中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

98 records (took 0.016 seconds)

    Non-Volatile Memory Devices Having Resistance Changeable Elements And Related Systems And Methods
    21.
    发明申请
    Non-Volatile Memory Devices Having Resistance Changeable Elements And Related Systems And Methods 有权
    具有电阻可变元件和相关系统和方法的非易失性存储器件

    公开(公告)号：US20120112156A1

    公开(公告)日：2012-05-10

    申请号：US13220777

    申请日：2011-08-30

    Applicant: Heung-Kyu Park ,  In-Sun Park ,  In-Gyu Baek ,  Byeong-Chan Lee ,  Sang-Bom Kang ,  Woo-Bin Song

    Inventor： Heung-Kyu Park ,  In-Sun Park ,  In-Gyu Baek ,  Byeong-Chan Lee ,  Sang-Bom Kang ,  Woo-Bin Song

    IPC: H01L45/00

    CPC classification number: H01L27/1021 ,  G11C13/0002 ,  G11C2213/71 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    Abstract: A non-volatile memory device may include a first wordline on a substrate, an insulating layer on the first wordline, and a second wordline on the insulating layer so that the insulating layer is between the first and second wordlines. A bit pillar may extend adjacent the first wordline, the insulating layer, and the second wordline in a direction perpendicular with respect to a surface of the substrate, and the bit pillar may be electrically conductive. In addition, a first memory cell may include a first resistance changeable element electrically coupled between the first wordline and the bit pillar, and a second memory cell may include a second resistance changeable element electrically coupled between the second wordline and the bit pillar. Related methods and systems are also discussed.

    Abstract translation: 非易失性存储器件可以包括衬底上的第一字线，第一字线上的绝缘层和绝缘层上的第二字线，使得绝缘层在第一和第二字线之间。 位柱可以在相对于衬底的表面垂直的方向上相邻于第一字线，绝缘层和第二字线延伸，并且位柱可以是导电的。 此外，第一存储单元可以包括电耦合在第一字线和位柱之间的第一电阻可变元件，并且第二存储单元可以包括电耦合在第二字线和位柱之间的第二电阻可变元件。 还讨论了相关方法和系统。

    Semiconductor Memory Devices
    23.
    发明申请
    Semiconductor Memory Devices 有权
    半导体存储器件

    公开(公告)号：US20110305059A1

    公开(公告)日：2011-12-15

    申请号：US13153749

    申请日：2011-06-06

    Applicant: Hak-soo Yu ,  Hong-sun Hwang ,  Kwan-young Oh ,  In-gyu Baek ,  Jin-hyoung Kwon

    Inventor： Hak-soo Yu ,  Hong-sun Hwang ,  Kwan-young Oh ,  In-gyu Baek ,  Jin-hyoung Kwon

    IPC: G11C5/06 ,  G11C7/00

    CPC classification number: G11C5/063

    Abstract: Semiconductor memory devices include a first storage layer and a second storage layer, each of which includes at least one array, and a control layer for controlling access to the first storage layer and the second storage layer so as to write data to or read data from the array included in the first storage layer or the second storage layer in correspondence to a control signal. A memory capacity of the array included in the first storage layer is different from a memory capacity of the array included in the second storage layer.

    Abstract translation: 半导体存储器件包括第一存储层和第二存储层，每个存储层包括至少一个阵列，以及用于控制对第一存储层和第二存储层的访问的控制层，以便将数据写入或从 该阵列包括在与控制信号对应的第一存储层或第二存储层中。 包括在第一存储层中的阵列的存储器容量不同于包括在第二存储层中的阵列的存储器容量。

    Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems
    24.
    发明授权
    Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems 有权
    使用电阻材料和内部电极的非易失性存储器件，以及相关方法和处理系统

    公开(公告)号：US07952163B2

    公开(公告)日：2011-05-31

    申请号：US12353553

    申请日：2009-01-14

    Applicant: In-Gyu Baek ,  Hyun-Jun Sim ,  Jin-Shi Zhao ,  Eun-Kyung Yim

    Inventor： In-Gyu Baek ,  Hyun-Jun Sim ,  Jin-Shi Zhao ,  Eun-Kyung Yim

    IPC: H01L29/00

    CPC classification number: G11C13/0007 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1633

    Abstract: A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.

