公开(公告)号：US20070104294A1

公开(公告)日：2007-05-10

申请号：US11518218

申请日：2006-09-11

Applicant: Tae-Hoon Kim ,  Seung-Hyun Choi ,  Cheon-In Oh ,  Pan-Soo Kim ,  Dae-Ig Chang

Inventor： Tae-Hoon Kim ,  Seung-Hyun Choi ,  Cheon-In Oh ,  Pan-Soo Kim ,  Dae-Ig Chang

IPC: H04L27/22

CPC classification number: H04L27/183

Abstract: An apparatus for independently extracting streams from a hierarchically-modulated signal and performing a soft-decision, and a method thereof are provided. The apparatus includes: a synchronizing unit for receiving a hierarchically-modulated signal configured of an I-channel signal and a Q-channel signal from an external device and performing a synchronizing process on the received signal; a divaricating unit 410 for divaricating the synchronized signal configured of the I-channel signal and the Q-channel signal from the synchronizing unit; a high priority (HP) stream extracting and soft-decision unit for extracting a HP stream from one of the divaricated signals, and performing a soft-decision; a processing unit for processing the other of the divaricated signals to allow constellation points to be distinguished; and a low priority (LP) stream extracting and soft-decision unit for extracting a LP stream from the processed signal from the processing unit and performing a soft-decision.

Abstract translation: 提供一种用于从分层调制信号独立地提取流并执行软判决的装置及其方法。 该装置包括：同步单元，用于从外部装置接收由I信道信号和Q信道信号构成的分层调制信号，并对接收信号执行同步处理; 分离单元410，用于将由I信道信号构成的同步信号和来自同步单元的Q信道信号进行分解; 用于从分离信号中的一个提取HP流的高优先级（HP）流提取和软判决单元，并执行软判决; 处理单元，用于处理所述分离信号中的另一个以允许区分星座点; 以及用于从处理单元处理的信号中提取LP流并执行软判决的低优先级（LP）流提取和软判决单元。

公开(公告)号：US20070052001A1

公开(公告)日：2007-03-08

申请号：US11502426

申请日：2006-08-11

Applicant: Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

Inventor： Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

IPC: H01L29/76

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

Abstract: A nonvolatile semiconductor memory device and a method of fabricating the same are provided. The nonvolatile memory device may include a switching device and a storage node connected to the switching device. The storage node may comprise a lower electrode, a data storing layer, and an upper electrode. The data storing layer may include a first region where a current path is formed at a first voltage, and a second region surrounding the first region where a current path is formed at a second voltage, greater than the first voltage. The first region may be positioned to contact the upper electrode and the lower electrode.

Abstract translation: 提供一种非易失性半导体存储器件及其制造方法。 非易失性存储器件可以包括连接到开关器件的开关器件和存储节点。 存储节点可以包括下电极，数据存储层和上电极。 数据存储层可以包括在第一电压处形成电流路径的第一区域和围绕第一区域的第二区域，其中电流路径形成在大于第一电压的第二电压处。 第一区域可以被定位成接触上电极和下电极。

公开(公告)号：US20060241277A1

公开(公告)日：2006-10-26

申请号：US11324953

申请日：2006-01-04

Applicant: Moon-kyoon Chun ,  Tae-hoon Kim ,  Chan-hong Lee ,  Jae-il Roh

Inventor： Moon-kyoon Chun ,  Tae-hoon Kim ,  Chan-hong Lee ,  Jae-il Roh

IPC: C08G73/00

CPC classification number: C08F8/32 ,  C08F212/00

Abstract: The present invention relates to a method for preparing an imide substituted copolymer resin comprising the steps of: copolymerization by feeding a mixture of an aromatic vinyl monomer and a vinyl cyanide monomer, a mixture of an unsaturated dicarboxylic anhydride monomer and a solvent, an initiator and a chain transfer agent at once to a copolymerization reactor; and imide substitution by continuously feeding the resultant polymerization solution to an imide substitution reactor while continuously feeding a primary amine. The preparation method according to the present invention is capable of continuously preparing an imide substituted copolymer resin having superior heat resistance and excellent fluidity and improving mechanical property and compatibility with ABS resin by inhibiting formation of aromatic vinyl homopolymer.

