公开(公告)号：US6153872A

公开(公告)日：2000-11-28

申请号：US122965

申请日：1998-07-27

Applicant: Mark J. Hagmann ,  Manuel Brugat

Inventor： Mark J. Hagmann ,  Manuel Brugat

IPC: H01J1/304 ,  H01J1/34 ,  H01J3/02 ,  H01S3/00 ,  H01J40/14

CPC classification number: H01J1/304 ,  H01J1/34 ,  H01J3/021 ,  H01J2201/317

Abstract: An apparatus for high speed gating of electric current based on the resonant interaction of tunneling electrons with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.

Abstract translation: 公开了一种基于隧道电子与光场的谐振相互作用的电流高速选通装置。 本发明利用直流电压源偏置电子发射尖端，并且将来自激光器的输出聚焦在电子发射尖端上以刺激来自尖端的电子发射。 电子发射产生电信号，该电信号被耦合到用于进一步处理的电路。 根据本发明，公开了耦合来自电子发射尖端的电信号的各种方法，减少刺激电子发射所需的激光输出的幅度的各种方法以及提高静态电流密度的方法也是如此。

公开(公告)号：US6149792A

公开(公告)日：2000-11-21

申请号：US940706

申请日：1997-09-30

Applicant: Kishore K. Chakravorty

Inventor： Kishore K. Chakravorty

IPC: H01J9/02 ,  H01J3/02 ,  H01J9/14 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12 ,  C25D5/02 ,  H01L21/288 ,  H01L21/445

CPC classification number: H01J9/148 ,  H01J29/467 ,  H01J3/022

Abstract: A structure and method for forming an anodized row electrode for a field emission display device. In one embodiment, the present invention comprises depositing a resistor layer over portions of a row electrode. Next, an inter-metal dielectric layer is deposited over the row electrode. In the present embodiment, the inter-metal dielectric layer deposited over portions of the resistor layer and over pad areas of the row electrode. After the deposition of the inter-metal dielectric layer, the row electrode is subjected to an anodization process such that exposed regions of the row electrode are anodized. In so doing, the present invention provides a row electrode structure which is resistant to row to column electrode shorts and which is protected from subsequent processing steps.

Abstract translation: 一种用于形成用于场致发射显示装置的阳极化行电极的结构和方法。 在一个实施例中，本发明包括在行电极的部分上沉积电阻层。 接下来，在行电极上沉积金属间介电层。 在本实施例中，金属间电介质层沉积在电极层的一部分上，并且在行电极的焊盘区域上。 在沉积金属间电介质层之后，对行电极进行阳极氧化处理，使得行电极的暴露区域被阳极氧化。 这样做，本发明提供了一种对行至列电极短路有抵抗作用的行电极结构，不受后续处理步骤的影响。

公开(公告)号：US6135839A

公开(公告)日：2000-10-24

申请号：US430126

申请日：1999-10-29

Applicant: Yuichi Iwase ,  Masami Okita

Inventor： Yuichi Iwase ,  Masami Okita

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423

Abstract: A field emission display having element including a first electrode, and a second electrode laminated to the first electrode through an insulating layer. The first electrode has an opening; the second electrode has a hole of a planar shape corresponding to that of the opening at a position matched with the opening; and the insulating layer has a through-hole continuous to the opening and the hole. An upper edge portion of the hole is formed into a cross-sectional shape having an edge angle in a range of 80 to 100.degree., and at least part of the upper edge portion of the hole is exposed in the through-hole. In this element, electrons are emitted from the second electrode through the upper edge portion of the hole exposed in the through-hole by applying a specific voltage between the first electrode and the second electrode. With this configuration, a distance between the gate electrode and a field emission portion of the cathode electrode can be accurately controlled with a simple structure. To enhance an emission efficiency of electrons, a second gate electrode may be provided on the lower side of the cathode electrode through an insulating layer.

Abstract translation: 一种场致发射显示器，其具有包括第一电极的元件和通过绝缘层层叠到第一电极的第二电极。 第一电极具有开口; 所述第二电极具有与所述开口配合的位置处的所述开口对应的平面形状的孔; 并且所述绝缘层具有与所述开口和所述孔连续的通孔。 孔的上边缘部分形成为具有80°至100°的边缘角度的横截面形状，并且孔的上边缘部分的至少一部分暴露在通孔中。 在该元件中，通过在第一电极和第二电极之间施加特定电压，从第二电极通过暴露在通孔中的孔的上边缘部分发射电子。 利用这种结构，能够以简单的结构精确地控制栅极电极和阴极电极的场发射部分之间的距离。 为了提高电子的发射效率，可以通过绝缘层在阴极的下侧设置第二栅电极。

