公开(公告)号：US08309982B2

公开(公告)日：2012-11-13

申请号：US12999726

申请日：2009-06-11

申请人： Kenzo Hanawa ,  Hiromitsu Sakai ,  Yasumasa Sasaki

发明人： Kenzo Hanawa ,  Hiromitsu Sakai ,  Yasumasa Sasaki

IPC分类号： H01L33/32

CPC分类号： H01L21/0242 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.

摘要翻译： 提供了具有高水平的结晶度和优异的内部量子效率并且能够获得高等级发光输出的III-III族氮化物半导体发光器件及其制造方法和灯。 将由III族氮化物类化合物构成的AlN种子层层压在基板11上，在该AlN种子层上依次层叠n层半导体层，发光层和p层 分别由III族氮化物半导体构成的半导体层，其中p型半导体层16的（0002）面的X射线摇摆曲线的半峰全宽为60弧度以下， （10-10）面的X射线摇摆曲线半峰的全宽为250弧秒以下。

公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

公开(公告)号：US08148712B2

公开(公告)日：2012-04-03

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/06

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

公开(公告)号：US20110095331A1

公开(公告)日：2011-04-28

申请号：US12999726

申请日：2009-06-11

申请人： Kenzo Hanawa ,  Hiromitsu Sakai ,  Yasumasa Sasaki

发明人： Kenzo Hanawa ,  Hiromitsu Sakai ,  Yasumasa Sasaki

IPC分类号： H01L33/32

CPC分类号： H01L21/0242 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride based compound is laminated on a substrate 11, and on this AlN seed layer, there are sequentially laminated each layer of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively composed of a group-III nitride semiconductor, wherein the full width at half-maximum of the X-ray rocking curve of the (0002) plane of the p-type semiconductor layer 16 is 60 arcsec or less, and the full width at half-maximum of the X-ray rocking curve of the (10-10) plane is 250 arcsec or less.

摘要翻译： 提供了具有高水平的结晶度和优异的内部量子效率并且能够获得高等级发光输出的III-III族氮化物半导体发光器件及其制造方法和灯。 将由III族氮化物类化合物构成的AlN种子层层压在基板11上，在该AlN种子层上依次层叠n层半导体层，发光层和p层 分别由III族氮化物半导体构成的半导体层，其中，p型半导体层16的（0002）面的X射线摇摆曲线的半峰全宽为60弧度以下， （10-10）面的X射线摇摆曲线半峰的全宽为250弧秒以下。

公开(公告)号：US08772060B2

公开(公告)日：2014-07-08

申请号：US13119127

申请日：2009-09-14

申请人： Hiromitsu Sakai ,  Takeshi Harada

发明人： Hiromitsu Sakai ,  Takeshi Harada

IPC分类号： H01L33/30 ,  H01L33/36 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02573 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.

摘要翻译： 本发明提供一种制造III族氮化物半导体发光元件的方法，可以在基板上形成各层的同时抑制翘曲，可以形成包括具有优异结晶性的发光层的半导体层，并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法，其中中间层，下层，n型接触层，n型包覆层，发光层，p型包覆层 和p型接触层依次层叠在基板的主平面上，其中直径为4英寸（100mm）以上的基板，其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; （0002）面的X射线摇摆曲线半峰全宽（FWHM）为100弧秒以下，（10-10）面的X射线摇摆曲线FWHM为300arcsec以下，处于 其中中间层已经形成在衬底上，然后在中间层上形成底层和n型接触层; 此外，在n型接触层上形成n型包覆层，发光层，p型覆层和p型接触层。

公开(公告)号：US08421107B2

公开(公告)日：2013-04-16

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US08299642B2

公开(公告)日：2012-10-30

申请号：US12702922

申请日：2010-02-09

申请人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai ,  Kazuhiro Imaie

发明人： Masaya Ichinose ,  Motoo Futami ,  Hiromitsu Sakai ,  Kazuhiro Imaie

IPC分类号： H02H7/06

CPC分类号： H02P9/105

摘要： A wind power generation system includes an excessive current consumption device, an AC input of which is connected between a generator rotor and an excitation converter on a system failure to detect a DC voltage ascent of the excitation converter and operate a shunt circuit on the system failure.

摘要翻译： 风力发电系统包括过电流消耗装置，其交流输入连接在发电机转子和励磁转换器之间，系统未能检测到激励转换器的直流电压上升并在系统故障时操作分流电路 。

公开(公告)号：US20110095327A1

公开(公告)日：2011-04-28

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5

公开(公告)号：US07855386B2

公开(公告)日：2010-12-21

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US20100025684A1

公开(公告)日：2010-02-04

申请号：US12515157

申请日：2007-12-19

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the method including: a substrate processing step of forming, on the (0001) C-plane of the substrate (101), a plurality of convex parts (12) of surfaces (12c) not parallel to the C-plane, to thereby form, on the substrate, an upper surface (10) that is composed of the convex parts (12) and a flat surface (11) of the C-plane; and an epitaxial step of epitaxially growing the group III nitride semiconductor layer (103) on the upper surface (10), to thereby embed the convex parts (12) in the group III nitride semiconductor layer (103).

摘要翻译： 本发明是一种在基板（101）上形成单晶III族氮化物半导体层（103）的III族氮化物半导体层的制造方法，该方法包括：基板处理工序，在（ 0001），基板（101）的C面，与C面不平行的多个表面（12c）的凸部（12），由此在基板上形成上表面（10），所述上表面 的凸起部分（12）和所述C平面的平坦表面（11）; 以及在所述上表面（10）上外延生长所述III族氮化物半导体层（103）的外延步骤，从而将所述凸部（12）嵌入所述III族氮化物半导体层（103）中。