公开(公告)号：US20080191598A1

公开(公告)日：2008-08-14

申请号：US11704910

申请日：2007-02-12

Applicant: Wanli Yang ,  Jason D. Fabbri ,  Nicholas A. Melosh ,  Zahid Hussain ,  Zhi-Xun Shen

Inventor： Wanli Yang ,  Jason D. Fabbri ,  Nicholas A. Melosh ,  Zahid Hussain ,  Zhi-Xun Shen

IPC: H01J9/02 ,  B01J3/06

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30457

Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Abstract translation: 提供基于金刚石单层的电子发射体，优选自组装的较高的类金刚石单层。 已经证明使用这种类金刚石单层的高强度电子发射，特别是当单层由更高的金刚石组成时。 这种类金刚石单层的应用可以改变衬底的带结构，并且发射单色电子，并且高强度电子发射也可以极大地提高应用于工业和商业应用的场效应电子发射体的效率。

公开(公告)号：US07256535B2

公开(公告)日：2007-08-14

申请号：US10833803

申请日：2004-04-28

Applicant: Jimmy L. Davidson ,  Wang Poo Kang ,  David V. Kerns ,  Mickey Evans Howell

Inventor： Jimmy L. Davidson ,  Wang Poo Kang ,  David V. Kerns ,  Mickey Evans Howell

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/46

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G01L9/0041 ,  G01L9/0047 ,  G01P15/0802 ,  G01P15/0894 ,  G01P2015/0828 ,  H01J1/3042 ,  H01J1/3044 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30457

Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract translation: 金刚石微尖端场发射器用于三极管真空微电子器件，传感器和显示器。 可以制造具有整体阳极和栅格结构的金刚石三极管器件。 在制造工艺中在发射体上形成超尖尖，其中金刚石以两步沉积顺序沉积到模腔中。 在沉积金刚石期间，仔细控制碳石墨含量以增强排放性能。 尖端或发射器通过后制造处理来进一步提高性能。

公开(公告)号：US20070042667A1

公开(公告)日：2007-02-22

申请号：US11510478

申请日：2006-08-23

Applicant: Chien-Min Sung

Inventor： Chien-Min Sung

IPC: H01J9/04

CPC classification number: H01J1/304 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/30476

Abstract: Diamond-like carbon based energy conversion devices and methods of making and using the same which have improved conversion efficiencies and increased reliability. Such a device may include a cathode having a base member with a layer of diamond-like carbon material coated over at least a portion thereof, an intermediate member electrically coupled to the diamond-like carbon material, the intermediate member including a plurality of carbon structures coated with a layer of an insulating material, and an anode electrically coupled to the intermediate member opposite the diamond-like carbon material.

Abstract translation: 类金刚石碳的能量转换装置及其制造和使用方法，其具有改进的转换效率和增加的可靠性。 这种装置可以包括阴极，该阴极具有在其至少一部分上涂覆有金刚石碳材料层的基底构件，电耦合到类金刚石碳材料的中间构件，所述中间构件包括多个碳结构 涂覆有绝缘材料层，以及阳极，电耦合到与金刚石状碳材料相对的中间构件。

公开(公告)号：US20060131588A1

公开(公告)日：2006-06-22

申请号：US10398329

申请日：2001-10-09

Applicant: Dieter Gruen ,  Olando Auciello ,  Greg Swain ,  Ming Ding ,  John Carlisle ,  Alan Krauss ,  Julie Krauss

Inventor： Dieter Gruen ,  Olando Auciello ,  Greg Swain ,  Ming Ding ,  John Carlisle ,  Alan Krauss ,  Julie Krauss

IPC: H01L31/0312

CPC classification number: C23C16/278 ,  C23C16/274 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30457

Abstract: An electrode having a surface of an electrically conducting ultrananocrystalline diamond having not less than 1019 atoms/cm3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω·cm)−1 is disclosed as is a method of remediating toxic materials with the electrode. An electron emission device incorporating an electrically conducting ultrananocrystalline diamond having not less that 1019 atoms/cm3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω·cm)−1 is disclosed.

Abstract translation: 具有导电超微晶金刚石表面的电极，其表面具有不小于10 19原子/ cm 3的氮，导电性在环境温度下不低于约0.1（ 公开了一种用电极补救有毒物质的方法。 一种电子发射装置，其结合有不少于10 19原子/ cm 3的导电超微晶金刚石，其环境温度为不小于约0.1（Ω） .cm） ^{-1 。}

公开(公告)号：US20060001360A1

公开(公告)日：2006-01-05

申请号：US11211665

申请日：2005-08-26

Applicant: Natsuo Tatsumi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Takahiro Imai

IPC: H01J1/62

CPC classification number: H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

Abstract: An object of the present invention is to provide a cold-cathode electron source successfully achieving a high frequency and a high output, a microwave tube using it, and a production method thereof. In a cold-cathode electron source according to the present invention, emitters have a tip portion tapered at an aspect ratio R of not less than 4, and thus the capacitance between the emitters and a gate electrode is decreased by a degree of declination from the gate electrode. For this reason, the cold-cathode electron source is able to support an operation at a high frequency. A cathode material of the cold-cathode electron source is none of the conventional cathode materials such as tungsten and silicon, but is a diamond with a high melting point and a high thermal conductivity. For this reason, the emitters are unlikely to melt even at a high current density of an electric current flowing in the emitters, and thus the cold-cathode electron source is able to support an operation at a high output.

