 0）时，该层可以是未掺杂的。 在n型（GaN：Si）层和器件结构的其余部分生长之前，界面层直接沉积在缓冲层的顶部上。 界面层的厚度从0.01-10.0μm变化。

公开(公告)号：US06194742B1

公开(公告)日：2001-02-27

申请号：US09092478

申请日：1998-06-05

Applicant: R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

Inventor： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

IPC: H01L3300

CPC classification number: H01L33/32 ,  H01L33/12 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGal1-x-yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1-x-yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.

Abstract translation: 在本发明中，将界面层添加到发光二极管或激光二极管结构中以起到应变工程和杂质吸杂的作用。 可以使用掺杂有Mg，Zn，Cd的GaN或Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1）的层。 或者，当使用Al x In y Ga 1-x-y N（x> 0）时，该层可以是未掺杂的。 在n型（GaN：Si）层和器件结构的其余部分生长之前，界面层直接沉积在缓冲层的顶部上。 界面层的厚度从0.01-10.0μm变化。

公开(公告)号：US6090300A

公开(公告)日：2000-07-18

申请号：US84223

申请日：1998-05-26

Applicant: Jack Walker ,  Werner Goetz ,  Noble M. Johnson ,  David P. Bour ,  Thomas L. Paoli

Inventor： Jack Walker ,  Werner Goetz ,  Noble M. Johnson ,  David P. Bour ,  Thomas L. Paoli

IPC: H01L33/00 ,  H01S5/20 ,  H01S5/323 ,  H01L21/3115 ,  B44C1/22

CPC classification number: H01L33/007 ,  H01S5/2081 ,  H01S5/32341

Abstract: A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.

Abstract translation: 蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。 蚀刻深度由注入离子的能量，质量和剂量控制。

公开(公告)号：US4605188A

公开(公告)日：1986-08-12

申请号：US642678

申请日：1984-08-15

Applicant: Werner Goetz

Inventor： Werner Goetz

IPC: F16M11/04 ,  F16M11/28 ,  H04N5/64 ,  F16M11/00

CPC classification number: F16M11/08 ,  F16M11/046 ,  Y10S248/92 ,  Y10S248/921

Abstract: Apparatus for mounting a computer terminal or word processor so that it can be vertically adjusted and/or angularly adjusted comprising an upper cap piece into which the terminal is received and which has a threaded stud mounted therein and a lower base member with a second threaded stud mounted therein and with a central adjustment member mounted between the upper cap piece and the lower base piece and threadedly connected to the upper cap piece and the lower base piece such that when the adjustment member is rotated a first threaded portion engages the threaded stud of the upper cap member and a second thread on the adjustment member engages the second threaded stud of the lower base member and wherein the threads on the adjustment member are of opposite direction to each other such that when the adjustment member is manually rotated a telescope vertical displacement of the cap member relative to the base member occurs due to turning of the central adjustment member with an external gripping surface. An antitwist means is provided between the cap member and the base member to prevent twisting and the terminal is pivoted and twisted by means of a carrier plate which is shaped like a spherical cap which forms the lower portion of the computer terminal housing and which rests on a collar portion of the cap member and can be releasably moved with the terminal with a guiding member.

Abstract translation: PCT No.PCT / DE84 / 00029 Sec。 371日期1984年8月15日 102（e）日期1984年8月15日PCT提交1984年2月3日PCT公布。 公开号WO84 / 03134 日期1984年8月16日。用于安装计算机终端或文字处理器以使其可以被垂直调整和/或角度调整的装置，包括端子被容纳在其中的上盖件和安装在其中的螺柱，下部 其具有安装在其中的第二螺柱，并且具有安装在上盖件和下基件之间的中心调节件，并且螺纹连接到上盖件和下基件，使得当调节件旋转时，第一螺纹 部分接合上盖构件的螺柱并且调节构件上的第二螺纹接合下基部构件的第二螺柱，并且其中调节构件上的螺纹彼此相反，使得当调节构件为 手动旋转望远镜盖部件相对于基座部件的垂直位移由于中央调节部件的转动而发生 r具有外部抓握表面。 在盖构件和基座构件之间设置防止装置以防止扭转，并且端子通过形成为形成计算机终端壳体的下部的球形帽的托板枢转并扭转 帽构件的凸缘部分并且可以通过端子与引导构件可释放地移动。