公开(公告)号：US08455854B2

公开(公告)日：2013-06-04

申请号：US11704365

申请日：2007-02-09

Applicant: Choong-Rae Cho ,  Sung-Il Cho ,  In-Kyeong Yoo ,  Eun-Hong Lee ,  Chang-Wook Moon

Inventor： Choong-Rae Cho ,  Sung-Il Cho ,  In-Kyeong Yoo ,  Eun-Hong Lee ,  Chang-Wook Moon

IPC: H01L47/00

CPC classification number: H01L27/2409 ,  H01L21/31691 ,  H01L29/47 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.

Abstract translation: 非易失性存储器件可以包括下电极，包括设置在下电极上的非晶合金金属氧化物的氧化物层和设置在氧化物层上的二极管结构。

公开(公告)号：US08350262B2

公开(公告)日：2013-01-08

申请号：US12929121

申请日：2011-01-03

Applicant: Myoung-Jae Lee ,  In-Kyeong Yoo ,  Eun-Hong Lee ,  Jong-Wan Kim ,  Dong-Chul Kim ,  Seung-Eon Ahn

Inventor： Myoung-Jae Lee ,  In-Kyeong Yoo ,  Eun-Hong Lee ,  Jong-Wan Kim ,  Dong-Chul Kim ,  Seung-Eon Ahn

IPC: H01L29/10 ,  H01L29/12

CPC classification number: H01L27/1021 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/73

Abstract: A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.

Abstract translation: 可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。 非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。

公开(公告)号：US07936044B2

公开(公告)日：2011-05-03

申请号：US11403902

申请日：2006-04-14

Applicant: Dong Chul Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

Inventor： Dong Chul Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

IPC: H01L29/00

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

Abstract: A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

Abstract translation: 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。

公开(公告)号：US20110085368A1

公开(公告)日：2011-04-14

申请号：US12659516

申请日：2010-03-11

Applicant: Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

Inventor： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

IPC: G11C5/06 ,  G11C11/00 ,  H01L21/82

CPC classification number: H01L27/222 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/79 ,  H01L27/24

Abstract: The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

Abstract translation: 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。

公开(公告)号：US20110059576A1

公开(公告)日：2011-03-10

申请号：US12926042

申请日：2010-10-22

Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC: H01L21/02

CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

Abstract translation: 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

公开(公告)号：US20110001746A1

公开(公告)日：2011-01-06

申请号：US12659156

申请日：2010-02-26

Applicant: Chang-jung Kim ,  In-Kyeong Yoo ,  Young-soo Park ,  Chan-hee Lee

Inventor： Chang-jung Kim ,  In-Kyeong Yoo ,  Young-soo Park ,  Chan-hee Lee

IPC: G09G3/00 ,  G06F3/038

CPC classification number: G09G3/001 ,  G02B27/2264 ,  G09G3/003 ,  G09G3/3225 ,  G09G3/3611 ,  G09G2300/023 ,  G09G2310/0213 ,  G09G2340/10 ,  H04N13/395

Abstract: An apparatus for displaying a three-dimensional (3D) image may include a plurality of display panels and a controller configured to apply image signals to each of the plurality of display panels. At least one of the display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. A method of displaying a three-dimensional (3D) image may include displaying plane images on each of a plurality of display panels. At least one of the plurality of display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction.

Abstract translation: 用于显示三维（3D）图像的装置可以包括多个显示面板和被配置为将图像信号应用于多个显示面板中的每一个的控制器。 至少一个显示面板可以包括透明显示面板。 多个显示面板可以在深度方向上彼此间隔开。 显示三维（3D）图像的方法可以包括在多个显示面板的每一个上显示平面图像。 多个显示面板中的至少一个可以包括透明显示面板。 多个显示面板可以在深度方向上彼此间隔开。

公开(公告)号：US07859035B2

公开(公告)日：2010-12-28

申请号：US11606889

申请日：2006-12-01

Applicant: Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

Inventor： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

IPC: H01L27/108 ,  H01L29/94

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract translation: 提供一种具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括连接到开关元件的开关元件和存储节点。 存储节点可以包括依次层叠的第一金属层，第一绝缘层和第二金属层，以及纳米结构层。 存储节点还可以包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。

公开(公告)号：US07417271B2

公开(公告)日：2008-08-26

申请号：US11655193

申请日：2007-01-19

Applicant: Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

Inventor： Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

IPC: H01L31/062

CPC classification number: H01L27/115 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

Abstract translation: 提供具有至少两个氧化物层的电极结构，其更可靠地在不使用附加装置的情况下切换和操作，以及具有该氧化物层的非易失性存储装置。 电极结构可以包括下电极，形成在下电极上的第一氧化物层，形成在第一氧化物层上的第二氧化物层和形成在第二氧化物层上的上电极，其中第一氧化物层和第二氧化物层中的至少一个 可以由电阻变化材料形成。 第一氧化物层可以由具有可变氧化态的氧化物形成。

公开(公告)号：US20070278425A1

公开(公告)日：2007-12-06

申请号：US11882927

申请日：2007-08-07

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC: G21K5/04

CPC classification number: H01J37/073 ,  H01J2237/31779

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract translation: 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US20070267675A1

公开(公告)日：2007-11-22

申请号：US11798703

申请日：2007-05-16

Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC: H01L29/94 ,  H01L21/8242

CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

Abstract translation: 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。