公开(公告)号：US4350700A

公开(公告)日：1982-09-21

申请号：US257583

申请日：1981-04-27

申请人： Hajime Fujimura ,  Yasuzo Hiramatsu ,  Takahiro Yabuuchi ,  Masakatu Hisaki ,  Katsuo Takikawa ,  Takaji Honna ,  Hidekazu Miyake ,  Makoto Kajitani

发明人： Hajime Fujimura ,  Yasuzo Hiramatsu ,  Takahiro Yabuuchi ,  Masakatu Hisaki ,  Katsuo Takikawa ,  Takaji Honna ,  Hidekazu Miyake ,  Makoto Kajitani

IPC分类号： A61K31/17 ,  C07C273/18 ,  C07C275/62 ,  C07D213/40 ,  C07D213/75 ,  C07D239/42 ,  C07D277/48 ,  C07D317/66 ,  C07D333/36 ,  A61K31/44

CPC分类号： C07D213/40 ,  A61K31/17 ,  C07C273/1863 ,  C07C273/1872 ,  C07D213/75 ,  C07D239/42 ,  C07D277/48 ,  C07D317/66 ,  C07D333/36 ,  Y10S514/825 ,  Y10S514/916

摘要： An analgesic, anti-inflammatory or anti-pyretic composition containing 1,3,5-substituted biuret compound of the formula, ##STR1## wherein R.sup.1 is a hydrogen atom, a lower alkyl group, a substituted lower alkyl group having chlorine atom(s), cyano group(s), dimethylamino group(s), hydroxy group(s), methoxy group(s) or carboxy group(s) as the substituent(s), a lower alkenyl group, a hydroxy group, a methoxy group, an acetyl group or a phenyl group; R.sup.2 is a hydrogen atom, a lower alkyl group or a phenyl group; R.sup.3 is a phenyl group, a substituted phenyl group having halogen atom(s), trifluoromethyl group(s), methyl group(s), methoxy group(s), methylenedioxy group(s), hydroxy group(s), dimethylamino group(s), carboxy group(s) or carboxymethyl group(s) as the substituent(s), a benzyl group, a pyridyl group, a substituted pyridyl group having methyl group(s) as the substituent(s), a pyridylmethyl group, pyrimidinyl group, a thiazolyl group or a thienyl group, as the active ingredient.

摘要翻译： 含有下式的1,3,5-取代缩二脲化合物的镇痛，抗炎或抗裂解组合物，其中R1是氢原子，低级烷基，具有氯原子的取代的低级烷基（s ），氰基，二甲基氨基，羟基，甲氧基或羧基作为取代基，低级烯基，羟基，甲氧基 ，乙酰基或苯基; R2是氢原子，低级烷基或苯基; R3为苯基，具有卤素原子的取代苯基，三氟甲基，甲基，甲氧基，亚甲二氧基，羟基，二甲基氨基（二甲基氨基） s），作为取代基的羧基或羧甲基，苄基，吡啶基，具有甲基取代基的取代的吡啶基，吡啶基甲基， 嘧啶基，噻唑基或噻吩基作为有效成分。

公开(公告)号：US4278672A

公开(公告)日：1981-07-14

申请号：US134555

申请日：1980-03-27

申请人： Hajime Fujimura ,  Yasuzo Hiramatsu ,  Takahiro Yabuuchi ,  Masakatu Hisaki ,  Katsuo Takikawa ,  Takaji Honna ,  Hidekazu Miyake ,  Makoto Kajitani

发明人： Hajime Fujimura ,  Yasuzo Hiramatsu ,  Takahiro Yabuuchi ,  Masakatu Hisaki ,  Katsuo Takikawa ,  Takaji Honna ,  Hidekazu Miyake ,  Makoto Kajitani

IPC分类号： A61K31/17 ,  C07C275/62 ,  C07D295/215 ,  A61K27/00 ,  A61K31/165 ,  A61K31/40 ,  A61K31/445

CPC分类号： C07D295/215 ,  A61K31/17 ,  C07C275/62 ,  Y10S514/887 ,  Y10S514/916

摘要： An analgesic, anti-inflammatory or anti-pyretic composition containing 1,1,3,5-substituted biuret compound of the formula, ##STR1## wherein R.sup.1 is a lower alkyl group or a phenyl group; R.sup.2 is a lower alkyl group, a phenyl group or a substituted phenyl group having chlorine atom(s), methyl group(s) or methoxy group(s) as the substituent(s), further R.sup.1 and R.sup.2 may form a single ring containing one or two hetero atoms including the adjacent nitrogen atom; R.sup.3 is a hydrogen atom, a lower alkyl group or a phenyl group; R.sup.4 is a phenyl group, a substituted phenyl group having halogen atom(s), trifluoromethyl group(s), methyl group(s), methoxy group(s), dimethylamino group(s), nitro group(s), hydroxyl group(s), acetyl group(s) or methylthio group(s) as the substituent(s), a benzyl group, a cyclohexyl group or a lower alkyl group, as the active ingredient.

