公开(公告)号：US06716479B2

公开(公告)日：2004-04-06

申请号：US10266130

申请日：2002-10-07

申请人： Yicheng Lu ,  Nuri William Emanetoglu

发明人： Yicheng Lu ,  Nuri William Emanetoglu

IPC分类号： B05D512

CPC分类号： C30B29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L41/187

摘要： The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.

摘要翻译： 本发明提供了通过使ZnO和MgO合金形成的作为新的压电材料的氧化镁锌（Mg x Zn 1-x O）。 MgxZn1-xO允许薄膜SAW和BAW器件设计的灵活性，因为其压电性能可以通过控制Mg含量以及通过使用MgxZn1-xO / ZnO多层结构来定制。 为了进行实验证明，通过金属有机化学气相沉积，MgXZn1-xO（x <= 0.35）薄膜通过在450℃-500℃范围内的温度在r面蓝宝石衬底上生长。 Mg摩尔％至0.35的MgxZn1-xO薄膜具有外延质量和纤锌矿晶体结构。 SAW特性，包括速度色散和压电耦合，其特征和结论是声速增加，而压电耦合随压电MgxZn1-xO薄膜中Mg摩尔百分数的增加而减小。

公开(公告)号：US20140027702A1

公开(公告)日：2014-01-30

申请号：US13781915

申请日：2013-03-01

申请人： Yicheng Lu ,  Yang Zhang ,  Chieh-Jen Ku

发明人： Yicheng Lu ,  Yang Zhang ,  Chieh-Jen Ku

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2481 ,  G11C2213/53 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/872 ,  H01L45/00 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616

摘要： A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

摘要翻译： 公开了一种垂直集成的可重构和可编程二极管/存储器电阻（1D1R）和衬底上的薄膜晶体管/存储电阻（1T1R）结构。

公开(公告)号：US20100266164A1

公开(公告)日：2010-10-21

申请号：US12764028

申请日：2010-04-20

申请人： Kristin Dana ,  Gabriela Livescu ,  Yicheng Lu

发明人： Kristin Dana ,  Gabriela Livescu ,  Yicheng Lu

IPC分类号： G06K9/00

CPC分类号： G07D7/121 ,  G07D7/20

摘要： A method and apparatus for creating and detecting an optically encoded document having a uniquely designed document verification indicator is disclosed. One embodiment includes applying a spatially varying Brewster angle pattern on a substrate. Another embodiment includes an apparatus for detecting the spatially varying Brewster angle pattern including a light source, a slit aperture, a polarizer, at least one parabolic mirror, and an image capturing device.

摘要翻译： 公开了一种用于创建和检测具有独特设计的文档验证指示符的光学编码文档的方法和装置。 一个实施例包括在基底上施加空间变化的布鲁斯特角图案。 另一个实施例包括用于检测包括光源，狭缝孔径，偏振器，至少一个抛物面反射镜和图像捕获装置的空间变化布鲁斯特角图案的装置。

公开(公告)号：US07400030B2

公开(公告)日：2008-07-15

申请号：US11042533

申请日：2005-01-25

申请人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong ,  Shaohua Liang

发明人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri William Emanetoglu ,  Jian Zhong ,  Shaohua Liang

IPC分类号： H01L29/04

CPC分类号： H01L31/0392 ,  H01L31/022408 ,  H01L31/108 ,  H01L31/1123 ,  Y02E10/50

摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

摘要翻译： 在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

公开(公告)号：US20070210349A1

公开(公告)日：2007-09-13

申请号：US11600556

申请日：2006-11-16

申请人： Yicheng Lu ,  Ying Chen ,  Zheng Zhang

发明人： Yicheng Lu ,  Ying Chen ,  Zheng Zhang

IPC分类号： H01L29/82

CPC分类号： G01N29/036 ,  B82Y5/00 ,  B82Y15/00 ,  C12Q1/6825 ,  C12Q1/6837 ,  G01N21/6428 ,  G01N27/4145 ,  G01N29/022 ,  G01N33/54373 ,  G01N33/5438 ,  G01N2021/6432 ,  G01N2291/011 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  C12Q2565/501 ,  C12Q2565/607

摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on the integration of ZnO nanotips with bulk acoustic wave (BAW) devices, particularly, quartz crystal microbalance (QCM) and thin film bulk acoustic wave resonator (TFBAR). ZnO nanotips provide giant effective surface area and strong bonding sites. Furthermore, the controllable wettability of ZnO nanostructured surface dramatically reduces the liquid consumption and enhances the sensitivity of the biosensor device.

