公开(公告)号：US09820056B2

公开(公告)日：2017-11-14

申请号：US14849964

申请日：2015-09-10

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Sophie Ngo ,  Dominique Certon ,  Daniel Alquier

IPC: H03H9/54 ,  H04R19/00 ,  B06B1/02 ,  H03H9/02 ,  H03H9/48

CPC classification number: H04R19/00 ,  B06B1/0292 ,  H03H9/02228

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

公开(公告)号：US09735292B2

公开(公告)日：2017-08-15

申请号：US15055791

申请日：2016-02-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon

IPC: H01L29/15 ,  H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L23/48 ,  H01L27/02 ,  H01L27/08

CPC classification number: H01L29/872 ,  H01L23/481 ,  H01L27/0207 ,  H01L27/0814 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66212

Abstract: A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface.

公开(公告)号：US09692160B2

公开(公告)日：2017-06-27

申请号：US14956202

申请日：2015-12-01

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Edet ,  Christian Nopper

IPC: H01R12/00 ,  H01R12/71 ,  H05K1/14 ,  H01R13/66 ,  H05K1/02 ,  H05K1/18

CPC classification number: H01R12/71 ,  H01R12/716 ,  H01R13/665 ,  H05K1/0298 ,  H05K1/14 ,  H05K1/185 ,  H05K2201/047

Abstract: An electrical connector includes a frame delimiting an elongated open cavity, and having two parallel long sides provided with contact areas capable of cooperating with contact areas of a complementary electrical connector. Each long side is formed of a multilayer printed circuit board.

公开(公告)号：US09667130B2

公开(公告)日：2017-05-30

申请号：US14962008

申请日：2015-12-08

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics, Inc.

Inventor： Laurent Gonthier ,  Muriel Nina ,  Jurgis Astrauskas

IPC: H02M1/32 ,  H02M1/10 ,  H02M1/36 ,  H02H9/00 ,  H02M7/12 ,  H02M7/515

CPC classification number: H02M1/32 ,  H02H1/043 ,  H02H9/001 ,  H02H9/002 ,  H02M1/10 ,  H02M1/36 ,  H02M7/125 ,  H02M7/515 ,  H02M2001/325

Abstract: An AC/DC converter includes a first terminal and a second terminal for receiving an AC voltage and a third terminal and a fourth terminal for delivering a DC voltage. A capacitive circuit is connected between the third and fourth terminals. A rectifying bridge circuit has input terminals respectively coupled to the first and second terminals and has output terminal respectively connected to the third and fourth terminals. An inductive element is coupled in series with a first switch circuit between the first terminal and an input terminal of the rectifying bridge circuit.

公开(公告)号：US20170084482A1

公开(公告)日：2017-03-23

申请号：US15367364

申请日：2016-12-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Olivier Ory

IPC: H01L21/768 ,  H01L23/538 ,  H01L21/3065

CPC classification number: H01L21/76843 ,  H01L21/302 ,  H01L21/3043 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/78 ,  H01L23/528 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/05 ,  H01L29/0657 ,  H01L29/16 ,  H01L2224/02311 ,  H01L2224/02371 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/0556 ,  H01L2224/05571 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/94 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2924/00014

Abstract: A surface-mount chip is formed by a silicon substrate having a front surface and a side. The chip includes a metallization intended to be soldered to an external device. The metallization has a first portion covering at least a portion of the front surface of the substrate and a second portion covering at least a portion of the side of the substrate. A porous silicon region is included in the substrate to separating the second portion of the metallization from the rest of the substrate.

公开(公告)号：US20170075371A1

公开(公告)日：2017-03-16

申请号：US15363648

申请日：2016-11-29

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： BERTRAND RIVET ,  DAVID JOUVE

IPC: G05F1/613 ,  G05F1/46

CPC classification number: G05F1/613 ,  G05F1/468 ,  H03K17/102

Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较， 配置为由比较器控制。

公开(公告)号：US20170062625A1

公开(公告)日：2017-03-02

申请号：US15055791

申请日：2016-02-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon

IPC: H01L29/872 ,  H01L29/205 ,  H01L27/08 ,  H01L23/48 ,  H01L27/02 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/872 ,  H01L23/481 ,  H01L27/0207 ,  H01L27/0814 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66212

Abstract: A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface.

