公开(公告)号：US20070132028A1

公开(公告)日：2007-06-14

申请号：US11677951

申请日：2007-02-22

申请人： Yuuichi Hirano ,  Shigeto Maegawa ,  Toshiaki Iwamatsu ,  Takuji Matsumoto ,  Shigenobu Maeda ,  Yasuo Yamaguchi

发明人： Yuuichi Hirano ,  Shigeto Maegawa ,  Toshiaki Iwamatsu ,  Takuji Matsumoto ,  Shigenobu Maeda ,  Yasuo Yamaguchi

IPC分类号： H01L27/12

CPC分类号： H01L27/1203 ,  H01L21/84

摘要： An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.

公开(公告)号：US20060267096A1

公开(公告)日：2006-11-30

申请号：US11483707

申请日：2006-07-11

申请人： Shigenobu Maeda ,  Yasuo Yamaguchi

发明人： Shigenobu Maeda ,  Yasuo Yamaguchi

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  G06F17/5068 ,  H01L21/765 ,  H01L27/0207 ,  H01L27/1203 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/78615 ,  H01L29/78654

摘要： A semiconductor device including a transistor having an SOI structure the operating speed of which is not affected is provided. A MOS transistor having the SOI structure is formed which satisfies R·C·f

摘要翻译： 提供一种半导体器件，其包括具有SOI结构的晶体管，其运行速度不受影响。 形成具有SOI结构的MOS晶体管，其满足R.C.f <1，其中C是栅极电容（F），R是体电阻（Ω），f是时钟工作频率（Hz），f> = 500MHz。

公开(公告)号：US20060055084A1

公开(公告)日：2006-03-16

申请号：US10539884

申请日：2003-12-12

申请人： Takashi Yamaguchi ,  Minobu Yamaguchi ,  Akiko Uematsu ,  Masao Yamaguchi ,  Yasuo Yamaguchi

发明人： Takashi Yamaguchi ,  Minobu Yamaguchi ,  Akiko Uematsu ,  Masao Yamaguchi ,  Yasuo Yamaguchi

IPC分类号： B29C45/14 ,  C25D11/04

CPC分类号： C25D11/18 ,  B29C33/06 ,  B29C45/14311 ,  B29C45/14778 ,  B29C45/2737 ,  B29C2045/14868 ,  B29K2705/00 ,  B29K2705/02 ,  C25D11/045 ,  Y10T428/12569 ,  Y10T428/249953 ,  Y10T428/249958

摘要： The present invention is to provide a process for producing a composite of an aluminum material and a synthetic resin molding that can be produced at a high efficiency and to provide a stable and fast composite that is large in a peel strength and a mechanical strength. The process for producing a composite according to the present invention is characterized in that an aluminum raw material is oxidized in an electrolytic bath of phosphoric acid or sodium hydride, thereby an anodic oxidation coating provided with innumerable pores 3 having a diameter of 25 nm or more made open in the surface thereof is formed thereon, and a synthetic resin mold 6 is coupled with the anodic oxidation coating 2 in such a condition that the part 6a thereof is intruded in the innumerable pores.

摘要翻译： 本发明提供一种能够高效率地制造的铝材和合成树脂成型体的复合体的制造方法，提供剥离强度和机械强度大的稳定且快速的复合体。

公开(公告)号：US07006906B2

公开(公告)日：2006-02-28

申请号：US10733449

申请日：2003-12-12

申请人： Yasuhiko Kobayashi ,  Yasuo Yamaguchi

发明人： Yasuhiko Kobayashi ,  Yasuo Yamaguchi

IPC分类号： B60L9/00 ,  B60L11/00 ,  B60K1/00

CPC分类号： B60L15/025 ,  B60L11/00 ,  B60L2220/16 ,  H02P6/08 ,  H02P21/00 ,  Y02T10/643

摘要： An electric drive control apparatus which prevents the voltage from being saturated and does not cause the driver to feel uncomfortable during driving. The electric drive control apparatus includes an electrically operated machine, an instruction value calculation processing unit that calculates an instruction value based on a target electrically operated machine torque and on the rotational speed of the electrically operated machine, an output signal calculation processing unit that calculates an output signal based on the instruction value, a current generating unit that generates a current based on the output signal and supplies the current to the electrically operated machine, a change-in-the-voltage-saturation calculation processing unit that calculates a change in the voltage saturation that varies depending upon the degree of occurrence of the voltage saturation accompanying the drive of the electrically operated machine, and a change-in-the-control-quantity correction processing unit correcting a magnetic pole position depending upon the change in the voltage saturation.

