公开(公告)号：US11682726B2

公开(公告)日：2023-06-20

申请号：US17159166

申请日：2021-01-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Yu Yang ,  Shin-Hung Li ,  Nien-Chung Li ,  Chang-Po Hsiung

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7824 ,  H01L29/0649 ,  H01L29/1079 ,  H01L29/517 ,  H01L29/66689

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

公开(公告)号：US11676823B2

公开(公告)日：2023-06-13

申请号：US17485541

申请日：2021-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Hsun Tsai

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: H01L21/31105 ,  H01L21/02107 ,  H01L21/31144 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/1237

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a first gate oxide layer on the first region, the second region, and the third region; and performing an etching process and an infrared treatment process at the same time to completely remove the first gate oxide layer on the second region for exposing the substrate.

公开(公告)号：US11670567B2

公开(公告)日：2023-06-06

申请号：US16924206

申请日：2020-07-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Liang Liao ,  Purakh Raj Verma ,  Ching-Yang Wen ,  Chee Hau Ng

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/15

CPC classification number: H01L23/3735 ,  H01L21/4871 ,  H01L23/15 ,  H01L23/3736

Abstract: A semiconductor structure includes a glass substrate and a device wafer. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device wafer includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.

公开(公告)号：US11664426B2

公开(公告)日：2023-05-30

申请号：US17685400

申请日：2022-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US11664425B2

公开(公告)日：2023-05-30

申请号：US17580622

申请日：2022-01-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shi-You Liu ,  Tsai-Yu Wen ,  Ching-I Li ,  Ya-Yin Hsiao ,  Chih-Chiang Wu ,  Yu-Chun Liu ,  Ti-Bin Chen ,  Shao-Ping Chen ,  Huan-Chi Ma ,  Chien-Wen Yu

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/324 ,  H01L21/265 ,  H01L21/8234

CPC classification number: H01L29/105 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26533 ,  H01L21/324 ,  H01L21/823412 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/7833

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

公开(公告)号：US11664366B2

公开(公告)日：2023-05-30

申请号：US17481300

申请日：2021-09-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Cheng Tung

IPC: H01L21/8238 ,  H01L27/02 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L27/0207 ,  H01L21/82385 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/785 ,  H10B10/12

Abstract: A layout of a semiconductor device and a method of forming a semiconductor device, the semiconductor device include a first fin and a second fin disposed on a substrate, a gate and a spacer. The first fin and the second fin both include two opposite edges, and the gate completely covers the two opposite edges of the first fin and only covers one sidewall of the two opposite edges of the second fin. The spacer is disposed at two sides of the gate, and the spacer covers another sidewall of the two opposite edges of the second fin.

公开(公告)号：US11662658B2

公开(公告)日：2023-05-30

申请号：US17128246

申请日：2020-12-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： You-Ming Ke

IPC: G03F1/36 ,  G03F1/38 ,  G03F7/20 ,  H01L21/027 ,  G03F7/00

CPC classification number: G03F1/38 ,  G03F1/36 ,  G03F7/0002 ,  H01L21/0274

Abstract: A photo-mask and a semiconductor process are provided. The photo-mask includes a substrate and a non-printable pattern on the substrate. A pattern size of the non-printable pattern is smaller than a critical resolution of a lithography equipment using the photo-mask to perform a lithography process.

公开(公告)号：US11658223B2

公开(公告)日：2023-05-23

申请号：US17073410

申请日：2020-10-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang

IPC: H01L29/792 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/4234 ,  H01L29/66833 ,  H01L29/792

Abstract: A semiconductor structure includes a substrate, an insulating layer disposed on the substrate, an active layer disposed on the insulating layer, a first semiconductor device formed in a first device region of the active layer, a charge trap structure through the active layer and surrounding the first device region, and a charge trap layer between the insulating layer and the substrate and extending laterally to underlie the first device region and the charge trap structure.

公开(公告)号：US11658087B2

公开(公告)日：2023-05-23

申请号：US17080858

申请日：2020-10-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Purakh Raj Verma ,  Kuo-Yuh Yang ,  Chia-Huei Lin

IPC: H01L23/367 ,  H01L21/48

CPC classification number: H01L23/367 ,  H01L21/4803

Abstract: A high resistivity wafer with a heat dissipation structure includes a high resistivity wafer and a metal structure. The high resistivity wafer includes a heat dissipation region and a device support region. The high resistivity wafer consists of an insulating material. The metal structure is only embedded within the heat dissipation region of the high resistivity wafer. The metal structure surrounds the device support region.

公开(公告)号：US20230145175A1

公开(公告)日：2023-05-11

申请号：US18092916

申请日：2023-01-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wei Chang ,  Yao-Hsien Chung ,  Shih-Wei Su ,  Hao-Hsuan Chang ,  Da-Jun Lin ,  Ting-An Chien ,  Bin-Siang Tsai

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7786

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from that of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed on the gate.