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    Method of preparing MgB2 superconducting wire and the MgB2 superconducting wire prepared thereby
    211.
    发明授权
    Method of preparing MgB2 superconducting wire and the MgB2 superconducting wire prepared thereby 有权
    制备MgB2超导线及其制备的MgB2超导线的方法

    公开(公告)号：US08709979B2

    公开(公告)日：2014-04-29

    申请号：US13255969

    申请日：2010-07-02

    Applicant: Kook-Chae Chung ,  Tae-Hoon Kim ,  Soon-Tae Ahn ,  Bharat Sinha Bhavesh

    Inventor： Kook-Chae Chung ,  Tae-Hoon Kim ,  Soon-Tae Ahn ,  Bharat Sinha Bhavesh

    IPC: C04B35/45 ,  H01L39/24

    CPC classification number: B21C23/002 ,  B21B2003/006 ,  B21C23/08 ,  H01L39/2487

    Abstract: Disclosed herein is a method of preparing a MgB2 superconducting wire and the MgB2 superconducting wire prepared thereby. The method comprising rolling a raw powder by using a powder rolling method. According to the method of the present invention has an effect of increasing an effective area where superconducting current can flow by improvement of the connectivity of a MgB2 superconducting powder and achievement of high density through a powder rolling process, and maintaining an uniform current value even in a large length because of the improvement of the connectivity.

    Abstract translation: 本文公开了一种制备MgB 2超导线材和由此制备的MgB 2超导线材的方法。 该方法包括使用粉末轧制方法轧制原料粉末。 根据本发明的方法，通过改善MgB 2超导粉末的连通性并通过粉末轧制工艺实现高密度，从而提高超导电流可以流动的有效面积，并且即使在 由于连接性的提高，长度很大。

    Compound semiconductors and their application
    212.
    发明授权
    Compound semiconductors and their application 有权
    复合半导体及其应用

    公开(公告)号：US08703024B2

    公开(公告)日：2014-04-22

    申请号：US13616494

    申请日：2012-09-14

    Applicant: Cheol-Hee Park ,  Tae-Hoon Kim

    Inventor： Cheol-Hee Park ,  Tae-Hoon Kim

    IPC: H01B1/02

    CPC classification number: C01B19/002 ,  C01G51/006 ,  C01P2002/50 ,  C01P2006/40 ,  H01L31/032 ,  H01L35/16

    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-z-bQz, where Q is at least one selected from the group consisting of O, S, Se and Te; 0

    Abstract translation: 公开了可用于太阳能电池或作为热电材料的新型化合物半导体及其应用。 化合物半导体可以由化学式：In x Co 4-a Sb b-z-b Q z表示，其中Q是选自O，S，Se和Te中的至少一种; 0

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    213.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
    半导体存储器件及其操作方法

    公开(公告)号：US20130250698A1

    公开(公告)日：2013-09-26

    申请号：US13614382

    申请日：2012-09-13

    Applicant: Tae Hoon Kim

    Inventor： Tae Hoon Kim

    IPC: G11C16/24

    CPC classification number: G11C16/14 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26

    Abstract: A semiconductor memory device includes strings configured to include a drain select transistor, memory cells, and a source select transistor coupled in series between a bit line and a common source line and peripheral circuits configured to precharge a bit line so that the precharge level of the bit line varies depending on whether an adjacent unselected memory cell is in the program or erase states, by supplying a first voltage to the adjacent unselected memory cell arranged toward the drain select transistor, a second voltage to the remaining memory cells, and a third voltage higher than a bit line precharge voltage to the common source line and perform a read operation of supplying a read voltage lower than the second voltage to the selected memory cell, the second voltage to the remaining memory cells including the adjacent unselected memory cell, and a ground voltage to the common source line.

