利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.015 秒)

    Data storage system having multi-bit memory device and operating method thereof
    11.
    发明授权
    Data storage system having multi-bit memory device and operating method thereof 有权
    具有多位存储装置的数据存储系统及其操作方法

    公开(公告)号：US08976587B2

    公开(公告)日：2015-03-10

    申请号：US13737140

    申请日：2013-01-09

    申请人： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

    发明人： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

    IPC分类号： G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/26 ,  G11C14/00

    CPC分类号： G11C16/10 ,  G11C11/56 ,  G11C11/5628 ,  G11C14/0018 ,  G11C16/0483 ,  G11C16/26 ,  G11C2211/5641 ,  G11C2211/5642 ,  G11C2211/5643

    摘要： The operating method of a data storage device includes storing data in a buffer memory according to an external request, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of a memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to a multi-bit memory device based on the determined program pattern.

    摘要翻译： 数据存储装置的操作方法包括根据外部请求将数据存储在缓冲存储器中，并且确定存储在缓冲存储器中的数据是否是伴随存储器单元阵列的缓冲器程序操作的数据。 当存储在缓冲存储器中的数据是与缓冲器程序操作相关的数据时，该方法还包括确定是否需要对存储单元阵列的主程序操作，以及当需要存储单元阵列的主程序操作时， 存储单元阵列中的主程序操作的程序模式。 该方法还包括基于所确定的程序模式向存储器单元阵列发出用于主程序操作的一组命令到多位存储器件。

    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
    12.
    发明申请
    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
    具有E.S.C.反馈控制的双偏压等离子体反应器 电压使用晶圆电压测量在偏置电源输出

    公开(公告)号：US20060256499A1

    公开(公告)日：2006-11-16

    申请号：US11127036

    申请日：2005-05-10

    申请人： Jang Yang ,  Daniel Hoffman ,  Steven Shannon ,  Douglas Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    发明人： Jang Yang ,  Daniel Hoffman ,  Steven Shannon ,  Douglas Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    IPC分类号： H01T23/00

    CPC分类号： H01J37/32706 ,  H01J37/32935 ,  H01L21/6833 ,  Y10T279/23

    摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.

    摘要翻译： 等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径 电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。 反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和 测量电压和测量电流的第二频率分量分别乘以第三和第四系数。 处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压 并乘以所选系数。

    THREE-DIMENSIONAL ULTRASONIC SCANNER
    13.
    发明申请
    THREE-DIMENSIONAL ULTRASONIC SCANNER 有权
    三维超声波扫描仪

    公开(公告)号：US20120123269A1

    公开(公告)日：2012-05-17

    申请号：US13386131

    申请日：2010-07-23

    申请人： Yongrae Roh ,  Susung Lee ,  Hyungkeun Lee ,  Jeongdong Woo ,  Wonseok Lee ,  Hoyoung Lee ,  Eunhee Shin

    发明人： Yongrae Roh ,  Susung Lee ,  Hyungkeun Lee ,  Jeongdong Woo ,  Wonseok Lee ,  Hoyoung Lee ,  Eunhee Shin

    IPC分类号： A61B8/00

    CPC分类号： A61B8/00 ,  A61B8/4461 ,  A61B8/483

    摘要： The present disclosure provides a precise performance three-dimensional ultrasound scanner that is lightweight for an easy hold by suggesting a novel constitution of a swing mechanism wherein an arrangement of the drive motor perpendicular to the swing axis requires a smaller capacity motor and eliminating a backlash. The swing mechanism includes: an arm holder connected to a rotational axis of the motor; an arm connected to the arm holder so that the arm swings within a certain angular range; a link, attached to the arm, for moving in unison with the arm; a shaft, connected to the link, for transmitting a rotary power of the arm to the transducer unit. The swing mechanism can be operated using the smaller capacity motor and eliminates the need for a pulley, gear or belt eliminating backlashes to promote implementation of lightweight precision three-dimensional ultrasound scanners.

    摘要翻译： 本公开提供了一种精确的三维超声波扫描仪，其通过提出摆动机构的新颖结构而轻便易于保持，其中垂直于摆动轴的驱动马达的布置需要较小容量的马达并消除齿隙。 摆动机构包括：与电动机的旋转轴连接的臂保持架; 臂连接到臂保持器，使得臂在一定角度范围内摆动; 连接到手臂的一个连杆，用于与手臂一致移动; 连接到所述连杆的轴，用于将所述臂的旋转动力传递到所述换能器单元。 摆动机构可以使用较小容量的电机进行操作，无需皮带轮，齿轮或皮带消除背隙，从而促进实现轻型精密三维超声波扫描仪。

    METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE
    14.
    发明申请
    METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE 审中-公开
    在基板上形成高比例特征的方法

    公开(公告)号：US20100330805A1

    公开(公告)日：2010-12-30

    申请号：US11934589

    申请日：2007-11-02

    申请人： KENNY LINH DOAN ,  Kathryn Keswick ,  Subhash Deshmukh ,  Stephan Wege ,  Wonseok Lee

    发明人： KENNY LINH DOAN ,  Kathryn Keswick ,  Subhash Deshmukh ,  Stephan Wege ,  Wonseok Lee

    IPC分类号： H01L21/768

    CPC分类号： H01L21/31116 ,  H01L21/31144

    摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios. In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture.

