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公开(公告)号：US20160167950A1
公开(公告)日：2016-06-16
申请号：US14961760
申请日：2015-12-07
Applicant: SiTime Corporation
Inventor： Aaron Partridge , Markus Lutz , Pavan Gupta
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
Abstract translation: 具有开口的半导体层和形成在开口中的MEMS谐振器设置在第一和第二基板之间以封装MEMS谐振器。 至少部分地在半导体层内并且至少部分地在第一衬底内形成从MEMS器件的开口延伸到外部的电接触。
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公开(公告)号：US20070170531A1
公开(公告)日：2007-07-26
申请号：US11593428
申请日：2006-11-06
Applicant: Aaron Partridge , Markus Lutz , Pavan Gupta
Inventor： Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L29/84
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.
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公开(公告)号：US20070170529A1
公开(公告)日：2007-07-26
申请号：US11545052
申请日：2006-10-06
Applicant: Aaron Partridge , Markus Lutz , Pavan Gupta
Inventor： Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L29/84
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.
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公开(公告)号：US11944998B2
公开(公告)日：2024-04-02
申请号：US16822018
申请日：2020-03-18
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Byung Chul Lee , Dong-Hyun Kang , Jin soo Park , Tae Song Kim
CPC classification number: B06B1/0292 , B81B3/0086 , B81C1/00698 , B81B2201/0271 , B81B2203/0127 , B81B2207/07 , B81C2201/0171 , B81C2201/0178 , B81C2201/0194
Abstract: A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.
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公开(公告)号：US20230416081A1
公开(公告)日：2023-12-28
申请号：US18340815
申请日：2023-06-23
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
CPC classification number: B81C1/00698 , H10N30/05 , H10N39/00 , H03H3/0073 , H03H9/1057 , B81C2201/0171 , B81C1/00158
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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Patent Agency Ranking
公开(公告)号：US09758371B2
公开(公告)日：2017-09-12
申请号：US15242437
申请日：2016-08-19
Applicant: SiTime Corporation
Inventor： Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L23/051 , B81C1/00 , B81B7/00 , H01L41/113
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号：US09272900B2
公开(公告)日：2016-03-01
申请号：US12864205
申请日：2008-01-30
Applicant: Shih-Yuan Wang , Michael Renne Ty Tan
Inventor： Shih-Yuan Wang , Michael Renne Ty Tan
IPC: H01L29/06 , B81C1/00 , B82Y10/00 , H01L31/0352 , H01L31/105
CPC classification number: B81C1/00142 , B81C2201/0171 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L31/035281 , H01L31/105 , H01L2924/0002 , Y02E10/50 , H01L2924/00
Abstract: A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer (18, 30). The highly conductive microcrystalline layer includes a microcrystalline material and a metal. The bipolar nanowire has one end attached to the highly conductive microcrystalline layer and another end attached to the other layer.
Abstract translation: 纳米结构包括高导电微晶层，双极纳米线和另一层（18,30）。 高导电性微晶层包括微晶材料和金属。 双极纳米线的一端连接到高导电微晶层，另一端连接到另一层。
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公开(公告)号：US20100266768A1
公开(公告)日：2010-10-21
申请号：US12734996
申请日：2008-08-27
Applicant: Abu Samah Zuruzi
Inventor： Abu Samah Zuruzi
CPC classification number: B81C1/00698 , B81B2201/0214 , B81B2201/058 , B81C1/00206 , B81C2201/0171 , G01N33/0024
Abstract: A method of doping at least one element in an array of elements on a substrate is disclosed. The method comprises providing at least one microfluidic channel passing from a first location external of the at least one element to a second location in fluidic communication with the at least one element. A dopant fluid is passed through the at least one microfluidic channel to the at least one element for doping the at least one element. A corresponding apparatus is also disclosed.
Abstract translation: 公开了一种在衬底上的元件阵列中掺杂至少一种元素的方法。 该方法包括提供至少一个从至少一个元件外部的第一位置通过至少与一个元件流体连通的第二位置的微流体通道。 掺杂剂流体通过至少一个微流体通道至至少一个元件以掺杂至少一个元件。 还公开了相应的装置。
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公开(公告)号：US20070181962A1
公开(公告)日：2007-08-09
申请号：US11580197
申请日：2006-10-12
Applicant: Aaron Partridge , Markus Lutz , Pavan Gupta
Inventor： Aaron Partridge , Markus Lutz , Pavan Gupta
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.
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公开(公告)号：US20070172976A1
公开(公告)日：2007-07-26
申请号：US11593404
申请日：2006-11-06
Applicant: Aaron Partridge , Markus Lutz , Pavan Gupta
Inventor： Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L21/00
CPC classification number: B81C1/00277 , B81B7/0035 , B81B7/0058 , B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/00269 , B81C1/00301 , B81C2201/0171 , B81C2203/031 , B81C2203/036 , B81C2203/037 , B81C2203/038 , H01L23/051 , H01L41/1136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.
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