公开(公告)号：US20140261181A1

公开(公告)日：2014-09-18

申请号：US14191364

申请日：2014-02-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong CHEN

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract translation: 用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。 第一线圈设置在第一杆上。 第一线圈是设置在第一条上的唯一线圈。 第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。 带状光束在间隙之间传播。 第二线圈设置在第二杆上。 第二线圈是设置在第二杆上的唯一线圈。 第一电源连接到第一线圈而不与任何其它线圈电连接。 第二电源连接到第二线圈而不与任何其它线圈电连接。

公开(公告)号：US20140175568A1

公开(公告)日：2014-06-26

申请号：US14195605

申请日：2014-03-03

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Daniel TANG ,  Tzu-Shih YEN

IPC: H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/30604 ,  H01L21/31053 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.

Abstract translation: 形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。 翅片在半导体晶片上蚀刻。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻源极和漏极区域，离开鳍片的沟道区域。 外延半导体在与源极和漏极区相邻的沟道区的侧面生长以形成源外延区和漏极外延区。 源极和漏极外延区域在生长外延半导体的同时原位掺杂。

公开(公告)号：US20140161987A1

公开(公告)日：2014-06-12

申请号：US14183320

申请日：2014-02-18

Applicant: ADVANCED ION BEAM TECHNOLOGY., INC.

Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DONALD WAYNE BERRIAN ,  CAUSON KO-CHUAN JEN

IPC: C23C14/48

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US20140151572A1

公开(公告)日：2014-06-05

申请号：US13692461

申请日：2012-12-03

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Wei-Cheng LIN ,  Zhimin WAN ,  Koulin HU

IPC: H01J27/02

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/082 ,  Y10T137/0329

Abstract: A gas mixture method and apparatus of prolonging lifetime of an ion source for generating an ion beam particularly an ion beam containing carbon is proposed here. By mixing the dopant gas and the minor gas together to generate an ion beam, undesired reaction between the gas species and the ion source can be mitigated and thus lifetime of the ion source can be prolonged. Accordingly, quality of ion beam can be maintained.

Abstract translation: 这里提出了一种用于产生离子束，特别是含有离子束的离子源的寿命延长的气体混合方法和装置。 通过将掺杂气体和次要气体混合在一起以产生离子束，可以减轻气体物质和离子源之间的不期望的反应，从而可以延长离子源的寿命。 因此，可以保持离子束的质量。

公开(公告)号：US20130187349A1

公开(公告)日：2013-07-25

申请号：US13745426

申请日：2013-01-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Richard F. McRAY

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  H01L21/68764 ,  Y10T279/23

Abstract: A scan head assembled to a scan arm for an ion implanter and a scan arm using the same are provided, wherein the scan head is capable of micro tilting a work piece and comprises a case, a shaft assembly, an electrostatic chuck, a first driving mechanism and a micro-tilt mechanism. The shaft assembly passes through a first side of the case and has a twist axis. The electrostatic chuck is fastened on a first end of the shaft assembly outside the case for holding the work piece. The first driving mechanism is disposed within the case and capable of driving the shaft assembly and the ESC to rotate about the twist axis. The micro-tilt mechanism is disposed within the case and capable of driving the shaft assembly and the ESC to tilt relative to the case.

Abstract translation: 提供了组装到用于离子注入机的扫描臂和使用其的扫描臂的扫描头，其中扫描头能够微型倾斜工件，并且包括壳体，轴组件，静电卡盘，第一驱动 机构和微倾斜机制。 轴组件穿过壳体的第一侧并且具有扭转轴线。 静电卡盘被紧固在轴组件的外部的第一端上，用于保持工件。 第一驱动机构设置在壳体内并且能够驱动轴组件和ESC围绕扭转轴线旋转。 微倾斜机构设置在壳体内并且能够驱动轴组件和ESC相对于壳体倾斜。

公开(公告)号：US20130130484A1

公开(公告)日：2013-05-23

申请号：US13746257

申请日：2013-01-21

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： ZHIMIN WAN ,  John D. POLLOCK ,  Don BERRIAN

IPC: H01L21/265

CPC classification number: H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Abstract translation: 公开了一种离子注入机和离子注入方法。 基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。 因此，可以简化移动晶片所需的硬件和/或操作。 此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。 可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。

公开(公告)号：US20030200930A1

公开(公告)日：2003-10-30

申请号：US10133140

申请日：2002-04-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen ,  Zhimin Wan

IPC: C23C016/00

CPC classification number: H01J37/3171 ,  H01J2237/0041

Abstract: This invention discloses an ion implantation apparatus that has an ion source and an ion extraction means for extracting an ion beam therefrom. The ion implantation apparatus further includes an ion beam sweeping-and-deflecting means disposed immediately next to the ion extraction means. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping means. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting means is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation. In a preferred embodiment, the ion implantation apparatus further includes a plasma electron flood system disposed between the mass slit and the substrate for projecting a plurality of electrons to the ion beam for preventing a space-charge and beam dispersion. In another preferred embodiment, the ion beam extraction and projecting system of this invention further includes a divergent ion-beam extracting optics for extracting an ion beam with a small divergent angle for projecting and diverging the ion beam as the ion beam is projected toward the target surface.

Abstract translation: 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置还包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。 在优选实施例中，离子注入装置还包括设置在质量狭缝和基板之间的等离子体电子泛滥系统，用于将多个电子投射到离子束以防止空间电荷和光束分散。 在另一个优选实施例中，本发明的离子束提取和投影系统还包括发散离子束提取光学器件，用于当离子束朝向目标投影时以小的发散角提取离子束，用于投射和发散离子束 表面。

公开(公告)号：US12170182B2

公开(公告)日：2024-12-17

申请号：US17366308

申请日：2021-07-02

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Chi-ming Huang ,  Shao-Yu Hu

IPC: H01J37/20 ,  H01J37/147 ,  H01J37/317 ,  H01L21/265

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

公开(公告)号：US11942343B2

公开(公告)日：2024-03-26

申请号：US17162108

申请日：2021-01-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Steven R. Walther

IPC: H01L21/67 ,  C23C14/48 ,  C23C14/54 ,  G01B7/06 ,  G01B11/08 ,  G01K3/00 ,  G01S7/481 ,  G01S17/08 ,  H01L21/265 ,  H01L21/324 ,  H01L21/66

CPC classification number: H01L21/67248 ,  C23C14/48 ,  C23C14/541 ,  G01B7/08 ,  G01B11/08 ,  G01K3/005 ,  G01S7/4814 ,  G01S17/08 ,  H01L21/265 ,  H01L21/324 ,  H01L21/67115 ,  H01L22/12 ,  H01L22/26

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

公开(公告)号：US11430589B2

公开(公告)日：2022-08-30

申请号：US17350484

申请日：2021-06-17

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Ching-Shiang Hwang ,  Jyh-Chyuan Jan ,  Hui-Huang Chen ,  Yun-Liang Chu

IPC: H01F7/02

Abstract: The disclosure provides a hybrid magnet structure which includes two dipole magnets assemblies arranged oppositely, and each dipole magnet assembly includes a permanent magnet, two iron cores, and a moveable magnetic field shunt element. The hybrid magnet structure is adapted to focus particle beams of different positions by applying an adjustable gradient magnetic field in the horizontal or vertical direction of the particle beam. By passing the charged particle beams through the gradient magnetic field established between the two dipole magnets, the aspect of focusing the charged particle beam is achieved. In addition, the intensity of the gradient magnetic field can be altered by adjusting the gap between the movable magnetic field shunt element and the permanent magnet, thereby controlling the particle beam size on a specific axis for different energies or masses of the charge particles.