摘要翻译： 本发明提供了基于ZnO纳米片与体声波（BAW）器件，特别是石英晶体微天平（QCM）和薄膜体声波谐振器（TFBAR）的集成的多功能生物和生物化学传感器技术。 ZnO纳米片提供巨大的有效表面积和强结合位置。 此外，ZnO纳米结构表面的可润湿性显着降低了液体消耗，提高了生物传感器的灵敏度。

公开(公告)号：US20070158661A1

公开(公告)日：2007-07-12

申请号：US11330669

申请日：2006-01-12

申请人： Yicheng Lu ,  Jian Zhong

发明人： Yicheng Lu ,  Jian Zhong

IPC分类号： H01L33/00

CPC分类号： H01L33/26 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22 ,  H01L33/28

摘要： ZnO nanostructure-based LEDs are provided to improve the emission efficiency. The devices include several configurations. Single crystal ZnO or MgxZn1−xO nanotips are grown on the top of a GaN p-n junction. Also, n-type ZnO nanotips are grown on p-GaN film to form an n-type ZnO nanotip/p-GaN heterojunction LED. A ZnO LED can be formed when depositing n-type ZnO nanotips on a p-type ZnO film layer. The ZnO nanotips, with a p-n junction in the tips, can be grown on glass for a low cost nano-LED, and can be grown on Si substrates to form an integrated ZnO nanoLED array on Si chips.

摘要翻译： 提供基于ZnO纳米结构的LED以提高发射效率。 这些设备包括几种配置。 在GaN p-n结的顶部生长单晶ZnO或Mg x Zn 1-x O O纳米尖端。 此外，n型ZnO纳米尖端在p-GaN膜上生长以形成n型ZnO纳米尖/ p-GaN异质结LED。 当在p型ZnO膜层上沉积n型ZnO纳米尖端时，可以形成ZnO LED。 在尖端具有p-n结的ZnO纳米尖端可以在玻璃上生长用于低成本的纳米LED，并且可以在Si衬底上生长以在Si芯片上形成集成的ZnO纳米LED阵列。

公开(公告)号：US20050145970A1

公开(公告)日：2005-07-07

申请号：US11042533

申请日：2005-01-25

申请人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri Emanetoglu ,  Jian Zhong ,  Shaohua Liang

发明人： Yicheng Lu ,  Haifeng Sheng ,  Sriram Muthukumar ,  Nuri Emanetoglu ,  Jian Zhong ,  Shaohua Liang

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/112 ,  H01L29/84

CPC分类号： H01L31/0392 ,  H01L31/022408 ,  H01L31/108 ,  H01L31/1123 ,  Y02E10/50

摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

摘要翻译： 在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。

公开(公告)号：US06559736B2

公开(公告)日：2003-05-06

申请号：US09905191

申请日：2001-07-13

申请人： Yicheng Lu ,  Nuri W. Emanetoglu

发明人： Yicheng Lu ,  Nuri W. Emanetoglu

IPC分类号： H03H942

CPC分类号： H03H9/02976

摘要： A ZnO monolithically integrated tunable surface acoustic wave (MITSAW) device uses tunable acousto-electric and acouso-optic interaction between surface acoustic waves (SAW) and a two dimensional electron gas (2DEG) in a ZnO/MgxZn1−xO quantum well. The high electromechanical coupling coefficients of piezoelectric ZnO in conjunction with the low acoustic loss and high velocity of sapphire (Al2O3) offers high frequency and low loss RF applications. The 2DEG interacts with the lateral electric field resulting in ohmic loss which attenuates and slows the surface acoustic wave. This mechanism is used to tune the acoustic velocity. The high coupling coefficients offered by the ZnO/R—(Al2O3) systems allows large velocity tuning. Combined with the optical characteristics of the wide and direct band gap (about 3.3 eV) semiconductor and transparent ZnO electrodes, the MITSAW chip can be used for UV optical signal processing. R-plane sapphire is chosen instead of the popular C-plane substrate, as this substrate provides in-plane anisotropy in the ZnO layer. ZnO MITSAW technology not only improves existing devices but also develops many important application areas, such as tunable/adaptive filters, voltage-controlled oscillators, zero-power remote wireless sensors, and fixed and tunable UV optical delay lines.

