公开(公告)号：US20090104761A1

公开(公告)日：2009-04-23

申请号：US11875062

申请日：2007-10-19

申请人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

发明人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

IPC分类号： H01L21/26 ,  C23C16/513

CPC分类号： H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

摘要翻译： 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

公开(公告)号：US06528805B2

公开(公告)日：2003-03-04

申请号：US09916998

申请日：2001-07-27

申请人： Ziwei Fang ,  Matthew Goeckner

发明人： Ziwei Fang ,  Matthew Goeckner

IPC分类号： H01J37244

CPC分类号： H01J37/32412 ,  H01J37/32935 ,  H01J2237/24405 ,  H01J2237/31703

摘要： Plasma doping apparatus includes a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece such as a semiconductor wafer, a source of ionizable gas coupled to the chamber, an anode spaced from the platen and a pulse source for applying voltage pulses between the platen and the anode. The voltage pulses produce a plasma having a plasma sheath in the vicinity of the workpiece. The voltage pulses accelerate positive ions across the plasma sheath toward the platen for implantation into the workpiece. The plasma doping apparatus includes at least one Faraday cup positioned adjacent to the platen for collecting a sample of the positive ions accelerated across the plasma sheath. The sample is representative of the dose of positive ions implanted into the workpiece. The Faraday cup may include a multi-aperture cover for reducing the risk of discharge within the interior chamber of the Faraday cup. The Faraday cup may be configured to produce a lateral electric field within the interior chamber for suppressing escape of electrons, thereby improving measurement accuracy.

公开(公告)号：US06335536B1

公开(公告)日：2002-01-01

申请号：US09427872

申请日：1999-10-27

申请人： Matthew J. Goeckner ,  Ziwei Fang

发明人： Matthew J. Goeckner ,  Ziwei Fang

IPC分类号： H01G37317

CPC分类号： H01J37/32412 ,  H01J37/32009

摘要： A pulsed plasma doping system separates the plasma ignition function from the ion implantation function. An ignition voltage pulse is supplied to an ionizable gas and an implantation voltage pulse is applied to the target. The implantation voltage pulse can be generated from the ignition voltage pulse or can be generated separately from the ignition voltage pulse. Ions may be implanted in the target at an energy level that is below the Paschen curve for the system.

摘要翻译： 脉冲等离子体掺杂系统将等离子体点火功能与离子注入功能分离。 将点火电压脉冲提供给可电离气体，并将注入电压脉冲施加到靶。 注入电压脉冲可以从点火电压脉冲产生，也可以与点火电压脉冲分开产生。 离子可以在系统的Paschen曲线以下的能级被植入靶内。

公开(公告)号：US07476849B2

公开(公告)日：2009-01-13

申请号：US11371907

申请日：2006-03-10

申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

IPC分类号： H01J49/40 ,  G01N27/26 ,  G01N33/00

CPC分类号： H01J49/40 ,  H01J37/32935

摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

公开(公告)号：US20080026133A1

公开(公告)日：2008-01-31

申请号：US10858582

申请日：2004-06-02

申请人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

发明人： Ziwei Fang ,  Sung-Cheon Ko ,  Edmund J. Winder ,  Daniel Distaso ,  Ludovic Godet ,  Bon Woong Koo ,  Jay T. Scheuer

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： H01J37/32412

摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。

公开(公告)号：US20060289799A1

公开(公告)日：2006-12-28

申请号：US11376522

申请日：2006-03-15

申请人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

发明人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold Persing

IPC分类号： H01J37/08

CPC分类号： H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

公开(公告)号：US20050287307A1

公开(公告)日：2005-12-29

申请号：US10874944

申请日：2004-06-23

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

公开(公告)号：US08501570B2

公开(公告)日：2013-08-06

申请号：US12981610

申请日：2010-12-30

申请人： Ziwei Fang ,  Jeff J. Xu ,  Ming-Jie Huang ,  Yimin Huang ,  Zhiqiang Wu ,  Min Cao

发明人： Ziwei Fang ,  Jeff J. Xu ,  Ming-Jie Huang ,  Yimin Huang ,  Zhiqiang Wu ,  Min Cao

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/7848 ,  H01L21/02057 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/30608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78

摘要： An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.

摘要翻译： 用于制造集成电路器件的集成电路器件和方法通过在第一掺杂区域中形成第二掺杂区域并且去除第一和第二掺杂区域，从而提供对用于形成集成电路器件的源极和漏极特征的沟槽形状的改进的控制 第二掺杂区域通过第一和第二湿蚀刻工艺。

公开(公告)号：US07453059B2

公开(公告)日：2008-11-18

申请号：US11678524

申请日：2007-02-23

申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

IPC分类号： G01N27/26 ,  G01N33/00 ,  H01J49/40

CPC分类号： H01J37/32422 ,  H01J37/32935

摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

公开(公告)号：US20080044257A1

公开(公告)日：2008-02-21

申请号：US11770220

申请日：2007-06-28

申请人： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

发明人： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Edwin A. Arevalo ,  Ziwei Fang ,  Vikram Singh

IPC分类号： H01L21/677

CPC分类号： H01L21/67115 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。