公开(公告)号：US20090156000A1

公开(公告)日：2009-06-18

申请号：US12332802

申请日：2008-12-11

申请人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/283

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.

摘要翻译： 提供了一种制造半导体器件的方法，其包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂膜，在第一温度下烘烤该涂膜 不能实现有机成分的交联以获得有机膜前体，使用含有第一树脂粒子和水溶性聚合物的第一浆料对有机膜前体进行研磨，使有机膜前体的表面平坦化， 膜前体，其中使用含有第二树脂颗粒和水溶性聚合物的第二浆料将表面平坦化，以使凹陷中的有机膜前体离开，从而暴露绝缘膜，第二树脂颗粒的平均粒径小于 的第一树脂颗粒。

公开(公告)号：US08119517B2

公开(公告)日：2012-02-21

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US07416942B2

公开(公告)日：2008-08-26

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

公开(公告)号：US20070224760A1

公开(公告)日：2007-09-27

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US08114776B2

公开(公告)日：2012-02-14

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20110076833A1

公开(公告)日：2011-03-31

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/762 ,  H01L21/306

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20070178701A1

公开(公告)日：2007-08-02

申请号：US11730890

申请日：2007-04-04

申请人： Gen Toyota ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Gen Toyota ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02043 ,  B24B9/065 ,  B24B37/02 ,  H01L21/02021 ,  H01L21/30625

摘要： There is disclosed a method of processing a substrate, which comprises applying a surfactant or a water soluble polymer agent onto a surface of a substrate to be processed, and sliding a circumferential portion of the substrate and a polishing member against each other to polish the circumferential portion of the substrate.

摘要翻译： 公开了一种处理基材的方法，该方法包括将表面活性剂或水溶性聚合物试剂涂布到待加工基材的表面上，并将基材的圆周部分和抛光部件相互滑动以使周向 部分基板。

公开(公告)号：US5914275A

公开(公告)日：1999-06-22

申请号：US897324

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

公开(公告)号：US5578531A

公开(公告)日：1996-11-26

申请号：US547581

申请日：1995-10-24

申请人： Masako Kodera ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Masako Kodera ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/31053 ,  H01L21/76819 ,  Y10S438/97

摘要： First through fourth wiring layers are formed on the surface of a silicon substrate, then a silicon oxide layer containing fluorine is deposited over the wiring layers and the silicon substrate, and then another silicon oxide layer containing no fluorine is deposited over the silicon oxide layer containing fluorine. Subsequently, the silicon oxide layer containing no fluorine is flattened by polishing it for a predetermined length of time when the silicon oxide layer containing no fluorine is polished, the silicon oxide layer containing fluorine serves as a stopper, since the polishing rate of the silicon oxide layer containing fluorine is lower than that of the silicon oxide layer containing no fluorine.

摘要翻译： 在硅衬底的表面上形成第一到第四布线层，然后在布线层和硅衬底上沉积含氟的氧化硅层，然后在不含氟的氧化硅层上沉积含有氟的氧化硅层， 氟。 随后，当不含氟的氧化硅层被研磨时，将不含氟的氧化硅层经过研磨而平坦化预定的时间长度，由于氧化硅的研磨速度， 含氟的层比不含氟的氧化硅层低。