公开(公告)号：US08299642B2

公开(公告)日：2012-10-30

申请号：US12702922

申请日：2010-02-09

申请人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai ,  Kazuhiro Imaie

发明人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai ,  Kazuhiro Imaie

IPC分类号： H02H7/06

CPC分类号： H02P9/105

摘要： A wind power generation system includes an excessive current consumption device, an AC input of which is connected between a generator rotor and an excitation converter on a system failure to detect a DC voltage ascent of the excitation converter and operate a shunt circuit on the system failure.

摘要翻译： 风力发电系统包括过电流消耗装置，其交流输入连接在发电机转子和励磁转换器之间，系统未能检测到激励转换器的直流电压上升并在系统故障时操作分流电路 。

公开(公告)号：US20110095327A1

公开(公告)日：2011-04-28

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US20100025684A1

公开(公告)日：2010-02-04

申请号：US12515157

申请日：2007-12-19

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the method including: a substrate processing step of forming, on the (0001) C-plane of the substrate (101), a plurality of convex parts (12) of surfaces (12c) not parallel to the C-plane, to thereby form, on the substrate, an upper surface (10) that is composed of the convex parts (12) and a flat surface (11) of the C-plane; and an epitaxial step of epitaxially growing the group III nitride semiconductor layer (103) on the upper surface (10), to thereby embed the convex parts (12) in the group III nitride semiconductor layer (103).

摘要翻译： 本发明是一种在基板（101）上形成单晶III族氮化物半导体层（103）的III族氮化物半导体层的制造方法，该方法包括：基板处理工序，在（ 0001），基板（101）的C面，与C面不平行的多个表面（12c）的凸部（12），由此在基板上形成上表面（10），所述上表面 的凸起部分（12）和所述C平面的平坦表面（11）; 以及在所述上表面（10）上外延生长所述III族氮化物半导体层（103）的外延步骤，从而将所述凸部（12）嵌入所述III族氮化物半导体层（103）中。

公开(公告)号：US06490182B2

公开(公告)日：2002-12-03

申请号：US09972981

申请日：2001-10-10

申请人： Shuji Katoh ,  Hiromitsu Sakai ,  Shigeta Ueda ,  Tomomichi Ito ,  Hidetoshi Aizawa

发明人： Shuji Katoh ,  Hiromitsu Sakai ,  Shigeta Ueda ,  Tomomichi Ito ,  Hidetoshi Aizawa

IPC分类号： H02H7122

CPC分类号： H03K17/0828 ,  H02M1/32 ,  H02M7/5387 ,  H02M2001/0048 ,  H03K17/168 ,  Y02B70/1491

摘要： A semiconductor electric power converter in accordance with the present invention comprises an arm consisting of an IGBT, a capacitor connected between a collector and a gate of said IGBT, and a gate circuit connected to the gate of said IGBT for controlling the switching operation of said IGBT, wherein a plurality of said arms connected in series are connected in parallel and each midpoint of said arms connected in of series is connected to a load. Thereby the impedance between the gate terminal of the IGBT and the gate circuit is decreased when the gate voltage is higher than the gate voltage command value or the impedance between the gate and the emitter of the IGBT is decreased when the collector voltage is high so that an electric charge stored in the gate is rapidly discharged.

摘要翻译： 根据本发明的半导体电力转换器包括由IGBT组成的臂，连接在所述IGBT的集电极和栅极之间的电容器，以及连接到所述IGBT的栅极的栅极电路，用于控制所述IGBT的开关操作 IGBT，其中串联连接的多个所述臂并联连接，并且串联连接的所述臂的每个中点连接到负载。 因此，当栅极电压高于栅极电压指令值时，IGBT的栅极端子与栅极电路之间的阻抗降低，或者当集电极电压高时IGBT的栅极和发射极之间的阻抗降低，从而 存储在门中的电荷被快速排出。

公开(公告)号：US5439424A

公开(公告)日：1995-08-08

申请号：US205362

申请日：1994-03-03

申请人： Makoto Sawada ,  Hiromitsu Sakai ,  Nobuaki Mochizuki

发明人： Makoto Sawada ,  Hiromitsu Sakai ,  Nobuaki Mochizuki

IPC分类号： F16H9/00 ,  F16H61/10 ,  F16H61/662 ,  B60K41/12

CPC分类号： F16H61/66259 ,  Y10T477/6242 ,  Y10T477/62427

摘要： A CVT control system comprises a controller. The controller determines the desired engine speed as a first function of operator power demand and vehicle speed during a predetermined period involving a momenet when a control element moves off from one of the maximum and minimum reduction ratio command positions, and determines the desired engine speed as a second function of the operator power demand and the vehicle speed during the subsequent period to the predetermined period.

摘要翻译： CVT控制系统包括控制器。 当控制元件从最大和最小减速比指令位置之一移开时，控制器将期望的发动机速度确定为在涉及现场的预定时段期间的操作者功率需求和车辆速度的第一功能，并且将期望的发动机速度确定为 操作者电力需求的第二功能和在随后的时间段内的车辆速度到预定时段。

公开(公告)号：US08309982B2

公开(公告)日：2012-11-13

申请号：US12999726

申请日：2009-06-11

申请人： Kenzo Hanawa ,  Hiromitsu Sakai ,  Yasumasa Sasaki

发明人： Kenzo Hanawa ,  Hiromitsu Sakai ,  Yasumasa Sasaki

IPC分类号： H01L33/32

CPC分类号： H01L21/0242 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.

