公开(公告)号：US20240260257A1

公开(公告)日：2024-08-01

申请号：US18559083

申请日：2022-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Yuki ITO

IPC: H10B12/00 ,  H01L29/786

CPC classification number: H10B12/50 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device that can be subjected to multipoint measurement is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer includes a first multiplexer, a second multiplexer, m (m is an integer of 1 or more) analog switches electrically connected to the first multiplexer, and n (n is an integer of 1 or more) analog switches electrically connected to the second multiplexer. The second layer includes m×n transistors. Each of the m analog switches is electrically connected to n transistors, and each of the n analog switches is electrically connected to m transistors.

公开(公告)号：US20240257751A1

公开(公告)日：2024-08-01

申请号：US18560718

申请日：2022-05-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuto YAKUBO ,  Kouhei TOYOTAKA ,  Seiko INOUE ,  Yoshiyuki KUROKAWA

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2310/08 ,  G09G2330/021 ,  G09G2360/14

Abstract: A semiconductor device including a display pixel circuit and an imaging pixel circuit is provided. The semiconductor device includes first and second circuits; the first circuit includes a light-emitting device; and the second circuit includes a light-receiving device, first to fifth transistors, and a first capacitor. The light-receiving device includes first and second terminals, and the light-emitting device includes third and fourth terminals. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor, and a gate of the second transistor is electrically connected to a first terminal of the third transistor and a first terminal of the first capacitor. A second terminal of the first capacitor is electrically connected to a first terminal of the fourth transistor and a first terminal of the fifth transistor. A second terminal of the fifth transistor is electrically connected to the first terminal of the light-receiving device, the second terminal of the light-receiving device is electrically connected to the third terminal of the light-emitting device, and the fourth terminal of the light-emitting device is electrically connected to a wiring.

公开(公告)号：US20240254616A1

公开(公告)日：2024-08-01

申请号：US18633854

申请日：2024-04-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US12051703B2

公开(公告)日：2024-07-30

申请号：US17976450

申请日：2022-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kasahara

IPC: H01L27/12 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L27/1288 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  G02F1/136236 ,  G02F1/1368 ,  H10K59/1201 ,  H10K59/1213

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

公开(公告)号：US20240250183A1

公开(公告)日：2024-07-25

申请号：US18626592

申请日：2024-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66 ,  H10K59/121

CPC classification number: H01L29/7869 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/13394 ,  G02F1/134309 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78696 ,  G02F2202/10 ,  H01L21/02565 ,  H10K59/1213

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US20240250112A1

公开(公告)日：2024-07-25

申请号：US18624562

申请日：2024-04-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji KUSUNOKI ,  Shingo EGUCHI ,  Yosuke TSUKAMOTO ,  Kazunori WATANABE ,  Kouhei TOYOTAKA

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0066

Abstract: A display device with high resolution is provided. Manufacturing cost of a display device using a micro LED as a display element is reduced. The display device includes a substrate, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors are electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light to the opposite side of the substrate.

公开(公告)号：US20240248355A1

公开(公告)日：2024-07-25

申请号：US18599770

申请日：2024-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu KAWASHIMA ,  Naoto KUSUMOTO

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/136213 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1255

Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.

公开(公告)号：US12048230B2

公开(公告)日：2024-07-23

申请号：US18136665

申请日：2023-04-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake ,  Hisao Ikeda

IPC: H10K59/86 ,  G06F1/16 ,  H01K1/00 ,  H01L23/00 ,  H10K50/18 ,  H10K50/814 ,  H10K50/824 ,  H10K59/18 ,  H10K77/10 ,  H10K59/131 ,  H10K102/00

CPC classification number: H10K59/86 ,  G06F1/1652 ,  H01K1/00 ,  H01L24/50 ,  H10K50/814 ,  H10K50/824 ,  H10K59/18 ,  H10K77/111 ,  H10K59/131 ,  H10K2102/311 ,  Y02E10/549

Abstract: To provide a display device that is suitable for increasing in size, a display device in which display unevenness is suppressed, or a display device that can display an image along a curved surface. The display device includes a first display panel and a second display panel each including a pair of substrates. The first display panel and the second display panel each include a first region which can transmit visible light, a second region which can block visible light, and a third region which can perform display. The third region of the first display panel and the first region of the second display panel overlap each other. The third region of the first display panel and the second region of the second display panel do not overlap each other.

公开(公告)号：US12046604B2

公开(公告)日：2024-07-23

申请号：US17204460

申请日：2021-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1259 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  G02F1/13629 ,  G02F1/136295 ,  G02F2201/123 ,  H01L27/1222

Abstract: A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer.

公开(公告)号：US20240244882A1

公开(公告)日：2024-07-18

申请号：US18558233

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Kenichi OKAZAKI ,  Yukinori SHIMA

IPC: H10K59/12 ,  H10K59/122 ,  H10K59/35

CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K59/35

Abstract: A display device with high resolution is provided. The display device includes a light-emitting element including a first electrode, an organic compound layer, and a second electrode; a first transistor electrically connected to the first electrode; a second transistor electrically connected to a gate of the first transistor; and an insulator provided to cover an end portion of the first electrode. The first transistor contains silicon in a channel formation region. The second transistor includes an oxide semiconductor in a channel formation region. An end portion of the organic compound layer is positioned in the opening portion of the insulator.