摘要:
GERMANIUM HAVING A PURITY OF THE ORDER OF 10**12 UNCOMPENSATED ELECTRICALLY ACTIVE IMPURITY ATOMS PER CUBIC CENTIMETER THEREOF IS PROCESSED TO PRODUCE HYPERPURE GERMANIUM HAVING A PURITY, REPRESENTED BY THE ORDER OF 10**10 CONCOMPENSATED IMPURITY ATOMS PER CUBIC CENTIMETER THEREOF, BY MELTING COMMERCIALLY AVAILABLE, HIGH-PURITY GERMANIUM OF THE AFOREMENTIONED IMPURITY LEVEL IN A REACTION CHAMBER WHEREIN THE MOLTEN GERMANIUM HAS A SUBSTANTIAL PORTION OF THE SURFACE THEREOF IN CONTACT WITH THE AMBIENT ATMOSPHERE AND GROWING A CRYSTALLINE INGOT THEREFROM BY FRACTIONAL CRYSTALLIZATION WHILE PURE DRY NITROGEN IS PASSED THROUGH THE REACTION CHAMBER.
摘要:
Processes for producing germanium-68 from a gallium target body are disclosed. In some embodiments, germanium-68 and gallium are precipitated to remove metal impurities. Germanium-68 and gallium are re-dissolved and loaded onto an ion exchange column to separate germanium-68 from gallium.
摘要:
A process is provided for the production of elemental silicon from a silica containing glass melt including contacting the glass with a metal capable of undergoing a bimolecular reaction between the glass and metal at elevated temperature to reduce the oxidation state of the silicon in the glass to elemental silicon while oxidizing the metal, collecting, and optionally separating the elemental silicon. Similarly, elemental germanium is produced from a germania-containing glass.
摘要:
It is possible to efficiently obtain a purified material from a material containing a metalloid element such as silicon or metal element as the main component, and an impurity. The method for purifying a material, comprising bringing a material containing a metalloid element or metal element as the main component, and an impurity into contact with a compound represented by the following formula (1): AlX3 (1) wherein X is a halogen atom; to remove the impurity from the material.