摘要翻译： 提供了具有高水平的结晶度和优异的内部量子效率并且能够获得高等级发光输出的III-III族氮化物半导体发光器件及其制造方法和灯。 将由III族氮化物类化合物构成的AlN种子层层压在基板11上，在该AlN种子层上依次层叠n层半导体层，发光层和p层 分别由III族氮化物半导体构成的半导体层，其中p型半导体层16的（0002）面的X射线摇摆曲线的半峰全宽为60弧度以下， （10-10）面的X射线摇摆曲线半峰的全宽为250弧秒以下。

公开(公告)号：US08129851B2

公开(公告)日：2012-03-06

申请号：US12131225

申请日：2008-06-02

申请人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai ,  Kojiro Yamashita

发明人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai ,  Kojiro Yamashita

IPC分类号： H02H7/06

CPC分类号： H02J3/386 ,  F03D9/255 ,  F03D15/10 ,  F05B2270/1071 ,  H02J2003/388 ,  H02P9/102 ,  H02P2101/15 ,  Y02E10/72 ,  Y02E10/763

摘要： In a wind power generation system, an energy consuming unit is connected to a DC part of a generator-side converter. A shunt circuit is connected between the generator-side converter and a rotor of an AC-excited power generator. In the event of system failure, the switching operation of the converter is stopped, the shunt circuit is put into operation, and the energy consuming unit is put into operation so that DC voltage (voltage of the DC part) is maintained within a prescribed range.

摘要翻译： 在风力发电系统中，能量消耗单元与发电机侧变流器的直流部连接。 在发电机侧转换器和交流励磁发电机的转子之间连接有分流电路。 在系统故障的情况下，转换器的切换动作停止，并联电路投入运行，能量消耗部投入运行，直流电压（直流部）的电压维持在规定范围内 。

公开(公告)号：US20090200803A1

公开(公告)日：2009-08-13

申请号：US12366668

申请日：2009-02-06

申请人： Masaya ICHINOSE ,  Motoo Futami ,  Hiromitsu Sakai

发明人： Masaya ICHINOSE ,  Motoo Futami ,  Hiromitsu Sakai

IPC分类号： H02P9/04 ,  H02P9/10

CPC分类号： H02P29/032 ,  F03D9/255 ,  F05B2270/10711 ,  H02J3/18 ,  H02J3/386 ,  H02P9/007 ,  H02P9/10 ,  H02P2101/15 ,  Y02E10/72 ,  Y02E10/763 ,  Y02E40/30

摘要： In a wind power generation system, an AC input of a unit for coping with system faults is connected to an excitation converter and a DC port of the unit for coping with system faults is connected to a DC port of a converter through resistors. A plurality of energy consumptive circuits each constructed of a resistor and switching units are provided for the DC port of the unit for coping with system faults.

摘要翻译： 在风力发电系统中，用于应对系统故障的单元的交流输入连接到励磁转换器，并且用于处理系统故障的单元的DC端口通过电阻器连接到转换器的DC端口。 为了应对系统故障，为单元的DC端口提供了各自由电阻器和开关单元构成的多个能量消耗电路。

公开(公告)号：US07355296B2

公开(公告)日：2008-04-08

申请号：US11679759

申请日：2007-02-27

申请人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai

发明人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai

IPC分类号： H02P9/00 ,  H02P9/47

CPC分类号： H02P9/007 ,  F03D7/026 ,  F03D9/255 ,  F05B2270/337 ,  H02P9/10 ,  H02P2101/15 ,  Y02E10/723 ,  Y10T307/735

摘要： To shorten a startup interval to reach a synchronizing condition, a phase difference and an amplitude difference between the grid voltage and the stator voltage of one phase of a winding are obtained. The difference in amplitude is decreased prior to or in parallel to synchronizing the stator voltage with the grid voltage. The calculated compensation phase compensation value is used as an initial value for synchronizing at the next synchronizing operation.

公开(公告)号：US20070126009A1

公开(公告)日：2007-06-07

申请号：US10575625

申请日：2004-10-13

申请人： Hiromitsu Sakai ,  Mineo Okuyama

发明人： Hiromitsu Sakai ,  Mineo Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L31/184 ,  H01L33/007 ,  H01L33/12 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED). The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Alx1Ga1-x1N (0≦x1≦0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of Alx2Ga1-x2N (0

摘要翻译： 本发明的目的是提供一种III族氮化物半导体元件，其包括具有高结晶度且不含裂纹的厚AlGaN层，并且不包括厚的GaN层（其通常用作光吸收层 紫外线LED）。 本发明的III族氮化物半导体元件包括基底; 由AlN构成的第一氮化物半导体层，其设置在基板上; 由设置在第一氮化物半导体层上的由Al x 1 Ga 1-x1 N（0 <= x1 <= 0.1）组成的第二氮化物半导体层; 以及由在第二氮化物上提供的Al x2 Ga 1-x2 N（0