    Abstract translation: 半导体存储器件包括被配置为包括排列选择晶体管，存储器单元和串联耦合在位线和公共源极线之间的源极选择晶体管和被配置为对位线预充电的外围电路的串，使得 位线根据相邻未选择的存储单元是处于编程状态还是擦除状态，通过向排列选择晶体管排列的相邻未选择存储单元提供第一电压，向剩余存储单元施加第二电压，并且将第三电压 高于对公共源极线的位线预充电电压，并且执行向所选择的存储单元提供低于第二电压的读取电压的读取操作，对包括相邻未选择存储单元的剩余存储单元执行第二电压，以及 接地电压到公共源线。

    Printed circuit board and display system including the printed circuit board
    215.
    发明授权
    Printed circuit board and display system including the printed circuit board 失效
    印刷电路板和显示系统，包括印刷电路板

    公开(公告)号：US08411002B2

    公开(公告)日：2013-04-02

    申请号：US12391767

    申请日：2009-02-24

    Applicant: Bum Lee ,  Sung-Min Jang ,  Tae-Hoon Kim

    Inventor： Bum Lee ,  Sung-Min Jang ,  Tae-Hoon Kim

    IPC: G09G3/36

    CPC classification number: H05K1/0216 ,  G09G3/2092 ,  G09G2330/06 ,  G09G2370/16 ,  H05K1/0298 ,  H05K2201/093 ,  H05K2201/09663 ,  H05K2201/10128 ,  H05K2201/10189

    Abstract: A display system includes a system module, a connector connected to the system module, and a display module connected to the system module through the connector. The display module includes a liquid crystal panel which displays an image, and a first printed circuit board (“PCB”) which drives the liquid crystal panel. The first PCB includes a ground layer having a first ground region electrically connected to the display module, and a second ground region electrically isolated from the first ground region and electrically connected to the connector. The system module is configured to transmit communication signals to the display module and/or receive communication signals from the display module. The system module is further configured to transmit a noise component, which is independent of the communication signals, to the display module through the connector.

    Abstract translation: 显示系统包括系统模块，连接到系统模块的连接器以及通过连接器连接到系统模块的显示模块。 显示模块包括显示图像的液晶面板和驱动液晶面板的第一印刷电路板（PCB）。 第一PCB包括具有电连接到显示模块的第一接地区域的接地层和与第一接地区域电隔离并电连接到连接器的第二接地区域。 系统模块被配置为向显示模块发送通信信号和/或从显示模块接收通信信号。 系统模块还被配置为通过连接器将独立于通信信号的噪声分量发送到显示模块。

    COMPOUND SEMICONDUCTORS AND THEIR APPLICATION
    220.
    发明申请
    COMPOUND SEMICONDUCTORS AND THEIR APPLICATION 有权
    化合物半导体及其应用

    公开(公告)号：US20130009112A1

    公开(公告)日：2013-01-10

    申请号：US13616985

    申请日：2012-09-14

    Applicant: Cheol-Hee PARK ,  Tae-Hoon KIM

    Inventor： Cheol-Hee PARK ,  Tae-Hoon KIM

    IPC: H01B1/06 ,  H01B1/10 ,  H01B1/08

    CPC classification number: C01G53/006 ,  C01B19/002 ,  C01G51/006 ,  C01G55/002 ,  C01P2002/50 ,  C01P2002/88 ,  C01P2004/20 ,  C01P2006/32 ,  C01P2006/40 ,  H01L31/032 ,  H01L35/18

    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ′pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q′ is at least one selected from the group consisting of O, S and Se; 0

    Abstract translation: 公开了可用于太阳能电池或作为热电材料的新型化合物半导体及其应用。 化合物半导体可以由化学式：In x M y Co 4-mA m Sb 12 -n z-p X n Q'p Te z表示，其中M是选自Ca，Sr，Ba，Ti，V，Cr，Mn，Cu，Zn中的至少一种 ，Ag，Cd，Sc，Y，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu; A是选自Fe，Ni，Ru，Rh，Pd，Ir和Pt中的至少一种; X是选自Si，Ga，Ge和Sn中的至少一种; Q'是选自O，S和Se中的至少一种; 0

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