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1.发明申请Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 有权具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触公开(公告)号：US20050145970A1
公开(公告)日：2005-07-07
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L29/84
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译： 在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。
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2.发明授权Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films 有权具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触公开(公告)号：US07400030B2
公开(公告)日：2008-07-15
申请号：US11042533
申请日：2005-01-25
申请人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
发明人： Yicheng Lu , Haifeng Sheng , Sriram Muthukumar , Nuri William Emanetoglu , Jian Zhong , Shaohua Liang
IPC分类号： H01L29/04
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译： 在本发明中，提供了半导体器件，例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上，肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。
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3.发明授权Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films 失效具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触公开(公告)号：US06846731B2
公开(公告)日：2005-01-25
申请号：US10158540
申请日：2002-05-30
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/108 , H01L31/112 , H01L21/28
CPC分类号： H01L31/0392 , H01L31/022408 , H01L31/108 , H01L31/1123 , Y02E10/50
摘要： In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
摘要翻译： 在本发明中，提供了在n型ZnO和Mg x Zn 1-x O外延膜上制造的肖特基UV光电探测器等半导体器件。 ZnO和MgxZn1-xO膜在R平面蓝宝石衬底上生长，肖特基二极管分别用银和铝作为肖特基和欧姆接触金属制作在ZnO和Mg x Zn 1-x O膜上。 肖特基二极管具有圆形图案，其中内圆是肖特基接触，外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造，而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比，这些检测器显示低频光响应，高速光响应，较低的漏电流和低噪声性能。 本发明还可应用于光学调制器，金属半导体场效应晶体管（MESFET）等。
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公开(公告)号：US20070151508A1
公开(公告)日：2007-07-05
申请号：US11311092
申请日：2005-12-19
申请人： Yicheng Lu , Sriram Muthukumar , Nuri Emanetoglu
发明人： Yicheng Lu , Sriram Muthukumar , Nuri Emanetoglu
CPC分类号： B82Y30/00 , B82Y15/00 , C30B25/02 , C30B29/16 , C30B29/60 , H01J1/3044 , H01J9/025 , H01J2201/30446 , Y10S977/811 , Y10T428/24802 , Y10T428/24917
摘要： In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01 12) Al2O3 substrates as long as the ZnO grows in a columnar structure along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.
摘要翻译： 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装的ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由半导体，绝缘体或沉积在R平面上的金属（01
12）Al 2 / 只要ZnO沿着这些材料上的ZnO的c轴[0001]以柱状结构生长，就可以进行。 这种自组装的ZnO纳米片和纳米尖端阵列对于场发射显示器和电子发射源，光子带隙器件，近场显微镜，UV光电子学和生物化学传感器的应用是有希望的。 -
公开(公告)号：US20050116263A1
公开(公告)日：2005-06-02
申请号：US10456050
申请日：2003-06-06
IPC分类号： C12Q1/68 , G01N21/64 , G01N27/00 , G01N27/12 , G01N27/414 , G01N29/02 , G01N33/543 , H01L29/84
CPC分类号： G01N21/6428 , C12Q1/6825 , C12Q1/6837 , G01N27/4145 , G01N27/4146 , G01N29/022 , G01N33/54373 , G01N33/5438 , G01N2021/6432 , G01N2291/011 , G01N2291/014 , G01N2291/0255 , G01N2291/0256 , G01N2291/0423 , G01N2291/0426 , C12Q2565/501 , C12Q2565/607
摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on ZnO nanostructures. The ZnO nanotips serve as strong DNA or protein molecule binding sites to enhance the immobilization. Patterned ZnO nanotips are used to provide conductivity-based biosensors. Patterned ZnO nanotips are also used as the gate for field-effect transistor (FET) type sensors. Patterned ZnO nanotips are integrated with SAW or BAW based biosensors. These ZnO nanotip based devices operate in multimodal operation combining electrical, acoustic and optical sensing mechanisms. The multifunctional biosensors can be arrayed and combined into one biochip, which will enhance the sensitivity and accuracy of biological and biochemical detection due to strong immobilization and multimodal operation capability. Such biological and biochemical sensor technology are useful in detection of RNA-DNA, DNA-DNA, protein-protein, protein-DNA and protein-small molecules interaction. It can be further applied for drug discovery, and for environmental monitoring and protection.