    Abstract translation: 非易失性存储器件，非易失性存储器件的制造方法和包括非易失性存储器件的处理系统。 非易失性存储装置可以包括沿基板垂直于基板的方向延伸的多个内部电极，基本上平行于基板的表面延伸的多个第一外部电极和多个第二外部电极 其也基本上平行于衬底的表面延伸。 每个第一外部电极在相应的一个内部电极的第一侧上，并且每个第二外部电极在相应的一个内部电极的第二侧上。 这些器件还包括接触内部电极，第一外部电极和第二外部电极的多个可变电阻器。

    Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated
    26.
    发明授权
    Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated 有权
    编程非易失性存储器件的方法包括作为数据存储材料层的过渡金属氧化物层和如此操作的器件

    公开(公告)号：US07480174B2

    公开(公告)日：2009-01-20

    申请号：US11762483

    申请日：2007-06-13

    Applicant: Moon-Sook Lee ,  In-Gyu Baek

    Inventor： Moon-Sook Lee ,  In-Gyu Baek

    IPC: G11C11/00

    CPC classification number: G11C13/00 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    Abstract: A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to establish a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.

    Abstract translation: 一种对包括过渡金属氧化物层的非易失性存储器件进行编程的方法包括：将第一电脉冲施加到过渡金属氧化物层第一周期以建立过渡金属氧化物层的电阻并向第二电脉冲施加第二电脉冲 过渡金属氧化物层，延长第一周期，以增加过渡金属氧化物层的电阻。 还公开了相关设备。

    Nonvolatile Memory Cells Employing a Transition Metal Oxide Layers as a Data Storage Material Layer and Methods of Manufacturing the Same
    27.
    发明申请
    Nonvolatile Memory Cells Employing a Transition Metal Oxide Layers as a Data Storage Material Layer and Methods of Manufacturing the Same 有权
    使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元及其制造方法

    公开(公告)号：US20090008620A1

    公开(公告)日：2009-01-08

    申请号：US12200190

    申请日：2008-08-28

    Applicant: In-Gyu Baek ,  Moon-Sook Lee

    Inventor： In-Gyu Baek ,  Moon-Sook Lee

    IPC: H01L47/00

    CPC classification number: H01L27/115 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

    Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

    Abstract translation: 提供了使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。 非易失性存储单元包括彼此重叠的下电极和上电极。 在下电极和上电极之间设置过渡金属氧化物层图案。 过渡金属氧化物层图案由化学式MxOy表示。 在化学式中，字母“M”，“O”，“x”和“y”分别表示过渡金属，氧，过渡金属组成和氧组成。 与稳定的过渡金属氧化物层图案相比，过渡金属氧化物层图案具有过量的过渡金属含量。 还提供了制造非易失性存储单元的方法。

    Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same
    28.
    发明授权
    Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same 有权
    使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元及其制造方法

    公开(公告)号：US07420198B2

    公开(公告)日：2008-09-02

    申请号：US11179319

    申请日：2005-07-12

    Applicant: In-Gyu Baek ,  Moon-Sook Lee

    Inventor： In-Gyu Baek ,  Moon-Sook Lee

    IPC: H01L47/00

    CPC classification number: H01L27/115 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

    Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

    Abstract translation: 提供了使用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。 非易失性存储单元包括彼此重叠的下电极和上电极。 在下电极和上电极之间设置过渡金属氧化物层图案。 过渡金属氧化物层图案由化学式M X x O Y y表示。 在化学式中，字母“M”，“O”，“x”和“y”分别表示过渡金属，氧，过渡金属组成和氧组成。 与稳定的过渡金属氧化物层图案相比，过渡金属氧化物层图案具有过量的过渡金属含量。 还提供了制造非易失性存储单元的方法。

Patent Agency Ranking