Abstract:
An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
Abstract:
An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector. The instrument also has an electron mirror configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane of the second magnetic deflector.
Abstract:
A spectrometer (10) for sample surface analysis by irradiation of the surface by primary particles and a corresponding method of surface analysis spectroscopy. The spectrometer (10) provides sample viewing and secondary charged particle collection substantially normal to the sample surface. A collection chamber (22) comprises a secondary charged particle lens arrangement (20) to focus the emitted particles in a downstream direction along a first normal axis (24) and thereby to define a charged particle optical crossover location (25); and a light-reflecting optical element (50) downstream of the lens arrangement and arranged to receive image light (41) and reflect it away from a second normal axis (42) for providing a viewable image of the surface. The optical element (50) is positioned at, or near to, the crossover location (25) and comprises an opening (52) therethrough, such that the focused particles pass through the opening for downstream spectroscopic analysis substantially without obstruction by the optical element.
Abstract:
A measuring device, a measuring method, and an evaluating device for easily and accurately obtaining information suitable to evaluate, for example, the discharge characteristic of an insulating film such as an MgO protective layer of a plasma display are provided. An MgO film surface, a sample to be measured, is irradiated with electrons or ions emitted from an electron gun (130) or an ion gun (140). The energy distribution of the secondary electrons emitted from the sample is measured by an electron spectrograph (150), and the spectrum data on the measured secondary electrons is supplied to an analyzing device (200). The analyzing device (200) analyzes the spectrum data and determines information (evaluation values) to evaluate the properties of the sample to be measured.