公开(公告)号：US20220406625A1

公开(公告)日：2022-12-22

申请号：US17893383

申请日：2022-08-23

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/448

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

公开(公告)号：US20220403522A1

公开(公告)日：2022-12-22

申请号：US17897307

申请日：2022-08-29

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US20220403516A1

公开(公告)日：2022-12-22

申请号：US17842007

申请日：2022-06-16

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Eric Shero ,  Todd Dunn ,  Jonathan Bakke ,  Jereld Winkler ,  Xingye Wang ,  Eric Jen Cheng Liu

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/56

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

公开(公告)号：US20220403513A1

公开(公告)日：2022-12-22

申请号：US17842057

申请日：2022-06-16

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Paul Ma ,  Eric James Shero

IPC: C23C16/455

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US20220389583A1

公开(公告)日：2022-12-08

申请号：US17891851

申请日：2022-08-19

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US11521851B2

公开(公告)日：2022-12-06

申请号：US17162279

申请日：2021-01-29

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20220375744A1

公开(公告)日：2022-11-24

申请号：US17747197

申请日：2022-05-18

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/40

Abstract: Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

公开(公告)号：US20220367195A1

公开(公告)日：2022-11-17

申请号：US17870931

申请日：2022-07-22

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US20220364262A1

公开(公告)日：2022-11-17

申请号：US17743039

申请日：2022-05-12

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Qi Xie

IPC: C30B25/10 ,  C30B33/12 ,  C30B29/08 ,  C30B29/06

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US11501968B2

公开(公告)日：2022-11-15

申请号：US17093224

申请日：2020-11-09

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Anna Trovato ,  Kelly Houben ,  Steven van Aerde ,  Bert Jongbloed ,  Wilco A. Verweij

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/331 ,  H01L27/092 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L21/311 ,  H01L21/285

Abstract: Method for filling a gap, comprising providing in a deposition chamber a semiconductor substrate having a gap, wherein a bottom of the gap includes a crystalline semiconducting material and wherein a side wall of the gap includes an amorphous material; depositing a silicon precursor in the gap.