Abstract:
The present invention relates to a four-stroke cycle internal combustion engine which is adapted to lubricate the inside of the engine using a mixed fuel composed of fuel and lubricant. The four-stroke cycle internal combustion engine includes a combustion chamber; an intake port which opens toward the combustion chamber; an air intake passage communicating with the intake port, the air intake passage having a downstream side air intake passage which is located on a downstream side of a fuel supply device for supplying the mixed fuel to the air intake passage; a crank shaft; a crank chamber accommodating the crank shaft; a branch passage branching off from the air intake passage for communicating the downstream side air intake passage of the air intake passage with the crank chamber; a valve system; a valve chamber accommodating the valve system; a communication passage for communicating the crank chamber with the valve chamber; a circulation passage for communicating the valve chamber with the air intake passage; and a valve disposed in the branch passage for opening and closing the branch passage.
Abstract:
Processes for oxidative dehydrogenation of alkane to one or more olefins, exemplified by ethane to ethylene, are disclosed using novel catalysts. The catalysts comprise a mixture of metal oxides having as an important component nickel oxide (NiO), which give high conversion and selectivity in the process. The catalyst can be used to make ethylene by contacting it with a gas mixture containing ethane and oxygen. The gas mixture may optionally contain ethylene, an inert diluent such as nitrogen, or both ethylene and an inert diluent.
Abstract:
A two tier power module has, in one form thereof, a PC board having upper and lower traces with an opening in the insulating material that contains a power device which has upward extending solder bump connections. An upper leadframe is mounted on the solder bumps and the upper tracks of the PC board. Vias in the PC board connect selected upper and lower traces. A control device is mounted atop the leadframe and wire bonded to the leadframe, and the assembly is encapsulated leaving exposed the bottom surfaces of the lower traces of the PC board as external connections. In another form the PC board is replaced by a planar leadframe and the upper leadframe has stepped sections which make connections with the planar leadframe, the bottom surfaces of the planar leadframe forming external connections of the module.
Abstract:
An exemplary semiconductor die package is disclosed having one or more semiconductor dice disposed on a first substrate, one or more packaged electrical components disposed on a second substrate that is electrical coupled to the first substrate, and an electrically insulating material disposed over portions of the substrates. The first substrate may hold power-handling devices and may be specially constructed to dissipation heat and to facilitate fast and inexpensive manufacturing. The second substrate may hold packaged components of control circuitry for the power-handling devices, and may be specially constructed to enable fast and inexpensive wiring design and fast and inexpensive component assembly. The first substrate may be used with different designs of the second substrate.
Abstract:
Disclosed are packages for optocouplers and methods of making the same. An exemplary optocoupler comprises a substrate having a first surface and a second surface, a plurality of optoelectronic dice for one or more optocouplers disposed on the substrate's first surface, and a plurality of optoelectronic dice for one or more optocouplers disposed on the substrate's second surface. The substrate may comprise a pre-molded leadframe, and electrical connections between optoelectronic dice on opposite surfaces of the substrate may be made via one or more leads of the leadframe.
Abstract:
Catalysts and methods for alkane oxydehydrogenation are disclosed. The catalysts of the invention generally comprise (i) nickel or a nickel-containing compound and (ii) at least one or more of titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), tungsten (W), yttrium (Y), zinc (Zn), zirconium (Zr), or aluminum (Al), or a compound containing one or more of such element(s). In preferred embodiments, the catalyst is a supported catalyst, the alkane is selected from the group consisting of ethane, propane, isobutane, n-butane and ethyl chloride, molecular oxygen is co-fed with the alkane to a reaction zone maintained at a temperature ranging from about 250° C. to about 350° C., and the ethane is oxidatively dehydrogenated to form the corresponding alkene with an alkane conversion of at least about 10% and an alkene selectivity of at least about 70%.
Abstract:
Semiconductor die packages, methods of making said packages, and systems using said packages are disclosed. An exemplary package comprises at least one semiconductor die disposed on one surface of a leadframe and electrically coupled to at least one conductive region of the leadframe, and at least one passive electrical component disposed on the other surface of a leadframe and electrically coupled to at least one conductive region of the leadframe. Molding material is disposed over the at least one passive electrical component to provide a molded passive component.
Abstract:
A semiconductor die package. The semiconductor includes a premolded substrate. The premolded substrate includes (i) a leadframe structure, (ii) a first semiconductor die comprising a first die surface and a second die surface, attached to the leadframe structure, and (iii) a molding material covering at least a portion of the leadframe structure and the first semiconductor die. The premolded substrate includes a first premolded substrate surface and a second premolded substrate surface. A second semiconductor die is stacked on the second premolded substrate surface of the premolded substrate. A housing material is on at least a portion of the second semiconductor die and the second premolded substrate surface of the premolded substrate. One of the first semiconductor die and the second semiconductor die includes a transistor while the other includes an integrated circuit.
Abstract:
Catalysts and methods for alkane oxydehydrogenation are disclosed. The catalysts of the invention generally comprise (i) nickel or a nickel-containing compound and (ii) at least one or more of titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), tungsten (W), yttrium (Y), zinc (Zn), zirconium (Zr), or aluminum (Al), or a compound containing one or more of such element(s). In preferred embodiments, the catalyst is a supported catalyst, the alkane is selected from the group consisting of ethane, propane, isobutane, n-butane and ethyl chloride, molecular oxygen is co-fed with the alkane to a reaction zone maintained at a temperature ranging from about 250° C. to about 350° C., and the ethane is oxidatively dehydrogenated to form the corresponding alkene with an alkane conversion of at least about 10% and an alkene selectivity of at least about 70%.
Abstract:
Catalysts and methods for alkane oxydehydrogenation are disclosed. The catalysts of the invention generally comprise (i) nickel or a nickel-containing compound and (ii) at least one or more of titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), tungsten (W), yttrium (Y), zinc (Zn), zirconium (Zr), or aluminum (Al), or a compound containing one or more of such element(s). In preferred embodiments, the catalyst is a supported catalyst, the alkane is selected from the group consisting of ethane, propane, isobutane, n-butane and ethyl chloride, molecular oxygen is co-fed with the alkane to a reaction zone maintained at a temperature ranging from about 250° C. to about 350° C., and the ethane is oxidatively dehydrogenated to form the corresponding alkene with an alkane conversion of at least about 10% and an alkene selectivity of at least about 70%.