摘要翻译： ZnO单片集成可调谐声表面波（MITSAW）器件在ZnO / Mg x Zn 1-x O量子阱中使用表面声波（SAW）和二维电子气（2DEG）之间的可调声 - 电和acouso-optic相互作用。 压电ZnO的高机电耦合系数与低声波损耗和蓝宝石（Al2O3）的高速度结合提供高频率和低损耗RF应用。 2DEG与横向电场相互作用，导致欧姆损耗衰减和减慢声表面波。 该机制用于调节声速。 由ZnO / R-（Al2O3）系统提供的高耦合系数允许大的速度调谐。 结合宽带直接带隙（约3.3eV）半导体和透明ZnO电极的光学特性，MITSAW芯片可用于UV光信号处理。 选择R平面蓝宝石代替流行的C平面衬底，因为该衬底在ZnO层中提供面内各向异性。 ZnO MITSAW技术不仅改进了现有器件，而且开发了许多重要的应用领域，如可调谐/自适应滤波器，压控振荡器，零功率远程无线传感器以及固定和可调UV光延迟线。

公开(公告)号：US06541893B2

公开(公告)日：2003-04-01

申请号：US09873499

申请日：2001-06-04

申请人： Jiahua Zhu ,  Yicheng Lu ,  John Kosinski ,  Robert Pastore

发明人： Jiahua Zhu ,  Yicheng Lu ,  John Kosinski ,  Robert Pastore

IPC分类号： H03H925

CPC分类号： H03H9/6403

摘要： A novel programmable SAW filter with switchable multi-element interdigital transducers (IDTs) controlled by a microprocessor or a computer is provided that realizes the tunability of both center frequency and bandwidth of the SAW filter. The filter possesses the feature of the programmability of both center frequency and 3 dB bandwidth. As an example design, the center frequency of the SAW filter ranges from 126.8 MHz to 199.1 MHz while the 3 dB bandwidth ranges from 18.8 MHz to 58.9 MHz. The multi-input configuration increases the programmability of the device and improves insertion loss. A matching network for the programmable SAW filter further improves insertion loss level and stopband attenuation. A resistance weighting method has been applied to improve in band ripple with the passband ripple being reduced from 6.44 dB to 1.37 dB after resistance weighting. The prototype of programmable SAW filter simplifies the device structure and fabrication process by eliminating the tap weighting and summing circuits, resulting in a smaller device and lower costs. Moreover, frequency response shaping is realized without apodization.

公开(公告)号：US06233070B1

公开(公告)日：2001-05-15

申请号：US09137399

申请日：1998-08-20

申请人： Yicheng Lu ,  Ralf-Dieter Pechstedt

发明人： Yicheng Lu ,  Ralf-Dieter Pechstedt

IPC分类号： G02F1259

CPC分类号： G02F1/2257 ,  G02F2201/126

摘要： An optical system comprises two optical paths P1, P2, and an optical path changer for changing the optical length of the two optical paths. The optical path changer includes two phase modulators M1, M2 one coupled to each of the paths. A driving system is configured to apply power to the phase modulators to drive them in the same direction and to change the power applied to the phase modulators in opposite directions so as to change the length of each optical path in a different direction. As a result, the relationship between the changes in the power applied to the phase modulators and the resulting changes in the phase of light beams passing through the optical system becomes substantially linear.

摘要翻译： 光学系统包括两个光路P1，P2和用于改变两个光路的光学长度的光路改变器。 光路改变器包括耦合到每个路径的两个相位调制器M1，M2。 驱动系统被配置为向相位调制器施加功率以在相同方向上驱动它们，并且以相反方向改变施加到相位调制器的功率，以便改变沿不同方向的每个光路的长度。 结果，施加到相位调制器的功率的变化与通过光学系统的光束的相位变化之间的关系变得基本上是线性的。