摘要翻译： 含有下式的1,1,3,5-取代缩二脲化合物的镇痛，抗炎或抗热解组合物，其中R1是低级烷基或苯基; R2是低级烷基，苯基或具有氯原子的取代苯基，甲基或甲氧基作为取代基，此外，R 1和R 2可以形成含有 一个或两个杂原子，包括相邻的氮原子; R3是氢原子，低级烷基或苯基; R4是苯基，具有卤素原子的取代苯基，三氟甲基，甲基，甲氧基，二甲基氨基，硝基，羟基（ s），乙酰基或甲硫基作为取代基，苄基，环己基或低级烷基作为有效成分。

公开(公告)号：US4243812A

公开(公告)日：1981-01-06

申请号：US67889

申请日：1979-08-20

申请人： Takaji Honna ,  Motoaki Tanaka ,  Syozo Yamada ,  Hidekazu Miyake

发明人： Takaji Honna ,  Motoaki Tanaka ,  Syozo Yamada ,  Hidekazu Miyake

IPC分类号： A61K31/42 ,  A61P25/04 ,  A61P29/00 ,  C07D261/08 ,  C07D261/12

CPC分类号： C07D261/08

摘要： Novel derivatives of glyoxal-2-oxim represented by the chemical formula ##STR1## wherein R is hydrogen or a lower alkyl or phenyl group, are provided in accordance with the present invention. These derivatives are prepared by reacting the corresponding isoxazole-5-carbaldehyde with nitromethane in the presence of a metal alkoxide, or the corresponding 5-acetylisoxazole with a nitrate. They have anti-inflammatory and/or analgesic activities.

摘要翻译： 根据本发明提供了由化学式 [I]表示的乙二醛-2-肟基的新型衍生物，其中R是氢或低级烷基或苯基。 这些衍生物通过在金属醇盐或相应的5-乙酰异恶唑与硝酸盐存在下使相应的异恶唑-5-甲醛与硝基甲烷反应来制备。 它们具有抗炎和/或止痛活性。

公开(公告)号：US08610868B2

公开(公告)日：2013-12-17

申请号：US13042490

申请日：2011-03-08

申请人： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

发明人： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

IPC分类号： G02F1/1345

CPC分类号： G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.

摘要翻译： 为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造 和端子内部的控制区域。 图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。 另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。 当感应到静电时，导致端子外部的区域发生介电击穿。 因此，显示区域和控制区域被保护免受静电。

公开(公告)号：US08421940B2

公开(公告)日：2013-04-16

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： G02F1/136

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US20120081628A1

公开(公告)日：2012-04-05

申请号：US13252478

申请日：2011-10-04

申请人： Hidekazu NITTA ,  Hidekazu Miyake ,  Takuo Kaitoh

发明人： Hidekazu NITTA ,  Hidekazu Miyake ,  Takuo Kaitoh

IPC分类号： G02F1/136 ,  H01L33/62

CPC分类号： G02F1/1368 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.

摘要翻译： 一种液晶显示装置，用于增加像素中的TFT的导通电流，同时抑制其中通过等离子体CVD连续地形成TFT中的半导体层和第一n + -a-Si层的导通电流的变化 。 同时对半导体层和第一n + a-Si层进行图案化。 然后，形成第二n + a-Si层，以覆盖第一n + -a-Si层的上表面和半导体层的侧部。 通过在半导体层上连续地形成第一n + -a-Si层，可以增加导通电流并且可以减小TFT的导通电流的变化。

公开(公告)号：US08089497B2

公开(公告)日：2012-01-03

申请号：US12656047

申请日：2010-01-14

申请人： Masakazu Kato ,  Katsuhide Uchino ,  Hidekazu Miyake

发明人： Masakazu Kato ,  Katsuhide Uchino ,  Hidekazu Miyake

IPC分类号： G09G5/10

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0866 ,  G09G2310/06 ,  G09G2310/066 ,  G09G2330/028 ,  H01L27/3276

摘要： A driving method for a display device includes the steps of: performing writing processing to apply a video signal to a first node over a data line via a writing transistor with a predetermined driving voltage applied from a power supply to one of source/drain regions of a driving transistor, wherein the trailing edge of a scanning signal to be applied to a gate electrode of the writing transistor at the writing processing step is inclined; and the luminance characteristic of display elements connected onto each of a scan lines is controlled by controlling the crest value of the scanning signal, which is applied to first to M-th scan lines, for each of the scan lines.

摘要翻译： 一种用于显示装置的驱动方法包括以下步骤：执行写入处理，以便经由写入晶体管将数据线上的第一节点施加视频信号，该写入晶体管具有从电源施加到一个源极/漏极区域的一个源极/漏极区域的预定驱动电压 驱动晶体管，其中在写入处理步骤中施加到写入晶体管的栅电极的扫描信号的后沿是倾斜的; 通过对每个扫描线控制施加到第一至第M扫描线的扫描信号的波峰值来控制连接到每条扫描线上的显示元件的亮度特性。

公开(公告)号：US07671370B2

公开(公告)日：2010-03-02

申请号：US11898997

申请日：2007-09-18

申请人： Hidekazu Miyake ,  Toshihiko Itoga ,  Eiji Oue ,  Takeshi Noda

发明人： Hidekazu Miyake ,  Toshihiko Itoga ,  Eiji Oue ,  Takeshi Noda

IPC分类号： H01L27/14

CPC分类号： H01L21/268 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1222 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1237 ,  H01L27/1251 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/0657 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.

摘要翻译： 实现了SELAX-TFT的特性的改善和ELA结晶的生产率。 当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅 半导体部分。

公开(公告)号：US20100032673A1

公开(公告)日：2010-02-11

申请号：US12534904

申请日：2009-08-04

申请人： Terunori SAITOU ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Terunori SAITOU ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/04

摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.

摘要翻译： 液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并且形成在栅电极之上，其间插入有栅极绝缘膜。 源电极或漏电极形成在半导体层的上方。 在源极或漏电极与半导体层之间形成n + Si层。 由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。

公开(公告)号：US20090065777A1

公开(公告)日：2009-03-12

申请号：US12208371

申请日：2008-09-11

申请人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

发明人： Eiji Oue ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Yuichiro Takashina

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1229 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78678

摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.

摘要翻译： 在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个， 并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。