公开(公告)号：US20180342688A1

公开(公告)日：2018-11-29

申请号：US15602890

申请日：2017-05-23

Applicant: International Business Machines Corporation

Inventor： Damon B. Farmer ,  Shu-Jen Han ,  Jianshi Tang ,  John J. Yurkas

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05

Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.

公开(公告)号：US10139693B2

公开(公告)日：2018-11-27

申请号：US14744764

申请日：2015-06-19

Applicant: International Business Machines Corporation

Inventor： Shu-Jen Han

IPC: G02F1/157 ,  G02F1/15 ,  G02F1/153 ,  H01L31/18 ,  H01L31/102 ,  H01L31/109 ,  H01L31/0232 ,  G06N3/067 ,  G02F1/163 ,  G02F1/155 ,  H01L31/09

Abstract: A synaptic electronic device includes a substrate including a one or more of a semiconductor and an insulator; a photosensitive layer disposed on a surface of the substrate; an electrochromic stack disposed on the photosensitive layer, the electrochromic stack including a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and a pair of electrodes disposed on the photosensitive layer and on opposing sides of the electrochromic stack.

公开(公告)号：US10079149B2

公开(公告)日：2018-09-18

申请号：US15588976

申请日：2017-05-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han ,  Ning Li ,  Jianshi Tang

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/2807 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/32056 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

公开(公告)号：US10075131B2

公开(公告)日：2018-09-11

申请号：US15133281

申请日：2016-04-20

Applicant: International Business Machines Corporation

Inventor： Shu-Jen Han ,  Keith A. Jenkins

IPC: H03B5/08 ,  H03B5/12 ,  H03K3/03

CPC classification number: H03B5/1278 ,  H03B5/1212 ,  H03B5/1243 ,  H03B5/1268 ,  H03K3/03

Abstract: A voltage controlled oscillator (VCO) and a method of operating the VCO are disclosed. The VCO includes an inductor device, a capacitor device coupled in parallel with the inductor device through first and second nodes, and a pair of cross-coupled transistors coupled in parallel with the inductor device and the capacitor device through the first and second nodes. At least one of the pair of cross-coupled transistor includes a plurality of sub transistors coupled in parallel. The sub transistors are individually switchable to adjust current drive capability of each of the sub transistors. Each of the sub transistors includes a first gate and a second gate.

公开(公告)号：US20180229261A1

公开(公告)日：2018-08-16

申请号：US15953885

申请日：2018-04-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shu-Jen Han ,  Bharat Kumar ,  George S. Tulevski

IPC: B05D1/00 ,  B05D7/00 ,  B05D3/04 ,  A61B5/145 ,  A61B5/00

CPC classification number: B05D1/005 ,  A61B5/0004 ,  A61B5/14503 ,  A61B5/14532 ,  A61B5/14542 ,  A61B5/14546 ,  B05D3/0413 ,  B05D7/5483 ,  G01N1/00

Abstract: A method of protecting an in-vivo sensor includes forming a sensing surface on a surface of the in-vivo sensor, the sensing surface including a functionalized monolayer that will bind to an analyte of interest; and coating the sensing surface of the sensor with a bioabsorbable polymeric coating including a bioabsorbable polymer; wherein the bioabsorbable polymeric coating is configured to protect the in-vivo sensor until needed for implantation.

公开(公告)号：US09999899B2

公开(公告)日：2018-06-19

申请号：US15340180

申请日：2016-11-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shu-Jen Han ,  Bharat Kumar ,  George S. Tulevski

IPC: A61B5/00 ,  B05D1/00 ,  A61B5/145 ,  B05D7/00 ,  B05D3/04

CPC classification number: B05D1/005 ,  A61B5/0004 ,  A61B5/14503 ,  A61B5/14532 ,  A61B5/14542 ,  A61B5/14546 ,  B05D3/0413 ,  B05D7/5483 ,  G01N1/00

Abstract: A method of protecting an in-vivo sensor includes forming a sensing surface on a surface of the in-vivo sensor, the sensing surface including a functionalized monolayer that will bind to an analyte of interest; and coating the sensing surface of the sensor with a bioabsorbable polymeric coating including a bioabsorbable polymer; wherein the bioabsorbable polymeric coating is configured to protect the in-vivo sensor until needed for implantation.

公开(公告)号：US20180145270A1

公开(公告)日：2018-05-24

申请号：US15863202

申请日：2018-01-05

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Shu-Jen Han ,  Zhengwen Li ,  Fei Liu

IPC: H01L51/05 ,  H01L51/10 ,  H01L27/28 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L27/283 ,  H01L51/0006 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0048 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/105

Abstract: A method of arranging at least one carbon nanotube on a semiconductor substrate includes depositing the at least one carbon nanotube on a dielectric layer of the semiconductor device. The method further includes arranging the at least one carbon nanotube on the dielectric layer in response to applying a voltage potential to an electrically conductive electrode of the semiconductor device, and applying a ground potential to an electrically conductive semiconductor layer of the semiconductor device.

公开(公告)号：US20180145109A1

公开(公告)日：2018-05-24

申请号：US15857086

申请日：2017-12-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0296

CPC classification number: H01L27/14652 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14696 ,  H01L31/0296 ,  H01L31/032

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.

公开(公告)号：US20180138415A1

公开(公告)日：2018-05-17

申请号：US15855477

申请日：2017-12-27

Applicant: International Business Machines Corporation

Inventor： Damon B. Farmer ,  Martin M. Frank ,  Shu-Jen Han

IPC: H01L51/00 ,  H01L51/05 ,  H01L29/06

CPC classification number: H01L51/0048 ,  H01L29/0673 ,  H01L29/78684 ,  H01L51/0026 ,  H01L51/0525 ,  H01L51/0558

Abstract: Dielectric treatments for carbon nanotube devices are provided. In one aspect, a method for forming a carbon nanotube-based device is provided. The method includes: providing at least one carbon nanotube disposed on a first dielectric; removing contaminants from surfaces of the first dielectric; and depositing a second dielectric onto the first dielectric and at least partially surrounding the at least one carbon nanotube. A carbon nanotube-based device is also provided.

公开(公告)号：US09954176B1

公开(公告)日：2018-04-24

申请号：US15287342

申请日：2016-10-06

Applicant: International Business Machines Corporation

Inventor： Damon B. Farmer ,  Martin M. Frank ,  Shu-Jen Han

IPC: H01L29/06 ,  H01L29/08 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0048 ,  H01L29/0673 ,  H01L29/78684 ,  H01L51/0026 ,  H01L51/0525 ,  H01L51/0558

Abstract: Dielectric treatments for carbon nanotube devices are provided. In one aspect, a method for forming a carbon nanotube-based device is provided. The method includes: providing at least one carbon nanotube disposed on a first dielectric; removing contaminants from surfaces of the first dielectric; and depositing a second dielectric onto the first dielectric and at least partially surrounding the at least one carbon nanotube. A carbon nanotube-based device is also provided.