摘要翻译： 一种电驱动控制装置，其防止电压饱和，并且不会导致驾驶员在驾驶期间感到不舒服。 电驱动控制装置包括电动机器，指令值计算处理单元，其基于目标电动机械转矩和电动机器的转速来计算指令值，输出信号计算处理单元，其计算 基于指令值的输出信号;电流产生单元，其基于输出信号产生电流并将电流提供给电动机器;电压变化电压饱和度计算处理单元，其计算 电压饱和度根据伴随电动机械的驱动的电压饱和度的发生程度而变化，以及控制量校正处理单元，其根据电压饱和度的变化校正磁极位置 。

公开(公告)号：US06914307B2

公开(公告)日：2005-07-05

申请号：US10657068

申请日：2003-09-09

申请人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

发明人： Toshiaki Iwamatsu ,  Takashi Ipposhi ,  Hideki Naruoka ,  Nobuyoshi Hattori ,  Shigeto Maegawa ,  Yasuo Yamaguchi ,  Takuji Matsumoto

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/01 ,  H01L27/08 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L21/76286 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/458

摘要： A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor layer, semiconductor elements being electrically isolated from each other by the isolation film. The semiconductor device also includes a PN junction portion provided under the isolation film and formed by two semiconductor regions of different conductivity types in the semiconductor layer. The isolation film includes a nitride film provided in a position corresponding to a top of the PN junction portion and has a substantially uniform thickness across the two semiconductor regions and an upper oxide film and a lower oxide film which are provided in upper and lower portions of the nitride film. The surface of the semiconductor layer is silicidized in such a state that a surface of the isolation film is exposed.

摘要翻译： 半导体器件包括半导体层，形成在半导体层上的多个半导体元件和设置在半导体层的表面中的隔离膜，半导体元件通过隔离膜彼此电隔离。 半导体器件还包括设置在隔离膜下方并由半导体层中由不同导电类型的两个半导体区域形成的PN结部分。 隔离膜包括设置在与PN结部分的顶部相对应的位置的氮化物膜，并且在两个半导体区域上具有基本上均匀的厚度，以及设置在上部和下部的上部氧化物膜和低级氧化物膜 氮化膜。 半导体层的表面在隔离膜的表面露出的状态下被硅化。

公开(公告)号：US06888243B2

公开(公告)日：2005-05-03

申请号：US09964462

申请日：2001-09-28

申请人： Yasuo Yamaguchi

发明人： Yasuo Yamaguchi

IPC分类号： H01L21/76 ,  H01L21/3205 ,  H01L23/367 ,  H01L23/433 ,  H01L23/52 ,  H01L29/786 ,  H01L23/48

CPC分类号： H01L23/4334 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

摘要： To improve the radiation property without inhibiting miniaturization of the device, heat generated at a heat generating layer (5) is radiated to a substrate (1) via plugs (7, 17), wiring layers (8, 18), and plugs (9, 19). A cross sectional along the principal plane of the substrate (1) of the plugs (7, 9, 17, 19) is set to be a rectangle, and the long sides of the rectangle are parallel to the direction perpendicular to the direction connecting one end and the other end of the heat generating layer (5). Between the plugs (9, 19) and the semiconductor layer (2) is interposed n-type semiconductor layers (3, 13).

摘要翻译： 为了提高辐射性能而不抑制器件的小型化，在发热层（5）产生的热量通过插头（7,17），布线层（8,18）和插头（9）辐射到衬底 ，19）。 沿着插头（7,9,17,19）的基板（1）的主平面的横截面被设置为矩形，并且矩形的长边平行于与连接一个的方向垂直的方向 端部和发热层（5）的另一端。 在插头（9,19）和半导体层（2）之间插入有n型半导体层（3,13）。

公开(公告)号：US20050017588A1

公开(公告)日：2005-01-27

申请号：US10603867

申请日：2003-06-26

申请人： Yasuo Yamaguchi

发明人： Yasuo Yamaguchi

IPC分类号： H02K1/22 ,  H02K1/27 ,  H02K19/06 ,  H02K21/14 ,  H02K21/12

CPC分类号： H02K1/246 ,  B60L7/14 ,  B60L11/12 ,  B60L15/20 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2220/16 ,  B60L2220/50 ,  B60L2240/421 ,  B60L2240/423 ,  B60L2240/441 ,  B60L2270/142 ,  H02K1/276 ,  H02K19/06 ,  H02K21/14 ,  Y02T10/641 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  Y02T10/7275

摘要： A motor has a rotatably supported rotor core and permanent magnets disposed at equal intervals at a plurality of positions in a circumferential direction of the rotor core. The rotor core has projecting poles formed at equal intervals at a center between each permanent magnet. Furthermore, an opening angle center line of each projecting pole conforms to a center line of an angle created by each opening angle center line of two adjacent permanent magnets. Additionally, each projecting pole is shaped asymmetrical to a line connecting a center of the projecting pole in the rotational direction of the rotor core and an axis center of the rotor core.

