Abstract:
Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
Abstract:
Certain embodiments relate to compositions that may be used as thermal interface materials in electronic assemblies. One such composition includes a block copolymer matrix comprising polystyrene and polybutene. The composition also includes a filler positioned in the copolymer matrix, the filler comprising carbon. The filler may in certain embodiments be a material selected from the group consisting of graphite, graphene, and carbon nanotubes. composition may include routing structures and their formation. Assemblies may include the composition positioned between a die and a heat spreader. Other embodiments are described and claimed.
Abstract:
An embodiment of the present invention is a technique to provide a dielectric film material with a controllable coefficient of thermal expansion (CTE). A first compound containing a first liquid crystalline component is formed. The first compound is cast into a first film. The first film is oriented in an magnetic or electromagnetic field in a first direction. The first film is cured at a first temperature.
Abstract:
An embodiment of the present invention is a technique to functionalize carbon nanotubes in situ. A carbon nanotube (NT) array is grown or deposited on a substrate. The NT array is functionalized in situ with a polymer by partial thermal degradation of the polymer to form a NT structure. The functionalization of the NT structure is characterized. The functionalized NT structure is processed according to the characterized functionalization.
Abstract:
Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
Abstract:
An embodiment of the present invention is a technique to functionalize carbon nanotubes in situ. A carbon nanotube (NT) array is grown or deposited on a substrate. The NT array is functionalized in situ with a polymer by partial thermal degradation of the polymer to form a NT structure. The functionalization of the NT structure is characterized. The functionalized NT structure is processed according to the characterized functionalization.
Abstract:
Apparatus and methods for providing self-contained, closed-loop microchannel cooling systems that can be integrated into a micro-component package, such as a microelectronic package, are described herein.
Abstract:
A composition including an amount of at least one vinyl terminated polymer; an amount of at least one cross-linker comprising a terminal Si—H unit; an amount of at least one thermally conductive first filler, and at least one thermally conductive second filler, wherein a melting point of the first filler is greater than the melting point of the second filler. An apparatus including a package configured to mate with a printed circuit board; a semiconductor device coupled to the package; a thermal element; and a curable thermal material disposed between the thermal element and the semiconductor device.
Abstract:
An electronic package includes a heat-generating electronic component such as an integrated circuit chip, a thermally conductive member, which may be an integrated heat spreader, and a low modulus thermal interface material in heat conducting relation between the electronic component and the thermally conductive member. Increased thermal performance requirements at the electronic component level are met by the thermal interface material, which includes a polymer matrix and thermally conductive filler, which has a storage shear modulus (G′) at 125° C. of less than about 100 kPa, and which has a gel point, as indicated by a value of G′/G″ of ≧1, where G″ is the loss shear modulus of the thermal interface material. The values for G′ and G″ are measured by a strain-controlled rheometer.