公开(公告)号：US6115319A

公开(公告)日：2000-09-05

申请号：US23880

申请日：1998-02-13

Applicant: Yoshitaka Kinoshita ,  Kenji Nishimoto ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

Inventor： Yoshitaka Kinoshita ,  Kenji Nishimoto ,  Kazumasa Yanagisawa ,  Hitoshi Tanaka

IPC: G11C11/407 ,  G11C7/10 ,  G11C8/08 ,  G11C11/401 ,  G11C11/408 ,  G11C8/18

CPC classification number: G11C11/4085 ,  G11C7/1072 ,  G11C8/08

Abstract: A bootstrap circuit is provided for a word line selector for setting word lines connected with dynamic memory cells at a select level corresponding to a first voltage and a nonselect level corresponding to a second voltage. The bootstrap circuit generates a bootstrap voltage which is given a difference substantially equal to the threshold voltage of address select MOSFETs with respect to the high level of bit lines connected with the memory cells, and feeds the bootstrap voltage to the selected word lines. The bootstrap circuit is activated in synchronism with a clock signal at a timing corresponding to an action mode designated by a command in an SDRAM before a precharge action, thereby changing the select level of the word lines from the first voltage to the bootstrap voltage.

Abstract translation: 提供了一种用于字线选择器的引导电路，用于将与动态存储单元相连的字线设置在对应于与第二电压对应的第一电压和非选择电平的选择电平。 引导电路产生自举电压，该自举电压相对于与存储器单元连接的高电平位线给予基本上等于地址选择MOSFET的阈值电压的差值，并将自举电压馈送到所选择的字线。 引导电路在与预充电动作之前的SDRAM中由命令指定的动作模式对应的定时与时钟信号同步地激活，从而将字线的选择电平从第一电压改变为自举电压。

公开(公告)号：US6071780A

公开(公告)日：2000-06-06

申请号：US285778

申请日：1999-04-05

Applicant: Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

Inventor： Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/335 ,  H01L21/336 ,  H01L29/51

CPC classification number: H01L29/517 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/314 ,  H01L21/31604 ,  H01L29/66446 ,  H01L29/66522

Abstract: An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped G&As layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.

Abstract translation: 在GaAs半导体衬底上依次形成未掺杂的GaAs层和GaAs有源层，GaAs活性层的表面失活。 然后，在分子束外延装置中，将由GaAs半导体衬底，未掺杂的G＆As层和GaAs有源层构成的晶片在570〜580℃的温度下退火。 此后，将晶片保持在350〜500℃的温度范围内，在GaAs活性层上形成由非晶GaAs形成的绝缘层，同时使用叔丁基硫化镓 - 立方体“（（t-Bu） GaS）4“作为绝缘层的源。 此后，根据光刻法将绝缘层图案化，以在GaAs有源层上形成栅极绝缘层。 然后，在栅极绝缘层的两侧形成源电极和漏电极，在GaAs有源层上排列相互分离的源电极和漏电极，在栅极绝缘层上形成栅电极。

公开(公告)号：US6008495A

公开(公告)日：1999-12-28

申请号：US927817

申请日：1997-09-11

Applicant: Hitoshi Tanaka ,  Yoshihisa Ooae

Inventor： Hitoshi Tanaka ,  Yoshihisa Ooae

IPC: H01L21/027 ,  G03F7/20 ,  G21K5/04 ,  H01J37/09 ,  G21K1/02 ,  G21K5/08

CPC classification number: G21K5/04 ,  H01J37/09 ,  H01J2237/0456 ,  H01J2237/3175

Abstract: An electron beam exposure device in which an electron beam from an electron beam source is passed through at least a slit of a first slit assembly. The first slit assembly includes: a base; a bearing assembly; a stage rotatably supported by the base via the bearing assembly; a stage rotation adjusting mechanism; a slit member; and at least one heat transfer path means for transferring heat of the stage to the base, wherein the at least one heat transfer path means enables the rotation of the stage by the stage rotation adjusting mechanism.

