公开(公告)号：US20090312216A1

公开(公告)日：2009-12-17

申请号：US12063745

申请日：2006-08-05

申请人： Hyun Tak Kim ,  Seong Hwan Park ,  Jung Hun Lim ,  Sung Bae Kim ,  Chan Jin Jeong ,  Kui Jong Baek ,  Woong Hahn ,  Sang Won Lee ,  Gun-Woong Lee

发明人： Hyun Tak Kim ,  Seong Hwan Park ,  Jung Hun Lim ,  Sung Bae Kim ,  Chan Jin Jeong ,  Kui Jong Baek ,  Woong Hahn ,  Sang Won Lee ,  Gun-Woong Lee

IPC分类号： G03F7/42

CPC分类号： G03F7/425 ,  G03F7/426

摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

摘要翻译： 本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。 更具体地，光刻胶剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40wt％极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。 用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性， 在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

公开(公告)号：US20090286140A1

公开(公告)日：2009-11-19

申请号：US11813898

申请日：2006-01-12

申请人： Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

发明人： Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

IPC分类号： H01M10/50

CPC分类号： H01M2/34 ,  H01M2/348 ,  H01M10/052 ,  H01M10/443 ,  H01M2200/00 ,  H01M2200/106

摘要： Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

摘要翻译： 提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。 锂二次电池包括与电池体平行设置的放电单元。 放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电 高于预定的温度。 放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。

公开(公告)号：US20090230940A1

公开(公告)日：2009-09-17

申请号：US12294578

申请日：2007-03-14

申请人： JungWook Lim ,  Sun-Jin Yun ,  Hyun-Tak Kim ,  Yong-Wook Lee

发明人： JungWook Lim ,  Sun-Jin Yun ,  Hyun-Tak Kim ,  Yong-Wook Lee

IPC分类号： G05F3/02

CPC分类号： H01L27/0676 ,  H01L28/40 ,  H01L49/003

摘要： Provided is a voltage regulation system using an abrupt metal-insulator transition (MIT), which can regulate various zener voltages and can be easily manufactured. The voltage regulation system includes: an input power source: a series resistor connected in series to the input power source; and an MIT insulator connected in series to the series resistor, and undergoing an abrupt MIT such that the range of an output voltage regulated to be kept constant varies according to the resistance of the series resistor.

摘要翻译： 提供了一种使用突变金属 - 绝缘体转变（MIT）的电压调节系统，其可以调节各种齐纳电压并且可以容易地制造。 电压调节系统包括：输入电源：与输入电源串联连接的串联电阻; 以及与串联电阻器串联连接的MIT绝缘体，并且经历突发MIT，使得调节为保持恒定的输出电压的范围根据串联电阻器的电阻而变化。

公开(公告)号：US20090140626A1

公开(公告)日：2009-06-04

申请号：US12241182

申请日：2008-09-30

申请人： Dae Yong KIM ,  Hyun Tak KIM

发明人： Dae Yong KIM ,  Hyun Tak KIM

IPC分类号： H01J1/15 ,  H01J9/04

CPC分类号： H01J21/10

摘要： Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.

摘要翻译： 公开了一种真空沟道晶体管及其制造方法，该真空沟道晶体管包括由具有低功函数的材料形成的平面阴极层或包括由具有低功函数的材料形成的耐热层的平面阴极层。 在真空通道晶体管中，即使当向栅极层施加低电压时，也可以发射电子，阳极层的电压对阴极层的电子发射影响较小，并且消除了发射电流的不稳定性。 因此，可以实现高效率和长寿命，从而确保操作稳定性。

公开(公告)号：US20090114896A1

公开(公告)日：2009-05-07

申请号：US11994224

申请日：2006-06-29

申请人： Hyun-Tak Kim ,  Bong-Jun Kim ,  Kwang-Yong Kang ,  Sun-Jin Yun ,  Yong-Wook Lee ,  Byung-Gyu Chae

发明人： Hyun-Tak Kim ,  Bong-Jun Kim ,  Kwang-Yong Kang ,  Sun-Jin Yun ,  Yong-Wook Lee ,  Byung-Gyu Chae

IPC分类号： H01L47/00 ,  H01L51/00 ,  H01L21/00 ,  H01L51/40

CPC分类号： H01L27/10 ,  B82Y10/00 ,  G11C13/0007 ,  G11C13/0014 ,  G11C2213/32 ,  G11C2213/51 ,  H01L29/8615 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/148

摘要： Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.