    摘要翻译： 提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。 本文所述的方法有利地有利于具有高纵横比的特征的轮廓和尺寸控制。 在一个实施例中，用于各向异性蚀刻衬底上的电介质层的方法包括提供具有设置在蚀刻室中的电介质层上的图案化掩模层的衬底，提供至少包含含氟和含碳气体的气体混合物和硅 氟气进入蚀刻室，并且在由气体混合物形成的等离子体的存在下蚀刻介电层中的特征。

    Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
    15.
    发明授权
    Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity 失效
    介质等离子体蚀刻工艺，具有改进的临界尺寸和蚀刻选择性的原位无定形碳掩模

    公开(公告)号：US07510976B2

    公开(公告)日：2009-03-31

    申请号：US11434951

    申请日：2006-05-16

    申请人： Shing-Li Sung ,  Wonseok Lee ,  Judy Wang ,  Shawming Ma

    发明人： Shing-Li Sung ,  Wonseok Lee ,  Judy Wang ,  Shawming Ma

    IPC分类号： H01L21/00 ,  B44C1/22

    CPC分类号： H01L21/76802 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76814

    摘要： A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch chemistries is performed in a single plasma reactor chamber. A first transition step is performed after etching the ARC by replacing the fluorine-containing process gas used in the ARC etch step with an inert species process gas. A flush step is performed after etching the ACL by replacing the hydrogen-containing process gas used in the ACL etch step with argon gas.

    摘要翻译： 在单个等离子体反应器室中执行用于连续不同层的等离子体蚀刻工艺，包括抗反射涂层（ARC），无定形碳层（ACL）和介电层以及连续不同的蚀刻化学性质。 在ARC蚀刻步骤中使用的含氟处理气体用惰性物质处理气体蚀刻ARC之后，进行第一转变步骤。 在蚀刻ACL之后，用氩气代替ACL蚀刻步骤中使用的含氢处理气体，进行冲洗步骤。

    Data storage system having multi-bit memory device and operating method thereof
    19.
    发明授权
    Data storage system having multi-bit memory device and operating method thereof 有权
    具有多位存储装置的数据存储系统及其操作方法

    公开(公告)号：US08355280B2

    公开(公告)日：2013-01-15

    申请号：US13040295

    申请日：2011-03-04

    申请人： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

    发明人： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

    IPC分类号： G11C16/04

    CPC分类号： G11C16/10 ,  G11C11/56 ,  G11C11/5628 ,  G11C14/0018 ,  G11C16/0483 ,  G11C16/26 ,  G11C2211/5641 ,  G11C2211/5642 ,  G11C2211/5643

    摘要： A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory and which controls the non-volatile memory device. The operating method of the data storage device includes storing data in the buffer memory according to an external request, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of the memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to the multi-bit memory device based on the determined program pattern.

    摘要翻译： 数据存储装置包括：非易失性存储装置，其包括存储单元阵列; 以及包括缓冲存储器并且控制非易失性存储器件的存储器控​​制器。 数据存储装置的操作方法包括根据外部请求将数据存储在缓冲存储器中，并且确定存储在缓冲存储器中的数据是否是与存储单元阵列的缓冲器程序操作相关的数据。 当存储在缓冲存储器中的数据是与缓冲器程序操作相关的数据时，该方法还包括确定是否需要对存储单元阵列的主程序操作，以及当需要存储单元阵列的主程序操作时， 存储单元阵列中的主程序操作的程序模式。 该方法还包括基于所确定的程序模式向存储器单元阵列发出用于主程序操作的一组命令给多位存储器件。

    Three-dimensional ultrasonic scanner
    20.
    发明授权
    Three-dimensional ultrasonic scanner 有权
    三维超声波扫描仪

    公开(公告)号：US08777861B2

    公开(公告)日：2014-07-15

    申请号：US13386131

    申请日：2010-07-23

    申请人： Yongrae Roh ,  Susung Lee ,  Hyungkeun Lee ,  Jeongdong Woo ,  Wonseok Lee ,  Hoyoung Lee ,  Eunhee Shin

    发明人： Yongrae Roh ,  Susung Lee ,  Hyungkeun Lee ,  Jeongdong Woo ,  Wonseok Lee ,  Hoyoung Lee ,  Eunhee Shin

    IPC分类号： A61B8/14

    CPC分类号： A61B8/00 ,  A61B8/4461 ,  A61B8/483

    摘要： The present disclosure provides a precise performance three-dimensional ultrasound scanner that is lightweight for an easy hold by suggesting a novel constitution of a swing mechanism wherein an arrangement of the drive motor perpendicular to the swing axis requires a smaller capacity motor and eliminating a backlash. The swing mechanism includes: an arm holder connected to a rotational axis of the motor; an arm connected to the arm holder so that the arm swings within a certain angular range; a link, attached to the arm, for moving in unison with the arm; a shaft, connected to the link, for transmitting a rotary power of the arm to the transducer unit. The swing mechanism can be operated using the smaller capacity motor and eliminates the need for a pulley, gear or belt eliminating backlashes to promote implementation of lightweight precision three-dimensional ultrasound scanners.

    摘要翻译： 本公开提供了一种精确的三维超声波扫描仪，其通过提出摆动机构的新颖结构而轻便易于保持，其中垂直于摆动轴的驱动马达的布置需要较小容量的马达并消除齿隙。 摆动机构包括：与电动机的旋转轴连接的臂保持架; 臂连接到臂保持器，使得臂在一定角度范围内摆动; 连接到手臂的一个连杆，用于与手臂一致移动; 连接到所述连杆的轴，用于将所述臂的旋转动力传递到所述换能器单元。 摆动机构可以使用较小容量的电机进行操作，无需皮带轮，齿轮或皮带消除背隙，从而促进实现轻型精密三维超声波扫描仪。