公开(公告)号：US12187942B2

公开(公告)日：2025-01-07

申请号：US18297033

申请日：2023-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/08 ,  C09K11/56 ,  F21V8/00 ,  G02F1/13357 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US12187939B2

公开(公告)日：2025-01-07

申请号：US18130453

申请日：2023-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12 ,  H10K59/38

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US12016241B2

公开(公告)日：2024-06-18

申请号：US17171008

申请日：2021-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Sik Yoon ,  Moon Gyu Han ,  Kwanghee Kim ,  Heejae Lee ,  Eun Joo Jang ,  Tae Hyung Kim ,  Hyo Sook Jang

IPC: H10K85/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/11 ,  H10K50/115 ,  H10K50/16 ,  H10K50/17 ,  H10K71/00 ,  H10K101/40 ,  H10K102/00

CPC classification number: H10K85/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/11 ,  H10K50/115 ,  H10K50/167 ,  H10K50/171 ,  H10K71/00 ,  H10K2101/40 ,  H10K2102/331

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

公开(公告)号：US11982018B2

公开(公告)日：2024-05-14

申请号：US18052597

申请日：2022-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: C30B29/40 ,  C01G9/08 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  C30B29/48 ,  H01L33/06 ,  H01L33/28 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C30B29/48 ,  C01G9/08 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US11958998B2

公开(公告)日：2024-04-16

申请号：US17308333

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Ha Il Kwon ,  Tae Gon Kim ,  Shang Hyeun Park ,  Eun Joo Jang ,  Shin Ae Jun ,  Garam Park

IPC: C09K11/02 ,  C08K3/16 ,  C08K3/30 ,  C08K5/09 ,  C08K5/37 ,  C08K9/04 ,  C09K11/08 ,  C09K11/56 ,  C09K11/62 ,  C09K11/88 ,  G02F1/13357 ,  H01L33/50 ,  G02F1/1335

CPC classification number: C09K11/02 ,  C08K3/16 ,  C08K3/30 ,  C08K9/04 ,  C09K11/562 ,  G02F1/1336 ,  C08K2003/168 ,  C08K2003/3036 ,  G02F1/133614

Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.

公开(公告)号：US11925044B2

公开(公告)日：2024-03-05

申请号：US17944394

申请日：2022-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho Kim ,  Won Sik Yoon ,  Jeong Hee Lee ,  Eun Joo Jang ,  Oul Cho

IPC: H10K50/115 ,  H10K50/81 ,  H10K50/84 ,  H10K59/00 ,  H10K71/00 ,  H10K102/10

CPC classification number: H10K50/115 ,  H10K50/81 ,  H10K50/84 ,  H10K71/00 ,  H10K59/00 ,  H10K2102/103

Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

公开(公告)号：US11917841B2

公开(公告)日：2024-02-27

申请号：US17123292

申请日：2020-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaejun Chang ,  Kwanghee Kim ,  Won Sik Yoon ,  Eun Joo Jang ,  Oul Cho

IPC: H10K50/115 ,  H10K50/11 ,  H10K50/15 ,  H10K101/40

CPC classification number: H10K50/115 ,  H10K50/11 ,  H10K50/15 ,  H10K2101/40

Abstract: A light-emitting device including a first electrode, a second electrode, and a light-emitting film disposed between the first electrode and the second electrode, and a method of producing the device. The light-emitting film includes a fluorine-containing organic salt, and quantum dots that do not include cadmium, lead, or a combination thereof, and the fluorine-containing organic salt includes a substituted or unsubstituted C1 to C30 hydrocarbon group, a non-metallic element, fluorine, and at least one of boron or phosphorus, and the non-metallic element includes carbon, nitrogen, oxygen, phosphorus, sulfur, or selenium.

公开(公告)号：US11910629B2

公开(公告)日：2024-02-20

申请号：US18076495

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Su Kim ,  Kun Su Park ,  Tae Ho Kim ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/52 ,  H01L27/32 ,  H10K50/115 ,  H10K50/15 ,  H10K50/155 ,  H10K71/00 ,  H10K71/13 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/15 ,  H10K50/155 ,  H10K50/156 ,  H10K71/00 ,  H10K71/135 ,  H10K2102/331

Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

公开(公告)号：US11901178B2

公开(公告)日：2024-02-13

申请号：US17187930

申请日：2021-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

Inventor： Tae Gon Kim ,  Nuri Oh ,  Tianshuo Zhao ,  Cherie Kagan ,  Eun Joo Jang ,  Christopher Murray

IPC: H01L21/02 ,  H01L29/12 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L21/02205 ,  H01L29/127 ,  H01L29/66439 ,  H01L29/66977 ,  H01L29/775

Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes:



supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and
performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

公开(公告)号：US11784282B2

公开(公告)日：2023-10-10

申请号：US16658604

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oul Cho ,  Eun Joo Jang ,  Tae Hyung Kim

IPC: H01L33/06 ,  H01L27/15 ,  H01L33/36 ,  H01L33/56

CPC classification number: H01L33/06 ,  H01L27/156 ,  H01L33/36 ,  H01L33/56

Abstract: A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.