Abstract translation: 本发明涉及一种制备酰亚胺取代共聚树脂的方法，包括以下步骤：通过将芳族乙烯基单体和乙烯基氰单体的混合物，不饱和二羧酸酐单体和溶剂的混合物，引发剂和 一个链转移剂一次到共聚反应器; 并通过将所得聚合溶液连续供给到酰亚胺取代反应器中而连续进料伯胺进行酰亚胺取代。 根据本发明的制备方法能够通过抑制芳族乙烯基均聚物的形成，连续地制备具有优异的耐热性和优异的流动性并提高机械性能和与ABS树脂的相容性的酰亚胺取代的共聚物树脂。

公开(公告)号：US07064678B2

公开(公告)日：2006-06-20

申请号：US10048654

申请日：2001-06-02

Applicant: Jae Min Kim ,  Tae Hoon Kim

Inventor： Jae Min Kim ,  Tae Hoon Kim

IPC: G08C17/00

CPC classification number: G01F15/063 ,  G01D4/004 ,  G01D4/008 ,  G08C17/02 ,  Y02B90/242 ,  Y02B90/247 ,  Y04S20/322 ,  Y04S20/50

Abstract: The present invention discloses a wireless terminal for checking the amount used of gauge and a gauge management system using a wireless communication network which checks the amount used of electricity, tap water, and gas by a wireless terminal. A wireless terminal established in a front of gauge, senses image of a figure at gauge, transmit data of the amount used with a wireless communication network. So, management of collecting rates of electricity, tap water, and gas are achieved easily.

公开(公告)号：US20060062330A1

公开(公告)日：2006-03-23

申请号：US10536755

申请日：2003-06-25

Applicant: Hong-Seok Seo ,  Tae-Hoon Kim

Inventor： Hong-Seok Seo ,  Tae-Hoon Kim

IPC: H03D1/24

CPC classification number: H04L25/061 ,  H04L27/38 ,  H04L27/389

Abstract: The invention relates to a hard decision demodulation of a square type of a quadrature amplitude modulation signal, in particular, to a hard decision demodulation method and apparatus capable of performing fast and accurate demodulation, by demodulating a received signal in bit unit when demodulating it. In a hard decision demodulation method of a square type of quadrature amplitude modulation signal, by determining in bit unit, not in symbol unit a corresponding output value from a quadrature phase component value and an in-phase component value, it is possible to develop a more useful demodulation technique and to give a secondary function by independently processing each bit, according to the demodulation of bit unit. Further, the invention can be constituted of merely a comparison circuit without having arithmetic in demodulation process, and therefore, can enhance flexibility of actual configuration and processing speed.

Abstract translation: 本发明涉及一种正方形正交幅度调制信号的硬判决解调，特别涉及一种能够通过解调接收到的以位为单位的接收信号进行解调的硬判决解调方法和装置，能够进行快速，准确的解调。 在正方形正交幅度调制信号的硬判决解调方法中，通过以比特为单位，以符号单位确定来自正交相位分量值和同相分量值的相应输出值，可以形成 更有用的解调技术，并根据比特单元的解调，通过独立处理每个比特来提供二次功能。 此外，本发明可以仅由比较电路构成，而不需要在解调过程中进行运算，因此可以提高实际配置和处理速度的灵活性。

公开(公告)号：US20060034392A1

公开(公告)日：2006-02-16

申请号：US10536756

申请日：2004-01-10

Applicant: Hong-Seok Seo ,  Tae-Hoon Kim

Inventor： Hong-Seok Seo ,  Tae-Hoon Kim

IPC: H04L27/16

CPC classification number: H04L25/067 ,  H04L27/38

Abstract: The present invention relates to a demodulation method using soft decision for QAM (Quadrature Amplitude Modulation). In a soft decision method for demodulation of a received signal of square QAM comprised of the same phase signal component and a orthogonal phase signal component, the demodulation method using soft decision has a characteristic wherein the processing speed is improved, and the manufacturing expense is reduced by gaining a condition probability vector value, which is each soft decision value, corresponding to a beat position of hard decision using a function which includes a condition judgement operation from a orthogonal phase component value of a received signal and the same phase component value.

Abstract translation: 本发明涉及使用QAM（正交幅度调制）的软判决的解调方法。 在用于解调由相同相位信号分量和正交相位信号分量组成的平方QAM的接收信号的软判决方法中，使用软判决的解调方法具有提高处理速度并降低制造费用的特性 通过使用包括来自接收信号的正交相位分量值的条件判断操作和相同相位分量值的函数获得对应于硬判决的节拍位置的每个软判决值的条件概率向量值。

公开(公告)号：US20060029726A1

公开(公告)日：2006-02-09

申请号：US10948875

申请日：2004-09-24

Applicant: Jee-Soo Mok ,  Byung-Kook Sun ,  Chang-Kyu Song ,  Jun-Heyoung Park ,  Duck-Young Maeng ,  Tae-Hoon Kim

Inventor： Jee-Soo Mok ,  Byung-Kook Sun ,  Chang-Kyu Song ,  Jun-Heyoung Park ,  Duck-Young Maeng ,  Tae-Hoon Kim

IPC: H01K3/10

CPC classification number: H05K3/462 ,  H05K3/0035 ,  H05K3/4069 ,  H05K3/4623 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/096 ,  H05K2203/0191 ,  Y10T29/49165

Abstract: Disclosed is a method of fabricating a multilayer PCB (MLB). More particularly, the present invention relates to a method of fabricating a multilayer PCB, in which plural circuit layers having insulating layers attached thereto and another circuit layer having no insulating layer are formed in a parallel manner according to separate processes, and laminated at one time, unlike fabrication of the multilayer PCB adopting a conventional build-up manner.