Abstract translation: 在硅载体上形成肖特基二极管。 非掺杂GaN层覆盖硅载体。 AlGaN层覆盖在非掺杂GaN层上。 形成欧姆接触的第一金属化和形成肖特基接触的第二金属化被提供在AlGaN层中和其上。 第一通孔从第一金属化延伸到硅支撑。 第二通孔从第二金属化延伸到上表面。

公开(公告)号：US20160372266A1

公开(公告)日：2016-12-22

申请号：US14964654

申请日：2015-12-10

Applicant: STMicroelectronics (Tours) SAS

Inventor： Sylvain Charley

IPC: H01G7/06

CPC classification number: H01G7/06 ,  G01R15/165 ,  G05F5/00 ,  H03H5/12 ,  H03H7/0153 ,  H04B1/0458

Abstract: A capacitor has a variable capacitance settable by a bias voltage. A method for setting the bias voltage including the steps of: (a) injecting a constant current to bias the capacitor; (b) measuring the capacitor voltage at the end of a time interval; (c) calculating the capacitance value obtained at the end of the time interval; (d) comparing this value with a desired value; and (e) repeating steps (a) to (d) so as long as the calculated value is different from the set point value. When calculated value matches the set point value; the measured capacitor voltage is stored as a bias voltage to be applied to the capacitor for setting the variable capacitance.

Abstract translation: 电容器具有可由偏置电压设定的可变电容。 一种用于设置偏置电压的方法，包括以下步骤：（a）注入恒定电流以偏置电容器; （b）在时间间隔结束时测量电容器电压; （c）计算在时间间隔结束时获得的电容值; （d）将该值与期望值进行比较; 并且（e）只要计算值与设定值不同，则重复步骤（a）至（d）。 当计算值与设定值相匹配时; 测量的电容器电压被存储为施加到电容器的偏置电压以设置可变电容。

公开(公告)号：US09472970B2

公开(公告)日：2016-10-18

申请号：US14222056

申请日：2014-03-21

Applicant: STMicroelectronics (Tours) SAS

Inventor： Emilien Bouyssou ,  Igor Bimbaud

IPC: H02J7/00 ,  H01M10/052 ,  H01M10/42 ,  H01M6/50 ,  H01M16/00 ,  H01M10/44 ,  H01M10/04 ,  H01M10/0562 ,  H01M6/40

CPC classification number: H02J7/007 ,  H01M6/40 ,  H01M6/5077 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/4242 ,  H01M10/44 ,  H01M10/443 ,  H01M10/486 ,  H01M16/00 ,  H02J7/0075 ,  H02J7/34 ,  Y02E60/122

Abstract: A method for managing the lifetime of a battery is disclosed herein. An ambient temperature is measured near a battery. A discharge of the battery is triggered when the ambient temperature exceeds a first temperature threshold. The battery can then be charged when the ambient temperature decreases below a second temperature threshold.

Abstract translation: 本文公开了一种用于管理电池寿命的方法。 在电池附近测量环境温度。 当环境温度超过第一温度阈值时，触发电池的放电。 当环境温度降低到低于第二温度阈值时，电池可以被充电。

公开(公告)号：US20160301298A1

公开(公告)日：2016-10-13

申请号：US14956660

申请日：2015-12-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier ,  Muriel Nina

IPC: H02M1/32 ,  H02M7/515

CPC classification number: H02M1/32 ,  H02M1/36 ,  H02M7/062 ,  H02M7/125 ,  H02M7/162 ,  H02M7/515 ,  H02M2001/325

Abstract: An AC/DC converter receives an AC voltage at a first terminal and a second terminal. A rectifying bridge has a first input terminal coupled via a resistive element to the first terminal and a second input terminal connected to the second terminal, with output terminals of the rectifying bridge coupled to third and fourth terminals of the converter for generating a DC voltage. A first controllable rectifying thyristor couples the first terminal to the third terminal and a second controllable rectifying thyristor couples the fourth terminal to the first terminal. The resistive element functions as an inrush protection device during a first phase when the thyristors are turned off. In a second phase, the thyristors are selectively actuated.

Abstract translation: AC / DC转换器在第一端子和第二端子处接收AC电压。 整流桥具有经由电阻元件耦合到第一端子的第一输入端子和连接到第二端子的第二输入端子，整流桥的输出端子耦合到转换器的第三和第四端子，用于产生直流电压。 第一可控整流晶闸管将第一端子耦合到第三端子，而第二可控整流晶闸管将第四端子耦合到第一端子。 当晶闸管关断时，电阻元件在第一阶段用作浪涌保护器件。 在第二阶段中，选择性地致动晶闸管。