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    Ion implantation system and control method
    271.
    发明申请
    Ion implantation system and control method 失效
    离子注入系统和控制方法

    公开(公告)号：US20060238133A1

    公开(公告)日：2006-10-26

    申请号：US11365719

    申请日：2006-03-01

    Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

    Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

    IPC: H01J7/24

    CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

    Abstract: An ion source is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target sure and the ions of the transported ion beam are implanted into the target.

    Abstract translation: 公开了一种离子源，其包括具有受限制的出口孔的离子化室，并被构造成使得离子化室中的气体或蒸气的压力显着高于离子将被提取外部的萃取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束传输到目标物，并将被输送的离子束的离子注入目标物中。

    High conductance ion source
    272.
    发明申请
    High conductance ion source 失效
    高电导离子源

    公开(公告)号：US20060219938A1

    公开(公告)日：2006-10-05

    申请号：US11074435

    申请日：2005-03-08

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: G01N23/12 ,  G01N21/01 ,  G01N21/51 ,  G01N23/10

    CPC classification number: H01J37/08 ,  H01J37/3171

    Abstract: A system, apparatus, and method for changing source gases used for ion implantation is provided. A source chamber has a housing having one or more sidewalls and an extraction plate, wherein the one or more sidewalls and the extraction plate enclose an interior region of the source chamber. One or more inlets provide a fluid communication between one or more ionizable material sources and the interior region. An extraction aperture in the extraction plate provides a fluid communication between the interior region of the source chamber and a beam path region external to the source chamber. One or more diffusion apertures in the one or more sidewalls of the housing further provide a fluid communication between the interior region and a diffusion region external to the ion source chamber, wherein deposited ions are operable to diffuse out of the source chamber through the diffusion apertures.

    Abstract translation: 提供了一种用于改变用于离子注入的源气体的系统，装置和方法。 源室具有壳体，其具有一个或多个侧壁和提取板，其中所述一个或多个侧壁和所述提取板围绕所述源室的内部区域。 一个或多个入口提供一个或多个可电离材料源和内部区域之间的流体连通。 提取板中的提取孔提供源室的内部区域与源室外部的光束路径区域之间的流体连通。 壳体的一个或多个侧壁中的一个或多个扩散孔还提供了内部区域和离子源室外部的扩散区域之间的流体连通，其中沉积的离子可操作以通过扩散孔扩散出源腔室 。

    Ion source for use in an ion implanter
    273.
    发明授权
    Ion source for use in an ion implanter 有权
    用于离子注入机的离子源

    公开(公告)号：US07105840B2

    公开(公告)日：2006-09-12

    申请号：US11049913

    申请日：2005-02-03

    Applicant: Klaus Becker ,  Werner Baer ,  Klaus Petry

    Inventor： Klaus Becker ,  Werner Baer ,  Klaus Petry

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J37/3171

    Abstract: An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The ion source has an arc chamber for ionizing a source material routed into the arc chamber that defines an exit aperture for routing ions to the transport system and including an arc chamber flange attached to the arc chamber and including a first surface that defines a gas inlet which accepts gas from a source and a gas outlet which opens into the arc chamber. An arc chamber support includes a support flange having a conforming surface that sealingly engages the first surface of arc chamber flange at a region of the gas inlet and further includes a throughpassage that aligns with the gas inlet. A gas supply line routes gas from a gas source through the throughpassage of the support flange and into the gas inlet of said arc chamber flange.

    Abstract translation: 一种离子注入机，其具有源，工件支撑和用于将离子从源输送到包含工件支撑件的离子注入室的输送系统。 离子源具有电弧室，用于电离导入电弧室的源材料，其限定用于将离子引导到输送系统的出口孔，并且包括附接到电弧室的电弧室凸缘，并且包括限定气体入口的第一表面 其接收来自源的气体和通向电弧室的气体出口。 电弧室支撑件包括具有适配表面的支撑凸缘，其密封地接合在气体入口的区域处的电弧室凸缘的第一表面，并且还包括与气体入口对准的通道。 气体供应管线将来自气体源的气体通过支撑凸缘的通孔引入到所述电弧室凸缘的气体入口中。

    Charged particle beam extraction and formation apparatus
    274.
    发明申请
    Charged particle beam extraction and formation apparatus 有权

    公开(公告)号：US20060192132A1

    公开(公告)日：2006-08-31

    申请号：US11207656

    申请日：2005-08-18

    Applicant: Viktor Kanarov ,  Alan Hayes ,  Rustam Yevtukhov ,  Daniel Yakovlevitch

    Inventor： Viktor Kanarov ,  Alan Hayes ,  Rustam Yevtukhov ,  Daniel Yakovlevitch

    IPC: H01J3/14

    CPC classification number: H01J27/024 ,  H01J27/022 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/3151

    Abstract: A charged particle apparatus, with multiple electrically conducting semispheric grid electrodes, the grid electrodes mounted in a dielectric mounting ring, with hidden areas or regions to maintain electrical isolation between the grid electrodes as sputter deposits form on the grid electrodes and mounting ring. The grid electrodes are mounted to the mounting ring with slots and fastening pins that allow sliding thermal expansion and contraction between the grid electrodes and mounting ring while substantially maintaining alignment of grid openings and spacing between the grid electrodes. Asymmetric fastening pins facilitate the sliding thermal expansion while restraining the grid electrodes. Electrical contactors supply and maintain electrical potentials of the grid electrodes with spring loaded sliding contacts, without substantially affecting the thermal characteristics of the grid electrodes.

    Ion implantation system and control method
    276.
    发明授权
    Ion implantation system and control method 失效
    离子注入系统和控制方法

    公开(公告)号：US07064491B2

    公开(公告)日：2006-06-20

    申请号：US10433493

    申请日：2001-06-12

    Applicant: Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

    Inventor： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

    IPC: H01J7/24 ,  H01J27/00

    CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

    Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

    Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

    Liquid metal ion gun
    278.
    发明申请
    Liquid metal ion gun 有权
    液态金属离子枪

    公开(公告)号：US20060097186A1

    公开(公告)日：2006-05-11

    申请号：US11312367

    申请日：2005-12-21

    Applicant: Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    Inventor： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    IPC: H01J27/00

    CPC classification number: H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

    Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    Abstract translation: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

    Dipole ion source
    279.
    发明授权
    Dipole ion source 失效
    偶极离子源

    公开(公告)号：US07023128B2

    公开(公告)日：2006-04-04

    申请号：US10475547

    申请日：2002-04-10

    Applicant: John Madocks

    Inventor： John Madocks

    IPC: H05H1/46 ,  H05H1/54

    CPC classification number: H01J27/14 ,  H01J37/08 ,  H01J37/32431

    Abstract: A dipole ion source (FIG. 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode (4) creating an electric field penetrating the magnetic field and confining electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves an ion beam on the substrate.

    Abstract translation: 偶极离子源（图1）包括两个阴极表面，一个衬底（1）和一个极（3）; 其中在所述基板和所述极之间限定间隙; 包括压缩端的不对称镜面磁场，其中所述衬底位于所述磁场的较小压缩端中; 以及阳极（4），产生穿过磁场的电场并将电子限制在连续的霍尔电流回路中，其中非对称磁场用于衬底上的离子束。

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