Abstract translation: 本发明的目的是提供一种成功实现高频和高输出的冷阴极电子源，使用它的微波管及其制造方法。 在根据本发明的冷阴极电子源中，发射器具有以不小于4的纵横比R渐缩的尖端部分，因此发射极和栅电极之间的电容从 栅电极。 因此，冷阴极电子源能够以高频率进行动作。 冷阴极电子源的阴极材料不是诸如钨和硅的常规阴极材料，而是具有高熔点和高导热性的金刚石。 因此，即使在发射极中流动的电流的高电流密度下，发射极也不会熔化，因此冷阴极电子源能够支持高输出的动作。

公开(公告)号：US20050168122A1

公开(公告)日：2005-08-04

申请号：US11029906

申请日：2005-01-04

Applicant: Jeremy Dahl ,  Robert Carlson ,  Shenggao Liu

Inventor： Jeremy Dahl ,  Robert Carlson ,  Shenggao Liu

IPC: H01J1/00 ,  H01J1/02 ,  H01J1/304

CPC classification number: H01J1/3048 ,  H01J2201/30457

Abstract: Novel heterodiamondoid-containing field emission devices (FED's) are disclosed herein. In one embodiment of the present invention, the heteroatom of the heterodiamondoid comprises an electron-donating species (such as nitrogen) as part of the cathode or electron-emitting component of the field emission device.

Abstract translation: 本文公开了新型异二茂金属的场致发射器件（FED）。 在本发明的一个实施方案中，杂二环类物质的杂原子包括作为场致发射器件的阴极或电子发射成分的一部分的给电子物质（例如氮）。

公开(公告)号：US20050019576A1

公开(公告)日：2005-01-27

申请号：US10864768

申请日：2004-06-10

Applicant: Jeremy Dahl ,  Robert Carlson ,  Shenggao Liu

Inventor： Jeremy Dahl ,  Robert Carlson ,  Shenggao Liu

IPC: C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C69/00 ,  C07C205/05 ,  C07C211/50 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01L23/373 ,  C23C16/26 ,  B32B9/00

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10T428/30 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Novel uses of higher diamondoids are disclosed. Specifically, higher diamondoids may be used to nucleate diamond films and diamond-like carbon films. Such higher diamondoids include iso-tetramantane [1(2)3], anti-tetramantane [121], the two enantiomers of skew-tetramantane [123], the ten possible pentamantane, the thirty nine possible hexamantanes, the one hundred sixty heptamantanes, as well as the various octamantanes, nonamantanes, decamantanes, and undecamantanes.

Abstract translation: 公开了高级金刚石的新用途。 具体来说，较高的金刚石可用于使金刚石膜和类金刚石碳膜成核。 这种较高的金刚石包括异四聚烷[1（2）3]，抗四聚烷[121]，歪斜 - 四聚烷[123]的两种对映体，十种可能的五金刚烷，三十九种可能的六价烷，一百六十七金刚烷， 以及各种八甲烷，非金刚烷，十九烷和非金刚烷。

公开(公告)号：US20040251478A1

公开(公告)日：2004-12-16

申请号：US10892080

申请日：2004-07-14

Applicant: Chevron U.S.A. Inc.

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: H01L029/768

CPC classification number: C07C4/00 ,  B82Y10/00 ,  B82Y30/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J1/3048 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L23/4334 ,  H01L23/49513 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L35/22 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US06806629B2

公开(公告)日：2004-10-19

申请号：US10094426

申请日：2002-03-08

Applicant: Chien-Min Sung

Inventor： Chien-Min Sung

IPC: H01J102

CPC classification number: H01J1/304 ,  C01B32/25 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30457

Abstract: An amorphous diamond material that is capable of emitting electrons in a vacuum upon the input of a sufficient amount of energy is disclosed. The material may utilize both compositional and geometrical aspects in order to maximize electron output and minimize required energy input. In one aspect, the amorphous diamond material may include at least about 90% carbon atoms with at least about 30% of such carbon atoms bonded in distorted tetrahedral coordination. Further, the material may be configured with an emission surface having an asperity height of from about 10 to about 10,000 nanometers. A variety of energy types may be used separately or in combination to facilitate electron flow, such as thermal energy, light energy, and induced electric field energy. The amorphous diamond material may be incorporated into a variety of vacuum-type devices, such as switches, laser diodes, electrical generators, and cooling devices.

Abstract translation: 公开了一种非晶金刚石材料，其能够在输入足够量的能量时在真空中发射电子。 该材料可以利用组合和几何方面，以最大化电子输出并最小化所需的能量输入。 一方面，无定形金刚石材料可以包括至少约90％的碳原子，其中至少约30％的这些碳原子以变形的四面体配位结合。 此外，材料可以配置有具有约10至约10,000纳米的粗糙度高度的发射表面。 各种能量类型可以单独使用或组合使用以促进电子流动，例如热能，光能和感应电场能量。 非晶金刚石材料可以结合到各种真空型装置中，例如开关，激光二极管，发电机和冷却装置。

公开(公告)号：US20040198049A1

公开(公告)日：2004-10-07

申请号：US10784915

申请日：2004-02-24

Applicant: Chevron U.S.A. Inc.

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, peritamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecarnantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，四金刚烷，六刚烷，七金刚烷，八甲烷，非金刚烷，十烷和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。