摘要翻译： 电动机具有可旋转地支撑的转子芯和在转子芯的圆周方向上的多个位置处等间隔设置的永磁体。 转子芯具有在每个永磁体之间的中心处以相等间隔形成的突出极。 此外，每个突出极的开角中心线符合由两个相邻永磁体的每个开口中心线产生的角度的中心线。 此外，每个突出的杆的形状不对称地连接在转子芯的旋转方向上的突出极的中心和转子芯的轴心之间的线。

公开(公告)号：US06727552B2

公开(公告)日：2004-04-27

申请号：US10062462

申请日：2002-02-05

申请人： Yasuo Inoue ,  Tadashi Nishimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu

发明人： Yasuo Inoue ,  Tadashi Nishimura ,  Yasuo Yamaguchi ,  Toshiaki Iwamatsu

IPC分类号： H01L2701

CPC分类号： H01L21/8238 ,  H01L21/84 ,  H01L23/4825 ,  H01L27/0921 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78612 ,  H01L29/78615 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78654 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.

摘要翻译： 根据本发明的半导体器件，形成场致氧化膜以覆盖SOI层的主表面并到达掩埋氧化膜的主表面。 结果，可以完全电隔离SOI的pMOS有源区和SOI的nMOS有源区。 因此，可以完全防止闭锁。 结果，可以提供使用SOI衬底的半导体器件，该SOI衬底可以通过消除源极和漏极之间的击穿电压的降低来实现高集成度，这是常规SOI场效应晶体管的问题，以及有效地 设置妨碍高集成度的身体接触区域及其制造方法。

公开(公告)号：US06710464B2

公开(公告)日：2004-03-23

申请号：US10189586

申请日：2002-07-08

申请人： Yasuo Yamaguchi ,  Makoto Nakanishi

发明人： Yasuo Yamaguchi ,  Makoto Nakanishi

IPC分类号： H01L2348

CPC分类号： H01L24/83 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83385 ,  H01L2224/8385 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A sealing material in a plate form is placed on a frame wherein a recess is provided. A semiconductor chip and the frame are overlapped via the sealing material in a plate form within a thermostatic chamber of which the temperature is higher than the temperature at the time of the sealing of the semiconductor chip and the frame in a resin. After that, the semiconductor chip and the frame, which overlap each other, are taken out of the thermostatic chamber so as to be cooled down in the atmosphere. After that, they are sealed in a molding resin. The semiconductor chip is secured to the frame due to the differential pressure (negative pressure) between the pressure within the airtight space and atmospheric pressure. Thereby, a resin mold semiconductor device is gained wherein a semiconductor chip is secured to a frame without using a die bonding material.

摘要翻译： 将板状的密封材料放置在其中设置有凹部的框架上。 半导体芯片和框架通过密封材料以板形式重叠在恒温室内，该恒温室的温度高于半导体芯片和框架在树脂中密封时的温度。 之后，将彼此重叠的半导体芯片和框架从恒温室中取出，以便在大气中冷却。 之后，将它们密封在模塑树脂中。 由于气密空间内的压力和大气压之间的差压（负压），半导体芯片固定在框架上。 由此，获得了半导体芯片固定在框架上而不使用芯片接合材料的树脂模具半导体器件。

公开(公告)号：US06649976B2

公开(公告)日：2003-11-18

申请号：US09982777

申请日：2001-10-22

申请人： Toshiaki Iwamatsu ,  Yasuo Inoue ,  Yasuo Yamaguchi ,  Tadashi Nishimura

发明人： Toshiaki Iwamatsu ,  Yasuo Inoue ,  Yasuo Yamaguchi ,  Tadashi Nishimura

IPC分类号： H01L2976

CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41783 ,  H01L29/458 ,  H01L29/66507 ,  H01L29/66659 ,  H01L29/66772 ,  H01L29/78621

摘要： A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.