公开(公告)号：US6111353A

公开(公告)日：2000-08-29

申请号：US311083

申请日：1999-05-13

Applicant: John L. Janning

Inventor： John L. Janning

IPC: H01J3/02 ,  H01J29/02 ,  H01J29/06 ,  H01J29/08 ,  H01J29/46 ,  H01J31/12 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01J29/085 ,  H01J29/023 ,  H01J29/06 ,  H01J29/467 ,  H01J3/022 ,  H01J31/123 ,  H01J31/127 ,  H01J2201/32

Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

Abstract translation: 阴极发光场致发射显示装置具有荧光偏置，用于二次电子发射的放大材料层，氧化物二次发射增强层和氮化硅的离子阻挡层，以提供具有改进的操作特性和耐久性的高效率，高亮度场致发射显示器。 扩增材料包括铜 - 钡，铜 - 铍，金 - 钡，金 - 钙，银 - 镁和钨 - 钡 - 金，以及其他高放大因子材料，用于在场发射显示器内产生高级二次电子发射 设备。 对于增强的二次电子发射，可以用基本上由钡，铍，钙，镁或锶的氧化物组成的近单分子膜涂覆扩增材料层。 在本公开中进一步描述了使用高放大因子膜作为荧光体偏置电极，以及荧光体偏置电位的变化以实现亮度或灰度级控制。

公开(公告)号：US6084245A

公开(公告)日：2000-07-04

申请号：US45853

申请日：1998-03-23

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J3/02 ,  H01L29/06

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2201/30446

Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

公开(公告)号：US6051917A

公开(公告)日：2000-04-18

申请号：US910129

申请日：1997-08-12

Applicant: Mamoru Nakasuji

Inventor： Mamoru Nakasuji

IPC: H01J37/06 ,  H01J3/02 ,  H01L21/027

CPC classification number: H01J3/029 ,  H01J2223/065

Abstract: Electron guns are disclosed that produce low-brightness and high-emittance electron beams that are suitable for use in an electron-beam reduction-lithography apparatus. A preferred embodiment comprises a cathode, a Wehnelt electrode, an anode, and at least one control electrode placed between the cathode and the anode. Each of these components defines a spherical surface all having a common center point and all thus being concentric with one another. During operation, the anode has a grounded electrical potential while the cathode and the Wehnelt electrode each have a potential of about -100 KV. If the applied voltage to the control electrode is adjusted within a range of -99 to -90 KV, the brightness can be controlled to within a range of 1.times.10.sup.3 to 2.times.10.sup.4 A/cm.sup.2.sr.

Abstract translation: 公开了产生适用于电子束还原光刻设备的低亮度和高发射电子束的电子枪。 优选实施例包括阴极，Wehnelt电极，阳极以及放置在阴极和阳极之间的至少一个控制电极。 这些部件中的每一个都限定了一个全部具有公共中心点的球形表面，并且所有球面都彼此同心。 在操作期间，阳极具有接地电位，而阴极和Wehnelt电极各自具有约-100KV的电位。 如果将控制电极的施加电压调整在-99〜-90KV的范围内，则可以将亮度控制在1×103〜2×104A / cm2.sr的范围内。

公开(公告)号：US6049162A

公开(公告)日：2000-04-11

申请号：US70028

申请日：1998-04-30

Applicant: Christoph Schultheiss ,  Vladimir Engelko ,  Gerd Kraft ,  Gustav Schumacher ,  Georg Muller

Inventor： Christoph Schultheiss ,  Vladimir Engelko ,  Gerd Kraft ,  Gustav Schumacher ,  Georg Muller

IPC: H01J3/02 ,  H01J37/06 ,  H01J17/26 ,  H01J61/28

CPC classification number: H01J3/02 ,  H01J37/06 ,  H01J2237/06375 ,  H01J2237/316

Abstract: In a pulsed electron beam source based on the vacuum principle, comprising a vacuum diode having a multi-point emission cathode with a flange and a plurality of emission points, a control grid, a pulse generator, a magnetic compression unit consisting of field coils, a drift chamber, a target chamber and a synchronization unit, the multipoint emission cathode is embedded in a shield electrode, and the shield electrode is connected to the cathode base by way of a resistor which is so sized that the shield electrode is capable of freely floating.