Abstract translation: 电子束曝光装置，其中来自电子束源的电子束至少穿过第一狭缝组件的狭缝。 第一缝合组件包括：基部; 轴承组件; 通过所述轴承组件由所述基座可旋转地支撑的台架; 舞台旋转调节机构; 狭缝构件; 以及至少一个热传递路径装置，用于将载物台的热传递到底座，其中至少一个热传递路径装置使得能够通过平台旋转调节机构旋转平台。

公开(公告)号：US5981118A

公开(公告)日：1999-11-09

申请号：US42747

申请日：1998-03-17

Applicant: Nobuyuki Yasutake ,  Yoshihisa Ooae ,  Kazushi Ishida ,  Hiroshi Yasuda ,  Akiyoshi Tsuda ,  Hitoshi Tanaka

Inventor： Nobuyuki Yasutake ,  Yoshihisa Ooae ,  Kazushi Ishida ,  Hiroshi Yasuda ,  Akiyoshi Tsuda ,  Hitoshi Tanaka

IPC: G03F7/20 ,  H01J37/317 ,  G03F9/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2037 ,  G03F7/2065 ,  H01J37/3174 ,  H01J2237/31774

Abstract: With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.

Abstract translation: 通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。 测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。 阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。 这些偏差由偏转器18A至18D校正。

公开(公告)号：US5920105A

公开(公告)日：1999-07-06

申请号：US16419

申请日：1998-01-30

Applicant: Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

Inventor： Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/335 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/314 ,  H01L21/31604 ,  H01L29/66446 ,  H01L29/66522

Abstract: An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped GaAs layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.

Abstract translation: 在GaAs半导体衬底上依次形成未掺杂的GaAs层和GaAs有源层，GaAs活性层的表面失活。 此后，在分子束外延装置中，将由GaAs半导体衬底，未掺杂的GaAs层和GaAs有源层组成的晶片在570〜580℃的温度下退火。 此后，将晶片保持在350〜500℃的温度范围内，在GaAs活性层上形成由非晶GaAs形成的绝缘层，同时使用叔丁基硫化镓 - 立方体“（（t-Bu） GaS）4“作为绝缘层的源。 此后，根据光刻法将绝缘层图案化，以在GaAs有源层上形成栅极绝缘层。 然后，在栅极绝缘层的两侧形成源电极和漏电极，在GaAs有源层上排列相互分离的源电极和漏电极，在栅极绝缘层上形成栅电极。

公开(公告)号：US5797717A

公开(公告)日：1998-08-25

申请号：US622148

申请日：1996-03-27

Applicant: Hitoshi Tanaka ,  Shunji Fujita

Inventor： Hitoshi Tanaka ,  Shunji Fujita

IPC: F24F11/02 ,  G05D23/19 ,  F04B49/00

CPC classification number: G05D23/1905 ,  F24F11/0079 ,  Y02B30/746

Abstract: A contactless output section makes a circuit including a fan motor and an ac power source when a receive portion receives a command signal. A diode bridge and a direct current regulated circuit smooth and regulate dc current. An operation part is provided with power from the direct current regulated circuit, compares a measured temperature with a set temperature, and generates and provides a command signal for the receive portion of the contactless output section.

Abstract translation: 当接收部分接收到命令信号时，非接触式输出部分构成包括风扇马达和交流电源的电路。 二极管桥和直流调节电路平滑调节直流电流。 操作部分由直流调节电路供电，将测得的温度与设定温度进行比较，并产生并提供无接触输出部分接收部分的指令信号。

公开(公告)号：US5701208A

公开(公告)日：1997-12-23

申请号：US540539

申请日：1995-10-06

Applicant: Norio Sato ,  Hitoshi Tanaka

Inventor： Norio Sato ,  Hitoshi Tanaka

IPC: G02B7/04 ,  G02B7/10 ,  G02B7/02

CPC classification number: G02B7/10

Abstract: A driving apparatus for a zoom lens barrel has a driving ring for moving a lens system and a mechanism for movably supporting the driving ring for movement along an optical axis of the lens system. A gear train is supported by the supporting mechanism, a power source is provided in a camera body, and a mechanism for transmitting torque generated by the power source to the driving ring is provided. The torque transmitting mechanism includes the gear train, and a mechanism for disconnecting the torque transmission path from the power source to the driving ring if a torque above a predetermined value is applied to the driving ring. The disconnection mechanism is disposed in the gear train and is supported by the supporting mechanism.

