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公开(公告)号：US20140167188A1
公开(公告)日：2014-06-19
申请号：US13718598
申请日：2012-12-18
Applicant: Ruben B. Montez , Robert F. Steimle
Inventor： Ruben B. Montez , Robert F. Steimle
CPC classification number: B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0038 , B81C1/00952 , B81C2201/0169 , B81C2201/112 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.
Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。
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公开(公告)号：US08513042B2
公开(公告)日：2013-08-20
申请号：US13320579
申请日：2010-06-15
Applicant: Francois Perruchot , Lianjun Liu , Sergio Pacheco , Emmanuel Defay , Patrice Rey
Inventor： Francois Perruchot , Lianjun Liu , Sergio Pacheco , Emmanuel Defay , Patrice Rey
IPC: H01L21/00
CPC classification number: B81C1/00666 , B81B2203/0118 , B81C2201/0167 , B81C2201/0169
Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.
Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。
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公开(公告)号：US20120056308A1
公开(公告)日：2012-03-08
申请号：US13320579
申请日：2010-06-15
Applicant: Francois Perruchot , Lianjun Liu , Sergio Pacheco , Emmanuel Defay , Patrice Rey
Inventor： Francois Perruchot , Lianjun Liu , Sergio Pacheco , Emmanuel Defay , Patrice Rey
CPC classification number: B81C1/00666 , B81B2203/0118 , B81C2201/0167 , B81C2201/0169
Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.
Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。
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公开(公告)号：US08057882B2
公开(公告)日：2011-11-15
申请号：US12225670
申请日：2007-03-28
Applicant: Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
Inventor： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
Abstract translation: 本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。
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公开(公告)号：US20060166403A1
公开(公告)日：2006-07-27
申请号：US11242960
申请日：2005-10-05
Applicant: Luc Ouellet , Robert Antaki
Inventor： Luc Ouellet , Robert Antaki
CPC classification number: B81C1/00246 , B81C1/00666 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169 , B81C2203/0735
Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.
Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。
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Patent Agency Ranking
公开(公告)号：US5677090A
公开(公告)日：1997-10-14
申请号：US604678
申请日：1996-02-21
Applicant: Kenji Marumoto , Hideki Yabe , Sunao Aya , Koji Kise , Kei Sasaki
Inventor： Kenji Marumoto , Hideki Yabe , Sunao Aya , Koji Kise , Kei Sasaki
CPC classification number: G03F1/22 , B81C1/00666 , B81C2201/0167 , B81C2201/0169
Abstract: A method of making a X-ray mask including: a step of forming a X-ray absorber above a substrate; a step of controlling a stress of the X-ray absorber by a predetermined condition; and wherein the predetermined condition for controlling the stress of the X-ray absorber formed above the substrate is determined by a measured value of a stress of a X-ray absorber formed on a monitor substrate.
Abstract translation: 一种制造X射线掩模的方法，包括：在衬底上形成X射线吸收体的步骤; 控制X射线吸收体的应力为预定条件的步骤; 并且其中用于控制形成在基板上方的X射线吸收体的应力的预定条件由形成在监视器基板上的X射线吸收体的应力的测量值确定。
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公开(公告)号：US09604845B2
公开(公告)日：2017-03-28
申请号：US14873091
申请日：2015-10-01
Applicant: STMicroelectronics, Inc.
Inventor： Ming Fang
CPC classification number: B81C1/00666 , B81B7/0029 , B81B2203/0181 , B81C1/0019 , B81C2201/0169 , B81C2201/112
Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.
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公开(公告)号：US20150008788A1
公开(公告)日：2015-01-08
申请号：US14185160
申请日：2014-02-20
Inventor： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
CPC classification number: B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。
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公开(公告)号：US20110284995A1
公开(公告)日：2011-11-24
申请号：US13112587
申请日：2011-05-20
Applicant: Jan H. Kuypers , Andrew Sparks , Klaus Juergen Schoepf , Reimund Rebel
Inventor： Jan H. Kuypers , Andrew Sparks , Klaus Juergen Schoepf , Reimund Rebel
IPC: H01L29/06 , H01L21/324 , H01L21/316
CPC classification number: B81C1/00658 , B81B7/02 , B81B2201/0271 , B81C1/00158 , B81C2201/0169 , H03H9/02275 , H03H9/2405 , H03H2009/241
Abstract: Micromechanical membranes suitable for formation of mechanical resonating structures are described, as well as methods for making such membranes. The membranes may be formed by forming cavities in a substrate, and in some instances may be oxidized to provide desired mechanical properties. Mechanical resonating structures may be formed from the membrane and oxide structures.
Abstract translation: 描述适于形成机械共振结构的微机械膜以及制造这种膜的方法。 膜可以通过在基底中形成空腔而形成，并且在一些情况下可以被氧化以提供期望的机械性质。 机械共振结构可以由膜和氧化物结构形成。
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公开(公告)号：US20090176064A1
公开(公告)日：2009-07-09
申请号：US12225670
申请日：2007-03-28
Applicant: Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
Inventor： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
IPC: B32B3/10 , B05D3/02 , B05D5/12 , C23C16/513 , H01L21/306
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
Abstract translation: 本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。
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