Abstract translation: 在基于真空原理的脉冲电子束源中，包括具有法兰和多个发射点的多点发射阴极的真空二极管，控制栅格，脉冲发生器，由场线圈组成的磁压缩单元， 漂移室，目标室和同步单元，多点发射阴极嵌入屏蔽电极中，屏蔽电极通过电阻器连接到阴极基座，电阻器的尺寸使得屏蔽电极能够自由地 浮动

公开(公告)号：US6028391A

公开(公告)日：2000-02-22

申请号：US953407

申请日：1997-10-17

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J1/304 ,  H01J1/30 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/30426

Abstract: There is provided a field emission thin film cold cathode including a substrate, an electron-emission layer formed on the substrate and having a spherical surface or a curved surface approximated to a spherical surface recessed into the substrate, a first electrode disposed about the electron-emission layer and having a greater height from the substrate than the electron-emission layer, an electrically insulating layer formed on the first electrode, and a second electrode formed on the electrically insulating layer. The electron-emission layer may be made of monocrystalline diamond, polycrystalline diamond or amorphous diamond. The above-mentioned field emission thin film cold cathode provides an electron source which makes it no longer necessary to fabricate a micro-structured device, can be fabricated without a lithography apparatus having a high accuracy, and has a small current modulating voltage.

Abstract translation: 提供一种场致发射薄膜冷阴极，其包括基板，形成在基板上的电子发射层，具有近似于凹入基板的球面的球面或曲面;第一电极， 并且具有比所述电子发射层更高的与所述衬底的高度，形成在所述第一电极上的电绝缘层和形成在所述电绝缘层上的第二电极。 电子发射层可以由单晶金刚石，多晶金刚石或非晶金刚石制成。 上述场发射薄膜冷阴极提供了不再需要制造微结构器件的电子源，可以在没有高精度的光刻设备的情况下制造，并且具有小的电流调制电压。

公开(公告)号：US06028322A

公开(公告)日：2000-02-22

申请号：US120988

申请日：1998-07-22

Applicant: Behnam Moradi

Inventor： Behnam Moradi

IPC: H01J1/304 ,  H01J3/02 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field emission display includes a substrate, a plurality of emitters formed on the substrate, a semiconductor device formed in or on the substrate for controlling the flow of electrons to the emitters and a dielectric layer formed on the substrate. An extraction grid is formed on the dielectric layer substantially in a plane of tips of the plurality of emitters and includes openings each surrounding one of the emitters. The display also includes a transparent viewing screen, a transparent conductor formed on the viewing screen and a cathodoluminescent layer formed on the transparent conductor. The semiconductor device includes a gate dielectric and a field oxide. Significantly, the field oxide includes an interfacial region acting as a trapping and recombination site for mobile charge carriers. As a result, the semiconductor device is more robust and is better able to resist parameter shifts or performance degradation due to exposure to X-rays and photons that are incidentally generated along with the desired images on the display. This results in a more robust field emission display.

Abstract translation: 场发射显示器包括衬底，形成在衬底上的多个发射体，形成在衬底中或衬底上的半导体器件，用于控制向发射体的电子流和形成在衬底上的电介质层。 提取栅格基本上在多个发射器的尖端的平面上形成在电介质层上，并且包括围绕发射器之一的开口。 显示器还包括透明观察屏幕，形成在观察屏幕上的透明导体和形成在透明导体上的阴极发光层。 半导体器件包括栅极电介质和场氧化物。 重要的是，场氧化物包括用作移动电荷载体的捕获和重组位点的界面区域。 结果，半导体器件更坚固，并且能够更好地抵抗由于暴露于与显示器上的所需图像并行地产生的X射线和光子的参数偏移或性能劣化。 这导致更强劲的场致发射显示。

公开(公告)号：US6018215A

公开(公告)日：2000-01-25

申请号：US957778

申请日：1997-10-27

Applicant: Hisashi Takemura

Inventor： Hisashi Takemura

IPC: H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J7/44

CPC classification number: H01J3/022

Abstract: A field emission cold cathode in which all protrusion portions and corner portions around a gate electrode as well as corner portions facing an anode electrode are formed so as to be at obtuse angles or arc-shaped, whereby discharging of the gate electrode is suppressed to prevent breakdown of the device. A dummy electrode having more acute protrusion portions of the gate electrode is provided around the gate electrode, to further suppress discharging of the gate electrode.

Abstract translation: 一种场致发射冷阴极，其中围绕栅电极的所有突出部分和角部以及面对阳极电极的拐角部分形成为钝角或弧形，从而抑制栅电极的放电以防止 设备故障 在栅电极的周围设置具有栅极电极的锐角突起部的虚拟电极，进一步抑制栅电极的放电。