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    Semiconductor devices with selectively doped III-V nitride layers
    1.
    发明授权
    Semiconductor devices with selectively doped III-V nitride layers 有权
    具有选择性掺杂III-V族氮化物层的半导体器件

    公开(公告)号：US06441393B2

    公开(公告)日：2002-08-27

    申请号：US09442590

    申请日：1999-11-17

    Applicant: Werner Goetz ,  R. Scott Kern

    Inventor： Werner Goetz ,  R. Scott Kern

    IPC: H01L2976

    CPC classification number: H01L33/325 ,  H01L33/04 ,  H01L33/12 ,  H01S5/305 ,  H01S5/32341

    Abstract: A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.

    Abstract translation: 提供一种半导体器件，其具有具有诸如锗（Ge），硅（Si），锡（Sn）和/或氧（O）和/或p型器件的施主掺杂剂的III-V族氮化物的n型器件层 同时或在掺杂超晶格中的具有受体掺杂剂如镁（Mg），铍（Be），锌（Zn）和/或镉（Cd）的III-V族氮化物层可以工程化应变，改善导电性，以及 提供更长的波长发光。

    Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
    2.
    发明授权
    Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices 有权
    III-V族氮化物半导体膜和光电子器件的应变工程和杂质控制方法

    公开(公告)号：US06274399B1

    公开(公告)日：2001-08-14

    申请号：US09655752

    申请日：2000-09-06

    Applicant: R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    Inventor： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    IPC: H01L2120

    CPC classification number: H01L33/32 ,  H01L33/12 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

    Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.

    Abstract translation: 在本发明中，将界面层添加到发光二极管或激光二极管结构中以起到应变工程和杂质吸杂的作用。 可以使用掺杂有Mg，Zn，Cd的GaN或Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1）层。 或者，当使用Al x In y Ga 1-x-y N（x> 0）时，该层可以是未掺杂的。 在n型（GaN：Si）层和器件结构的其余部分生长之前，界面层直接沉积在缓冲层的顶部上。 界面层的厚度从0.01-10.0μm变化。

    Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
    3.
    发明授权
    Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices 失效
    应变设计和杂质控制的III-V氮化物半导体膜和光电子器件

    公开(公告)号：US06194742B1

    公开(公告)日：2001-02-27

    申请号：US09092478

    申请日：1998-06-05

    Applicant: R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    Inventor： R. Scott Kern ,  Changhua Chen ,  Werner Goetz ,  Chihping Kuo

    IPC: H01L3300

    CPC classification number: H01L33/32 ,  H01L33/12 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

    Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGal1-x-yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1-x-yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.

    Abstract translation: 在本发明中，将界面层添加到发光二极管或激光二极管结构中以起到应变工程和杂质吸杂的作用。 可以使用掺杂有Mg，Zn，Cd的GaN或Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1）的层。 或者，当使用Al x In y Ga 1-x-y N（x> 0）时，该层可以是未掺杂的。 在n型（GaN：Si）层和器件结构的其余部分生长之前，界面层直接沉积在缓冲层的顶部上。 界面层的厚度从0.01-10.0μm变化。

    DEVICE FOR AUTOMATICALLY CONTROLLING THE EDGES OF A WEB OF SHEETING
    4.
    发明申请
    DEVICE FOR AUTOMATICALLY CONTROLLING THE EDGES OF A WEB OF SHEETING 有权
    用于自动控制网络边缘的设备

    公开(公告)号：US20100249985A1

    公开(公告)日：2010-09-30

    申请号：US12727214

    申请日：2010-03-18

    Applicant: BERND HAEHNEL ,  Werner Goetz ,  Roland Benz

    Inventor： BERND HAEHNEL ,  Werner Goetz ,  Roland Benz

    IPC: G06F7/00 ,  B65H23/038

    CPC classification number: B65H23/038 ,  B65H2403/52

    Abstract: A device for automatically controlling the edges of a web of sheeting has a first deflecting roller and a second deflecting roller, which are arranged parallel to each other, and also a drive for shifting the deflecting rollers in opposite axial directions. A sensor detects the position of the sheeting. The drive shifts the deflecting rollers in opposite axial directions and the ratio between the friction of the sheeting on the first deflecting roller and the friction of the sheeting on the second deflecting roller is changed on the basis of the position of the sheeting detected by the sensor.

    Abstract translation: 用于自动控制片材幅材的边缘的装置具有彼此平行布置的第一偏转辊和第二偏转辊，以及用于使偏转辊沿相反的轴向移动的驱动器。 传感器检测片材的位置。 驱动器使偏转辊沿相反的轴向移动，并且基于由传感器检测到的片材的位置来改变第一偏转辊上的片材的摩擦和第二偏转辊上的片材的摩擦之间的比率 。

    P-Type Layer For A III-Nitride Light Emitting Device
    5.
    发明申请
    P-Type Layer For A III-Nitride Light Emitting Device 失效
    III型氮化物发光器件的P型层

    公开(公告)号：US20070262342A1

    公开(公告)日：2007-11-15

    申请号：US11383456

    申请日：2006-05-15

    Applicant: Junko Kobayashi ,  Werner Goetz ,  Anneli Munkholm

    Inventor： Junko Kobayashi ,  Werner Goetz ,  Anneli Munkholm

    IPC: H01L33/00

    CPC classification number: H01L33/305 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/382

    Abstract: A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.

    Abstract translation: 半导体结构包括发光区域，设置在发光区域的第一侧上的p型区域和设置在发光区域的第二侧上的n型区域。 发光区域的第一侧的半导体结构的厚度的至少10％包括铟。 可以通过生长n型区域，生长p型区域以及生长设置在n型区域和p型区域之间的发光层来形成这种半导体发光器件的一些示例。 n型区域的一部分的生长温度与p型区域的一部分的生长温度之间的温度差为至少140℃。

    STRAIN-CONTROLLED III-NITRIDE LIGHT EMITTING DEVICE
    8.
    发明申请
    STRAIN-CONTROLLED III-NITRIDE LIGHT EMITTING DEVICE 有权
    应变控制的III-NITRIDE发光装置

    公开(公告)号：US20050236641A1

    公开(公告)日：2005-10-27

    申请号：US10830202

    申请日：2004-04-21

    Applicant: Werner Goetz ,  Michael Krames ,  Anneli Munkholm

    Inventor： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

    IPC: H01L33/08 ,  H01L33/32 ,  H01L29/22

    CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/12

    Abstract: In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

    Abstract translation: 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。

    Strain-controlled III-nitride light emitting device
    9.
    发明申请
    Strain-controlled III-nitride light emitting device 审中-公开

    公开(公告)号：US20060011937A1

    公开(公告)日：2006-01-19

    申请号：US11227814

    申请日：2005-09-14

    Applicant: Werner Goetz ,  Michael Krames ,  Anneli Munkholm

    Inventor： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

    IPC: H01L21/00 ,  H01L33/00

    CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20

    Abstract: In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

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