公开(公告)号：US20190027655A1

公开(公告)日：2019-01-24

申请号：US16037388

申请日：2018-07-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Pindl ,  Martin Brandl

IPC: H01L33/50

Abstract: A method produces a plurality of conversion elements including: A) providing a first carrier; B) applying a first element to the first carrier using a first application technique, the first element including a conversion material, the first application technique being different from compression molding; C) applying a second element to the first carrier by a second application technique, the second element including quantum dots, the quantum dots being introduced into a matrix material and being different from the conversion material, the second application technique being molding or compression molding; D) hardening of the matrix material; E) optionally, rearranging the arrangement produced according to step D) to a second carrier; and F) separating so that a plurality of conversion elements are generated.

公开(公告)号：US20190027653A1

公开(公告)日：2019-01-24

申请号：US16071876

申请日：2017-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Franz Eberhard

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/44 ,  H01L25/167 ,  H01L27/14 ,  H01L27/14643 ,  H01L27/288 ,  H01L27/3227 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.

公开(公告)号：US10181547B2

公开(公告)日：2019-01-15

申请号：US14442394

申请日：2013-11-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Petrus Sundgren ,  Markus Broell

IPC: H01L33/00 ,  H01L21/00 ,  H01L33/14 ,  H01L33/40 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/30 ,  H01L33/38 ,  H01L33/32

Abstract: An optoelectronic semiconductor chip (1) is provided which has a semiconductor body comprising a semiconductor layer sequence (2) with an active region (20) provided for generating and/or receiving radiation, a first semiconductor region (21) of a first conduction type, a second semiconductor region (22) of a second conduction type and a cover layer (25). The active region (20) is arranged between the first semiconductor region (21) and the second semiconductor region (22) and comprises a contact layer (210) on the side remote from the active region. The cover layer (25) is arranged on the side of the first semiconductor region (21) remote from the active region (20) and comprises at least one cut-out (27), in which the contact layer (210) adjoins the first connection layer (3). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

公开(公告)号：US20190013649A1

公开(公告)日：2019-01-10

申请号：US15752442

申请日：2016-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/323 ,  H01S5/028 ,  H01S5/10 ,  H01S5/22

CPC classification number: H01S5/323 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/16 ,  H01S5/162 ,  H01S5/166 ,  H01S5/22 ,  H01S5/221

Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

公开(公告)号：US10174245B2

公开(公告)日：2019-01-08

申请号：US14891596

申请日：2014-04-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bianca Pohl-Klein ,  Daniel Bichler ,  Raquel de la Peña Alonso

IPC: C09K11/77 ,  H01L33/50

Abstract: A method for producing a luminescent material includes producing a mixture of starting substances, wherein the starting substances have a first component and a second component. The first component is selected from a group that comprises aluminum, silicon, at least one element of the 2nd main group of the periodic table and at least one element of the lanthanides and combinations thereof. The second component comprises oxygen and/or nitrogen. The method also includes annealing the mixture at a temperature of at least 1300° C. in a reducing atmosphere. After method the annealing, at least one or several phases are obtained. At least one phase comprises a luminescent material. The luminescent material absorbs at least a portion of an electromagnetic primary radiation in the UV or blue range and emits an electromagnetic secondary radiation with an emission maximum of greater than or equal to 600 nm.

公开(公告)号：US20190006562A1

公开(公告)日：2019-01-03

申请号：US15745240

申请日：2016-07-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Jurgen Moosburger ,  Lutz Hoppel ,  Markus Maute ,  Thomas Schwarz ,  Matthias Sabathil ,  Ralph Wirth ,  Alexander Linkov

IPC: H01L33/42

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

公开(公告)号：US20180358512A1

公开(公告)日：2018-12-13

申请号：US15542935

申请日：2015-12-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Norwin von Malm

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/382 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

公开(公告)号：US20180351058A1

公开(公告)日：2018-12-06

申请号：US15991271

申请日：2018-05-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ralf Mueller ,  Ralf Staub ,  Christian Ziereis

IPC: H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L27/15 ,  H01L33/00

Abstract: An optoelectronic component includes a reflective material, wherein the reflective material includes a surface, at least one optoelectronic semiconductor chip is embedded into the reflective material such that at least a top side of the optoelectronic semiconductor chip, the top side being configured to emit electromagnetic radiation and is not covered by the reflective material, the surface of the reflective material is formed in a manner extending parallel to the top side of the optoelectronic semiconductor chip and facing away from an underside of the optoelectronic semiconductor chip, the surface of the reflective material includes a contrast region, and the reflective material is superficially removed in the contrast region.

公开(公告)号：US20180351046A1

公开(公告)日：2018-12-06

申请号：US15778416

申请日：2016-11-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Wolfgang Schmid

IPC: H01L33/44 ,  H01L33/46 ,  H01L33/30 ,  H01L33/22

CPC classification number: H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44

Abstract: An LED chip includes a carrier, a semiconductor layer sequence, a reflective layer sequence arranged in regions between the carrier and the semiconductor layer sequence, wherein the reflective layer sequence includes a dielectric layer facing the semiconductor layer sequence and a metallic mirror layer facing away from the semiconductor layer sequence, and an encapsulating layer arranged in places between the carrier and the reflective layer sequence, the encapsulating layer extending in places through the reflective layer sequence into the semiconductor layer sequence and thus forming a separating web separating an inner region of the reflective layer sequence from an edge region of the reflective layer sequence.

公开(公告)号：US10141483B2

公开(公告)日：2018-11-27

申请号：US15549364

申请日：2016-01-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Elmar Baur ,  Reiner Windisch ,  Frank Baumann

IPC: H01L33/50 ,  C09K11/08 ,  C09K11/77 ,  C09K11/64 ,  F21K9/23 ,  H01L25/075

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.