Abstract translation: 公开了一种制造多层PCB（MLB）的方法。 更具体地，本发明涉及一种制造多层PCB的方法，其中根据单独的工艺以平行方式形成具有附着绝缘层的多个电路层和不具有绝缘层的另一个电路层，并且一次叠层 不同于采用常规积聚方式的多层PCB的制造。

公开(公告)号：US06930356B2

公开(公告)日：2005-08-16

申请号：US10464059

申请日：2003-06-17

Applicant: Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

Inventor： Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L31/119

CPC classification number: H01L29/7802 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7395

Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

Abstract translation: 根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。 第一漂移区域具有比半导体衬底更低的杂质浓度。 第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。 第二导电类型的多个条形体区域形成在第二漂移区域的上部。 第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。 栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分 地区。

公开(公告)号：US06670206B2

公开(公告)日：2003-12-30

申请号：US10119725

申请日：2002-04-11

Applicant: Tae Hoon Kim ,  Chan Wang Park ,  Joo Hun Park ,  Jae Myung Kim

Inventor： Tae Hoon Kim ,  Chan Wang Park ,  Joo Hun Park ,  Jae Myung Kim

IPC: H01L2100

CPC classification number: H01L21/561 ,  H01L21/563 ,  H01L24/29 ,  H01L24/97 ,  H01L2224/73203 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/181 ,  H01L2924/3025 ,  H03H3/08 ,  H03H9/02913 ,  H03H9/059 ,  H03H9/1078 ,  H03H9/1085 ,  H01L2924/00

Abstract: Disclosed is a method for simply fabricating plural surface acoustic wave filter chip packages in large quantities comprising the steps of providing a wafer, on the surface of which plural surface acoustic wave filter chips are formed, and a package substrate, on the surface of which mounting portions corresponding to surface acoustic wave filter chips are formed; providing underfill on the package substrate; mounting the wafer on the package substrate; removing wafer portions between surface acoustic wave filter chips; forming metal shield layers on outer walls of separated surface acoustic wave filter chips; molding a resin on outer walls of surface acoustic wave filter chips coated with metal layers; and dividing the package substrate molded with resin into individual surface acoustic wave filter chip packages.

公开(公告)号：US06664595B1

公开(公告)日：2003-12-16

申请号：US09533816

申请日：2000-03-24

Applicant: Chong-man Yun ,  Tae-hoon Kim

Inventor： Chong-man Yun ,  Tae-hoon Kim

IPC: H01L2976

CPC classification number: H01L29/7802 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/66712

Abstract: A power MOSFET is provided. In this power MOSFET, a drift region is formed on a drain region having the same conductivity type as that of the drain region using a semiconductor substrate of a first conductivity type. A gate electrode is formed on the drift region, having a plurality of openings spaced apart from each other by a predetermined distance. The plurality of openings partially expose the drift region, and a gate insulating layer is interposed between the gate electrode and the drift region. A body region of a second conductivity type opposite to the first conductivity type is formed on a predetermined upper region of the drift region and extends from the opening to have a side overlapped by the gate electrode. A channel in the portion of the body region overlapped by the gate electrode is not formed and is adjacent to at least two facing sides of the opening. A source region is formed in the body region, including a first source region shaped in the form of a strip, the first source region contacting a portion where a channel is formed, and a second source region connecting the first source regions facing to each other. Also, a source electrode is electrically connected to the source region, and a drain electrode is electrically connected to the drain region.

Abstract translation: 提供功率MOSFET。 在该功率MOSFET中，使用第一导电类型的半导体衬底，在具有与漏区相同的导电类型的漏区上形成漂移区。 栅电极形成在漂移区上，具有彼此隔开预定距离的多个开口。 多个开口部分地暴露漂移区域，并且栅极绝缘层插入在栅极电极和漂移区域之间。 在漂移区域的预定的上部区域上形成与第一导电类型相反的第二导电类型的体区，并且从开口延伸以与栅电极重叠。 与栅电极重叠的体区的部分中的通道不形成并且与开口的至少两个相对的侧相邻。 源区域形成在主体区域中，包括形成为带状的第一源极区域，与形成沟道的部分接触的第一源极区域和连接彼此面对的第一源极区域的第二源极区域 。 另外，源电极与源区电连接，漏电极与漏极区电连接。