摘要翻译： 提供了不经历结构相变，保持均匀的薄膜并且可以执行高速切换操作的存储器件及其操作方法。 存储器件包括衬底，突变MIT材料层和多个电极。 突变的MIT材料层设置在衬底上，并经过电子之间的能量变化而突然的金属 - 绝缘体转变。 多个电极与突然的MIT材料层接触并通过热熔化以在突变的MIT材料层上形成导电路径。

公开(公告)号：US20090057820A1

公开(公告)日：2009-03-05

申请号：US12162964

申请日：2007-01-31

申请人： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

发明人： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

IPC分类号： H01L23/525

CPC分类号： H01L49/003

摘要： An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.

摘要翻译： 提供了具有平行导电层的突发MIT（金属 - 绝缘体转变）器件。 突变MIT装置包括设置在基板的特定区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及将第一电极与第二电极电连接的至少一个导电层 并且具有允许导电层的整个区域由于MIT而转变成金属层的宽度。 由于这种构造，通常由电流流过导电层引起的导电层的劣化不太可能发生。

公开(公告)号：US07489492B2

公开(公告)日：2009-02-10

申请号：US12021764

申请日：2008-01-29

申请人： Hyun Tak Kim ,  Kwang Yong Kang ,  Bong Jun Kim ,  Yong Wook Lee ,  Sun Jin Yun ,  Byung Gyu Chae ,  Gyung Ock Kim

发明人： Hyun Tak Kim ,  Kwang Yong Kang ,  Bong Jun Kim ,  Yong Wook Lee ,  Sun Jin Yun ,  Byung Gyu Chae ,  Gyung Ock Kim

IPC分类号： H02H3/22 ,  H02H9/04

CPC分类号： H01L49/003

摘要： Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

摘要翻译： 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声 使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

公开(公告)号：US20090011145A1

公开(公告)日：2009-01-08

申请号：US12064807

申请日：2006-08-23

申请人： Sun-Jin Yun ,  Jung Wook Lim ,  Hyun Tak Kim ,  Byung Gyu Chae ,  Bong Jun Kim ,  Kwang Yong Kang

发明人： Sun-Jin Yun ,  Jung Wook Lim ,  Hyun Tak Kim ,  Byung Gyu Chae ,  Bong Jun Kim ,  Kwang Yong Kang

IPC分类号： C23C16/513 ,  C23C16/00

CPC分类号： C23C16/405 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/50

摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.

摘要翻译： 提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。 根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。 之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

公开(公告)号：US20130278327A1

公开(公告)日：2013-10-24

申请号：US13824993

申请日：2012-01-12

申请人： Hyun-Tak Kim ,  Bongjun Kim ,  Sun Shin Kwag ,  Jun Sik Kim

发明人： Hyun-Tak Kim ,  Bongjun Kim ,  Sun Shin Kwag ,  Jun Sik Kim

IPC分类号： G05F3/02

CPC分类号： G05F3/02 ,  G05F3/16 ,  H02M2001/327

摘要： The present inventive concept is a hyuntak transistor that can prevent a thermal runaway phenomenon and a low heat high efficiency constant current circuit using an auxiliary transistor capable of a high amplification and a constant current. The circuit may be applied to drive a LED and a motor.

摘要翻译： 本发明构思是可以使用能够实现高放大和恒定电流的辅助晶体管来防止热失控现象的hyuntak晶体管和低热高效率恒流电路。 该电路可用于驱动LED和电动机。

公开(公告)号：US08563903B2

公开(公告)日：2013-10-22

申请号：US12742430

申请日：2008-11-11

申请人： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sun-Jin Yun

发明人： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sun-Jin Yun

IPC分类号： H05B1/02

CPC分类号： H01L25/16 ,  H01L23/62 ,  H01L2924/0002 ,  H02H3/085 ,  H02H5/047 ,  H01L2924/00

摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

摘要翻译： 提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来阻止功率晶体管的发热来保护，并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围 电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热 晶体管。