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    X-ray computed tomography system
    21.
    发明授权
    X-ray computed tomography system 失效
    X线计算机断层扫描系统

    公开(公告)号：US5490193A

    公开(公告)日：1996-02-06

    申请号：US734168

    申请日：1991-07-22

    申请人： Katsuhiro Kuroda ,  Koichi Koike ,  Atsuko Takafuji ,  Fumio Noda

    发明人： Katsuhiro Kuroda ,  Koichi Koike ,  Atsuko Takafuji ,  Fumio Noda

    IPC分类号： A61B6/03 ,  H01J35/30 ,  H05G1/70 ,  H05G1/60

    CPC分类号： A61B6/032 ,  A61B6/4028 ,  H01J35/30 ,  H05G1/70

    摘要： This invention provides a compact X-ray CT system capable of obtaining an X-ray CT image having high resolution at a high speed by deflecting a predetermined electron beam and causing the finely focused electron beam to scan on an arcuate anode target inside the same plane as the arcuate anode target for an X-ray source. The anode target for an X-ray source and a detector are disposed in the form of arcs inside substantially the same plane so as to face each other. The electron beam emitted from an electron gun is guided to a deflector through a lens system, is then deflected to a arc form trajectory by a uniform magnetic field generated by the deflector and is guided to the anode target after a reverse magnetic field is applied to the electron beam at a desired position. This electron beam is caused to scan on the anode target at a high speed so as to move the generation position of the X-ray and thus to obtain a sectional image.

    摘要翻译： 本发明提供一种紧凑的X射线CT系统，其能够通过偏转预定的电子束来获得高分辨率的X射线CT图像，并使精细聚焦的电子束在同一平面内的弓形阳极靶上扫描 作为X射线源的弓形阳极靶。 用于X射线源和检测器的阳极靶以大致相同的平面内的弧形的形式设置成彼此面对。 从电子枪发射的电子束通过透镜系统被引导到偏转器，然后通过由偏转器产生的均匀磁场偏转到弧形轨迹，并且在反向磁场被施加到 电子束在期望的位置。 使该电子束以高速扫描阳极靶，以移动X射线的产生位置，从而获得截面图像。

    Evaluation method and manufacturing method of semiconductor device
    28.
    发明申请
    Evaluation method and manufacturing method of semiconductor device 审中-公开
    半导体器件的评估方法和制造方法

    公开(公告)号：US20060022295A1

    公开(公告)日：2006-02-02

    申请号：US11186831

    申请日：2005-07-22

    申请人： Atsuko Takafuji ,  Mari Nozoe ,  Kiyonori Oyu

    发明人： Atsuko Takafuji ,  Mari Nozoe ,  Kiyonori Oyu

    IPC分类号： H01L23/58 ,  H01L29/00 ,  G01R31/305

    CPC分类号： H01L22/14 ,  G01R31/2653 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The electron beam is irradiated several times at predetermined intervals to the wafer surface on which the plugs are exposed in the course of the manufacturing process so that the pn junction is in the reverse bias state. Then, the irradiation conditions of the electron beam are changed while monitoring the charging voltage on the plug surface, and the secondary electron signals of the circuit pattern are obtained under the irradiation conditions that the charging is within a desired range, thereby evaluating the leakage property. Since the charging voltage of the pn junction is relaxed depending on the magnitude of the leakage current during the interval, the leakage property is evaluated based on the luminance signals of the voltage contrast image. By measuring the charging voltage and setting it within a desired range, the evaluation result reflects the state in the actual operation. Therefore, the accuracy is enhanced.

    摘要翻译： 电子束在制造过程中以预定间隔照射到插头暴露在其上的晶片表面，使得pn结处于反向偏置状态。 然后，在监视插头表面上的充电电压的同时改变电子束的照射条件，并且在充电在期望范围内的照射条件下获得电路图案的二次电子信号，从而评估泄漏特性 。 由于pn结的充电电压根据间隔期间的漏电流的大小而放宽，所以基于电压对比度图像的亮度信号来评价泄漏特性。 通过测量充电电压并将其设置在所需范围内，评估结果反映实际操作中的状态。 因此，精度提高。

    Pattern inspection method and apparatus using electron beam
    29.
    发明授权
    Pattern inspection method and apparatus using electron beam 失效
    使用电子束的图案检查方法和装置

    公开(公告)号：US06614022B2

    公开(公告)日：2003-09-02

    申请号：US09908713

    申请日：2001-07-20

    申请人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

    发明人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

    IPC分类号： H01J37244

    CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/24465 ,  H01J2237/2817

    摘要： In the detecting system for irradiating the electron beam and detecting the secondary electron thereof, an area of the detector is an important factor for high-speed detection. For the technique of the current electron optical system and detector, a detector of the area larger than a constant area is necessary and detection of 200 Msps or more by receiving limitation on the frequency inversely proportional to the area is substantially difficult. For example, for detection at 400 Msps under the condition that the required area is 4 mm square and the rate for 4 mm square is defined as 150 Msps, four discrete high-speed detectors of 2 mm square are arranged to amplify and then add the signals for A/D conversion. Otherwise, the secondary electron is sequentially inputted to the detector of 8 mm square with the secondary electron deflector, the secondary electron is detected at 100 Msps and arranged after the A/D conversion. In any case, the area of 4 mm square and rate of 400 Msps can be attained.

    摘要翻译： 在用于照射电子束并检测其二次电子的检测系统中，检测器的面积是高速检测的重要因素。 对于当前电子光学系统和检测器的技术，需要一个大于恒定面积的区域的检测器，并且通过接收与该区域成反比的频率的限制来检测200 Msps以上是非常困难的。例如，对于 在所需面积为4平方毫米，4平方毫米的速率定义为150 Msps的条件下，以400 Msps进行检测，放置4个离散高速2 mm的高速检测器，放大，然后将A / D转换。 否则，二次电子依次输入到具有二次电子偏转器的8mm正方形的检测器，二次电子以100Msps检测并且在A / D转换之后排列。 在任何情况下，可以获得4平方毫米的面积和400 Msps的面积。