Multi-mode memory module and memory component

    公开(公告)号:US10762010B2

    公开(公告)日:2020-09-01

    申请号:US15808595

    申请日:2017-11-09

    Applicant: Rambus Inc.

    Abstract: A memory module comprises an address buffer circuit, a command/address channel, and a plurality of memory components controlled by the address buffer circuit via the command/address channel. At least one memory component comprises a plurality of data ports, a memory core to store data, and a data interface. The data interface is capable of transferring data between the memory core and the data ports. The data interface supports a first data width mode in which the data interface transfers data at a first bit width and a first burst length via the data ports. The data interface also supports a second data width mode in which the data interface transfers data at a second bit width and second burst length via the data ports. The first bit width is greater than the second bit width and the first burst length is shorter than the second burst length.

    Energy efficient storage of error-correction-detection information

    公开(公告)号:US10705912B2

    公开(公告)日:2020-07-07

    申请号:US15990078

    申请日:2018-05-25

    Applicant: Rambus Inc.

    Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.

    SYNCHRONOUS WIRED-OR ACK STATUS FOR MEMORY WITH VARIABLE WRITE LATENCY

    公开(公告)号:US20200176617A1

    公开(公告)日:2020-06-04

    申请号:US16673431

    申请日:2019-11-04

    Applicant: Rambus Inc.

    Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

    HIGH PERFORMANCE, NON-VOLATILE MEMORY MODULE
    218.
    发明申请

    公开(公告)号:US20190115059A1

    公开(公告)日:2019-04-18

    申请号:US15555470

    申请日:2016-03-11

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a memory controller via a bus. The module includes at least two non-volatile memory devices, and a buffer disposed between the pin interface and the at least two non-volatile memory devices. The buffer receives non-volatile memory access commands from the memory controller that are interleaved with DRAM memory module access commands.

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