摘要翻译： 本发明提供了基于ZnO纳米结构的多功能生物和生物化学传感器技术。 ZnO纳米尖端作为强的DNA或蛋白质分子结合位点来增强固定。 图案化的ZnO纳米尖端用于提供基于导电性的生物传感器。 图案化的ZnO纳米技术也用作场效应晶体管（FET）型传感器的栅极。 图案化的ZnO纳米片与SAW或基于BAW的生物传感器集成。 这些基于ZnO纳米管的器件在电气，声学和光学感测机构的多模式操作中工作。 多功能生物传感器可以排列并组合成一个生物芯片，由于强固定和多模态操作能力，提高了生物和生化检测的灵敏度和准确性。 这种生物和生化传感器技术可用于RNA-DNA，DNA-DNA，蛋白质 - 蛋白质，蛋白质 - DNA和蛋白质 - 小分子相互作用的检测。 可进一步应用于药物发现，环境监测和保护。
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公开(公告)号：US20060054941A1
公开(公告)日：2006-03-16
申请号：US11119475
申请日：2005-04-29
CPC分类号： G01N21/6428 , C12Q1/6825 , C12Q1/6837 , G01N27/4145 , G01N27/4146 , G01N29/022 , G01N33/54373 , G01N33/5438 , G01N2021/6432 , G01N2291/011 , G01N2291/014 , G01N2291/0255 , G01N2291/0256 , G01N2291/0423 , G01N2291/0426 , C12Q2565/501 , C12Q2565/607
摘要： The present invention provides the multifunctional biological and biochemical sensor technology based on ZnO nanostructures. The ZnO nanotips serve as strong DNA or protein molecule binding sites to enhance the immobilization. Patterned ZnO nanotips are used to provide conductivity-based biosensors. Patterned ZnO nanotips are also used as the gate for field-effect transistor (FET) type sensors. Patterned ZnO nanotips are integrated with SAW or BAW based biosensors. These ZnO nanotip based devices operate in multimodal operation combining electrical, acoustic and optical sensing mechanisms. The multifunctional biosensors can be arrayed and combined into one biochip, which will enhance the sensitivity and accuracy of biological and biochemical detection due to strong immobilization and multimodal operation capability. Such biological and biochemical sensor technology are useful in detection of RNA-DNA, DNA-DNA, protein-protein, protein-DNA and protein-small molecules interaction. It can be further applied for drug discovery, and for environmental monitoring and protection.
摘要翻译： 本发明提供了基于ZnO纳米结构的多功能生物和生物化学传感器技术。 ZnO纳米尖端作为强的DNA或蛋白质分子结合位点来增强固定。 图案化的ZnO纳米尖端用于提供基于导电性的生物传感器。 图案化的ZnO纳米技术也用作场效应晶体管（FET）型传感器的栅极。 图案化的ZnO纳米片与SAW或基于BAW的生物传感器集成。 这些基于ZnO纳米管的器件在电气，声学和光学感测机构的多模式操作中工作。 多功能生物传感器可以排列并组合成一个生物芯片，由于强固定和多模态操作能力，提高了生物和生化检测的灵敏度和准确性。 这种生物和生化传感器技术可用于RNA-DNA，DNA-DNA，蛋白质 - 蛋白质，蛋白质 - DNA和蛋白质 - 小分子相互作用的检测。 可进一步应用于药物发现，环境监测和保护。
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公开(公告)号：US06979489B2
公开(公告)日：2005-12-27
申请号：US10243269
申请日：2002-09-13
CPC分类号： B82Y30/00 , B82Y15/00 , C30B25/02 , C30B29/16 , C30B29/60 , H01J1/3044 , H01J9/025 , H01J2201/30446 , Y10S977/811 , Y10T428/24802 , Y10T428/24917
摘要： In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01{overscore (1)}2) Al2O3 substrates as long as the ZnO grows in a columnar stucture along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.
