公开(公告)号：US11495455B2

公开(公告)日：2022-11-08

申请号：US17150153

申请日：2021-01-15

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02 ,  H01L21/321 ,  B05D1/00 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/54 ,  C23C16/46 ,  C23C16/30 ,  H01L21/67 ,  B05D7/24 ,  H01L21/32

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC: H01L21/687 ,  C23C16/52 ,  C23C16/458

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US20220351974A1

公开(公告)日：2022-11-03

申请号：US17859888

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US20220349060A1

公开(公告)日：2022-11-03

申请号：US17810115

申请日：2022-06-30

Applicant: ASM IP HOLDING B.V.

Inventor： David Marquardt ,  Andrew Michael Yednak, III ,  Eric James Shero ,  Herbert Terhorst

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

公开(公告)号：US11482533B2

公开(公告)日：2022-10-25

申请号：US16789138

申请日：2020-02-12

Applicant: ASM IP Holding B.V.

Inventor： BokHeon Kim ,  David Kohen ,  Alexandros Demos

IPC: H01L27/108 ,  H01L29/94 ,  H01L27/115 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: An apparatus and a method for forming a 3-D NAND device are disclosed. The method of forming the 3-D NAND device may include forming a plug fill and a void. Advantages gained by the apparatus and method may include a lower cost, a higher throughput, little to no contamination of the device, little to no damage during etching steps, and structural integrity to ensure formation of a proper stack of oxide-nitride bilayers.

公开(公告)号：US20220319833A1

公开(公告)日：2022-10-06

申请号：US17711998

申请日：2022-04-01

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Tomomi Takayama ,  Che Chen Hsu

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse period, providing an inert gas to the reaction chamber for an inert gas pulse period, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. The inert gas can be provided during the plasma period and/or the plasma power can be pulsed to mitigate any damage to an underlying layer, while providing desired properties of the material layer.

公开(公告)号：US20220307139A1

公开(公告)日：2022-09-29

申请号：US17840960

申请日：2022-06-15

Applicant: ASM IP Holding B.V.

Inventor： Hyeongeu Kim ,  Tom Kirschenheiter ,  Eric Hill ,  Mark Hawkins ,  Loren Jacobs

IPC: C23C16/52 ,  C23C16/24 ,  C23C16/44 ,  C23C16/458

Abstract: A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

公开(公告)号：US11453943B2

公开(公告)日：2022-09-27

申请号：US15491726

申请日：2017-04-19

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34

Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

公开(公告)号：US11450529B2

公开(公告)日：2022-09-20

申请号：US17096444

申请日：2020-11-12

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Shaoren Deng ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3213

Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

公开(公告)号：US11447861B2

公开(公告)日：2022-09-20

申请号：US15380921

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.