Abstract:
A circuit comprises a section generating a pulse signal for asynchronously enabling the read phases; a section generating precharge and detecting signals of adjustable duration, for controlling data reading from the memory and data supply to the output buffers; a section generating a noise suppressing signal for freezing the data in the output buffers during loading into the output circuits, and the duration of which is exactly equal to the propagation time of the data to the output circuits of the memory, as determined by propagating a data simulating signal in an output simulation circuit; a section generating a loading signal, the duration of which may be equal to that of the noise suppressing signal or extended by an extension circuit in the event the array presents slower elements which may thus be read; and a section generating a circuit reset signal.
Abstract:
The invention relates to a method and circuit for implementing an impedance associated with a monolithically integrated telephone subscriber circuit connected to a telephone line having a pair of terminals. The circuit consists of a resistor connected serially to one terminal of the telephone line, and a series of current mirror circuits. The current mirror circuits are connected in a closed loop configuration to the one terminal of the telephone line. The current mirror circuits divide, by a predetermined factor, the value of the resistor when a DC or very low frequency signal is input to the telephone circuit.
Abstract:
A finite-state machine has combinatorial logic connected to a status memory which receives future state signals from the finite-state machine and sends current state signals to the finite-state machine. The combinatorial logic also receives and generates input and output signals which are external to the finite-state machine. The finite-state machine compares the future state signals to at least one reference level to set an error message to reset the finite-state machine for reliable computing and adjustment.
Abstract:
A decoded counter employing a shift register and a zero-detect circuit has the ability of returning to a correct state within a limited number of clock cycles if an invalid state is accidentally assumed by the counter. One of the flip-flops is provided with synchronous set while all the other flip-flops of the shift register are provided with synchronous reset. The output of the last flip-flop of the register drives a single set-reset line common to all the flip-flops and the pull-up line of the zero-detect circuit is connected to the input of the first flip-flop of the register. Optionally, one of the flip-flops may be provided with asynchronous set and the others with an asynchronous reset, for initializing the counter in a certain state through a single clear-load line.
Abstract:
A protection device, for a telephone (or other load) 27 in series with an external protection transistor 2, includes a sensor 6 for detecting common-mode current into the load. The output of the sensor 6 is connected to affect a current source/sink combination, and imbalance in this source/sink combination produces a voltage shift which is indirectly connected to control the protection transistor.
Abstract:
A method for connecting a wire lead between a semiconductor circuit chip and a corresponding terminal connector of a semiconductor device includes providing a bonding tool having a working end formed with at least a pair of grooves of different length, holding one end of the wire lead to the pin of the semiconductor device in one of said grooves and bonding it, and holding the other end of said wire to the chip in the other of said grooves an bonding it. The grooves have different lengths to allow for different wire spans across the bonded connection areas, on the chip and the pins.
Abstract:
An integrated device includes isolating regions of a first type of conductivity, each surrounding an epitaxial pocket of an opposite type of conductivity, and housing drain and source regions, and covered with an oxide layer housing gate regions and over which extend the source, drain and gate connections. For linearizing potential distribution at the epitaxial pocket--isolating region junction and close to the source regions beneath the connections, these regions are provided with a double chain of condensers embedded in the oxide layer and the terminal elements and the intermediate element of which are biased to predetermined potentials.
Abstract:
The matrix of EPROM memory cells comprises on a semiconductor substrate lines of source and drain parallel and alternated one to another, floating gate areas interposed in a checkerboard pattern between said source and drain lines and control gate lines parallel to one another and perpendicular to said source and drain lines in a superimposed condition with intermediate dielectric and aligned with respect to said floating gate areas. Field oxide areas are provided for, formed on the substrate between one and the other of said control gate lines and side fins of the floating gate areas and of the control gate lines superimposed over said field oxide areas.
Abstract:
A telephone subscriber system comprising a speech circuit and a ring circuit adapted to be integrated monolithically to a semiconductor material substrate and being coupled to a telephone subscriber line, respectively through first and second circuit switch of the diode bridge type, further comprises a first circuit changeover switch, under control by the user, which drives at least second and third circuit switching means connected between the first diode bridge circuit and the speech circuit. The third circuit changeover switch is connected to the speech and ring circuits at a circuit communication node which forms the system point of reference, physically coincident with the substrate. The system includes a circuit interface means for controlling the second and third circuit changeover switch by external electrical signals which are related to the circuit communication node. The circuit interface circuit comprises a diode connected with its cathode to the circuit communication node, in parallel with the third circuit changeover switch.
Abstract:
An integrated device includes isolating regions of a first type of conductivity, each surrounding an epitaxial pocket of an opposite type of conductivity, and housing drain and source regions, and covered with an oxide layer housing gate regions and over which extend the source, drain and gate connections. For linearizing potential distribution at the epitaxial pocket-isolating region junction and close to the source regions beneath the connections, these regions are provided with a double chain of condensers embedded in the oxide layer and the terminal elements and the intermediate element of which are biased to predetermined potentials.