摘要翻译： 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由R平面上沉积的半导体，绝缘体或金属制成的图案化的层或岛上（01（过滤（12）Al 2 O 2 只要ZnO沿着这些材料上的ZnO的c轴[0001]在柱状结构中生长，这些自组装的ZnO纳米尖端和纳米尖端阵列对于在场发射显示器和电子发射中的应用是有希望的 光源带隙器件，近场显微镜，紫外光电子学和生物化学传感器。
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8.发明授权High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy 失效基于光学各向异性的高对比度，超快光学寻址紫外光调制器公开(公告)号：US06366389B1
公开(公告)日：2002-04-02
申请号：US09638156
申请日：2000-08-15
IPC分类号： G02F107
CPC分类号： B82Y20/00 , G02F1/0126 , G02F1/3515 , G02F1/3523 , G02F1/3556
摘要： A high contrast ultrahigh speed optically-addressed ultraviolet light modulator exploits the optical anisotropy in a ZnO film epitaxially grown on (01 {overscore (1)}2) sapphire. This device, which could also be realized in a ZnO bulk crystal or similar wide bandgap material, achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation in a preferred embodiment is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and decays to a quasi-equilibrium value within 100 ps.
摘要翻译： 高对比度超高速光学寻址紫外光调制器利用在
（01 {overscore（1）} 2）蓝宝石外延生长的ZnO膜中的光学各向异性。 该器件也可以在ZnO体晶或类似的宽带隙材料中实现，通过利用由飞秒紫外脉冲产生的最低激子谐振附近的各向异性吸收和伴随的超快速偏振旋转的各向异性漂白，实现高对比度和高速度 。 在优选实施例中的结果调制的特征在于对应于12°的动态极化旋转的70:1的对比度，并且在100ps内衰减到准平衡值。 -
公开(公告)号：US20070158661A1
公开(公告)日：2007-07-12
申请号：US11330669
申请日：2006-01-12
申请人： Yicheng Lu , Jian Zhong
发明人： Yicheng Lu , Jian Zhong
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L33/08 , H01L33/18 , H01L33/22 , H01L33/28
摘要： ZnO nanostructure-based LEDs are provided to improve the emission efficiency. The devices include several configurations. Single crystal ZnO or MgxZn1−xO nanotips are grown on the top of a GaN p-n junction. Also, n-type ZnO nanotips are grown on p-GaN film to form an n-type ZnO nanotip/p-GaN heterojunction LED. A ZnO LED can be formed when depositing n-type ZnO nanotips on a p-type ZnO film layer. The ZnO nanotips, with a p-n junction in the tips, can be grown on glass for a low cost nano-LED, and can be grown on Si substrates to form an integrated ZnO nanoLED array on Si chips.
摘要翻译： 提供基于ZnO纳米结构的LED以提高发射效率。 这些设备包括几种配置。 在GaN p-n结的顶部生长单晶ZnO或Mg x Zn 1-x O O纳米尖端。 此外，n型ZnO纳米尖端在p-GaN膜上生长以形成n型ZnO纳米尖/ p-GaN异质结LED。 当在p型ZnO膜层上沉积n型ZnO纳米尖端时，可以形成ZnO LED。 在尖端具有p-n结的ZnO纳米尖端可以在玻璃上生长用于低成本的纳米LED，并且可以在Si衬底上生长以在Si芯片上形成集成的ZnO纳米LED阵列。
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公开(公告)号：US20120061660A1
公开(公告)日：2012-03-15
申请号：US13087000
申请日：2011-04-14
申请人： Yicheng Lu , Jian Zhong
发明人： Yicheng Lu , Jian Zhong
CPC分类号： H01L33/26 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L33/08 , H01L33/18 , H01L33/22 , H01L33/28
摘要： A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage.
摘要翻译： 一种形成在选自半导体，绝缘体和金属中的至少一种材料的基板上的发光二极管（LED）; 在衬底上沉积ZnO或GaN的至少一个半导体膜层; 纳米尖晶阵列的ZnO或其三元化合物，所述阵列直接或间接生长在至少一个半导体膜层的表面上; 沉积在至少一个半导体膜层上的至少一个透明导电氧化物（TCO）层; 和正向偏压下的半导体p-n结。
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