Abstract translation: 用于变焦镜头的驱动装置具有用于移动透镜系统的驱动环和用于可移动地支撑驱动环以沿着透镜系统的光轴移动的机构。 齿轮系被支撑机构支撑，电源设置在照相机主体中，并且设置有用于将由电源产生的扭矩传递到驱动环的机构。 扭矩传递机构包括齿轮系，以及用于如果将高于预定值的扭矩施加到驱动环上，则将扭矩传递路径从动力源驱动到驱动环的机构。 断路机构设置在齿轮系中，由支承机构支承。

公开(公告)号：US5677880A

公开(公告)日：1997-10-14

申请号：US407850

申请日：1995-03-21

Applicant: Masashi Horiguchi ,  Jun Etoh ,  Masakazu Aoki ,  Yoshinobu Nakagome ,  Hitoshi Tanaka ,  Kiyoo Itoh

Inventor： Masashi Horiguchi ,  Jun Etoh ,  Masakazu Aoki ,  Yoshinobu Nakagome ,  Hitoshi Tanaka ,  Kiyoo Itoh

IPC: G11C11/413 ,  G11C5/14 ,  G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  H01L21/82 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  G11C7/00

CPC classification number: G11C29/83 ,  G11C29/832 ,  G11C5/14

Abstract: In a semiconductor memory, switch circuits are provided so as to inhibit voltage and signal supplies to each of the normal memory blocks when so required. On the other hand, a ROM is provided on the chip so as to store the address of a defective memory block which consumes an excessively large stand-by current when the semiconductor memory is in the stand-by mode. The switch circuits are controlled by the output of the ROM so as to inhibit the voltage and signal supply to the defective memory block. Then, a spare memory block which is substituted for the defective normal memory block receives the voltage and signal supply.

Abstract translation: 在半导体存储器中，提供开关电路，以便当需要时，禁止向每个正常存储器块提供电压和信号。 另一方面，在半导体存储器处于待机模式时，在芯片上提供ROM以存储消耗过大待机电流的缺陷存储块的地址。 开关电路由ROM的输出控制，以便阻止向缺陷存储器块提供电压和信号。 然后，代替有缺陷的正常存储块的备用存储块接收电压和信号供应。

公开(公告)号：US5668133A

公开(公告)日：1997-09-16

申请号：US445850

申请日：1995-05-22

Applicant: John M. Yanni ,  Stella M. Robertson ,  Shigetoshi Okumura ,  Hitoshi Tanaka ,  Tadayuki Saito

Inventor： John M. Yanni ,  Stella M. Robertson ,  Shigetoshi Okumura ,  Hitoshi Tanaka ,  Tadayuki Saito

IPC: A61K31/50

CPC classification number: A61K31/551 ,  Y10S514/912

Abstract: Topical ophthalmic compositions comprising 1-(2-ethoxyethyl)-2-(4-methyl-1-homopiperazinyl)-benzimidazole and its ophthalmically acceptable acid addition salts have been found to be useful in treating ocular allergies, especially allergic conjunctivitis, giant papillary conjunctivitis, and vernal conjunctivitis.

Abstract translation: 已经发现包含1-（2-乙氧基乙基）-2-（4-甲基-1-高哌嗪基） - 苯并咪唑及其眼用可接受的酸加成盐的局部眼用组合物可用于治疗眼部过敏，特别是过敏性结膜炎，巨大乳头状结膜炎 ，和春季结膜炎。

公开(公告)号：US5654837A

公开(公告)日：1997-08-05

申请号：US634261

申请日：1996-04-18

Applicant: Hitoshi Tanaka

Inventor： Hitoshi Tanaka

IPC: G02B7/09 ,  G02B7/04 ,  G02B7/10 ,  G02B7/02

CPC classification number: G02B7/102

Abstract: A zoom lens barrel of a camera has an outer ring and an inner ring located inside the outer ring. The inner ring moves relative to the outer ring during zooming. A brush holder having zoom brushes at both ends is supported by one of the inner and outer rings. The zoom brushes are made of an elastic conductive material. Zoom brushes provided at one end of the brush holder come into slidable contact with a zoom code plate, which is supported by the one of the inner and outer rings that does not support the brush holder. Zoom brushes, provided at the other end of the brush holder, contact brush contacting terminals of a flexible printed circuit board. A contact reaction force is created between the zoom brushes, the zoom code plate and the flexible printed circuit board, which provides bias force to press the brush holder against one of the inner or outer rings.

Abstract translation: 相机的变焦镜筒具有位于外圈内部的外圈和内圈。 内圈在变焦过程中相对于外圈移动。 在两端具有变焦刷的刷架由内圈和外圈中的一个支撑。 变焦刷由弹性导电材料制成。 设置在电刷架一端的变焦刷可与变焦代码板滑动接触，该变焦代码板由不支撑电刷架的内圈和外圈之一支撑。 设置在电刷架另一端的变焦刷接触柔性印刷电路板的刷子接触端子。 在变焦刷，变焦代码板和柔性印刷电路板之间产生接触反作用力，其提供偏压力以将刷保持器压靠在内环或外环中。